PART |
Description |
Maker |
AM29845AJC AM29845A/BLA AM29845ADMB AM29845APC AM2 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30K with Standard Packaging 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50K with Standard Packaging 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC40U with Standard Packaging 600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PC40K with Lead Free Packaging 1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package; A IRGPS40B120U with Standard Packaging 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50U with Standard Packaging 1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package; A IRG4PSH71U with Standard Packaging 1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package; A IRG4BH20K-S with Standard Packaging 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50F with Standard Packaging 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50U with Standard Packaging 10-Bit D-Type Latch 600V Warp 60-150 kHz Discrete IGBT in a TO-262 package; A IRG4BC40WL with Standard Packaging 8位D型锁存器 8-Bit D-Type Latch 8位D型锁存器
|
Bourns, Inc.
|
GA150TD120U |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
|
International Rectifier
|
IRGP8B120KD-E |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
|
International Rectifier
|
IRG4PH40UD-E |
Leaded 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
|
International Rectifier
|
IRG4PH50UD IRG4PH50 |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
|
IRF[International Rectifier]
|
IRG4BH20K-L |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-262 package INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
IRG4PH30 IRG4PH30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 3.10V,@和VGE \u003d 15V的,集成电路\u003d 10A条) 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
|
IRGPS60B120KD 2023 |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-274AA package From old datasheet system INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
IRGS30B60 IRGSL30B60K IRGS30B60K IRGB30B60K |
600V UltraFast 10-30 kHz IGBT in a TO-262 package 600V UltraFast 10-30 kHz IGBT in a D2-Pak package 600V UltraFast 10-30 kHz IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
RURU150120 FN4146 |
150A/ 1200V Ultrafast Diode 150A, 1200V Ultrafast Diode 150A 1200V Ultrafast Diode From old datasheet system
|
INTERSIL[Intersil Corporation]
|
RURD4120S RURD4120 FN3641 |
4A/ 1200V Ultrafast Diodes 4A, 1200V Ultrafast Diodes From old datasheet system
|
Intersil Corporation
|