PART |
Description |
Maker |
UPD45128163G5-A75-9JF UPD45128841G5-A10B-9JF UPD45 |
128M-bit Synchronous DRAM 4-bank/ LVTTL OSCILLATORS 100PPM -20 70 3.3V 4 18.432MHZ PD HCMOS 5X7MM 4PAD SMD 128兆位同步DRAM 4银行,LVTTL 128M-bit Synchronous DRAM 4-bank, LVTTL 128兆位同步DRAM 4银行,LVTTL
|
NEC Corp. NEC, Corp.
|
K4S510632C K4S510632C-TC7C |
128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
PD45128163G5-A75SU-9JF PD45128163G5-A80SU-9JF PD45 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
|
ELPIDA[Elpida Memory]
|
HM5212165F HM5212805FLTD-B60 |
128M LVTTL interface SDRAM(128M LVTTL 接口同步DRAM) 128MLVTTL接口的SDRAM28MLVTTL接口同步的DRAM SYNCHRONOUS DRAM, PDSO54
|
Fairchild Semiconductor, Corp.
|
MC-4R256CEE6C-845 MC-4R256CEE6B MC-4R256CEE6B-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT 128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184
|
http:// NEC[NEC] NEC Corp.
|
M2V28S40TP-7L M2V28S30TP-7L M2V28S30TP-8L M2V28S40 |
128M Synchronous DRAM 128M的同步DRAM
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
M377S2950MT3 M377S2950MT3-C1H |
128M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
EBS11RC4ACNA-7A EBS11RC4ACNA EBS11RC4ACNA-75 |
1 GB Registered SDRAM DIMM 128M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
http:// ELPIDA[Elpida Memory] Elpida Memory, Inc. DRAM
|
HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 |
DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin 128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Hitachi Semiconductor
|
HY57V161610ET-7I HY57V161610ET-10I HY57V161610ET-1 |
SDRAM - 16Mb 2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|