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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
HGTP1N120BN HGTD1N120BNS HGTD1N120BNS9A
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OCR Text |
...CE = 960V VGE = 15V RG = 82 L = 4mH Test Circuit (Figure 18) TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 1.0A VCE = 960V VGE = 15V RG = 82 L = 4mH Test Circuit (Figure 18) MIN TYP 15 11 67 226 70 172 90 13 11 75 258 145 385 120 MAX 20... |
Description |
5.3A, 1200V, NPT Series N-Channel IGBT 5.3A, 1200V, NPT Series N-Channel IGBT 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
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File Size |
96.06K /
8 Page |
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it Online |
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International Rectifier, Corp.
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Part No. |
IRGB6B60KPBF
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OCR Text |
... ge = 15v,r g = 100 ?, l =1.4mh e tot total switching loss ??? 245 455 ls = 150nh t j = 25c t d(on) turn-on delay time ??? 25 34 i c = 5.0a, v cc = 400v t r rise time ??? 17 26 v ge = 15v, r g = 100 ? l =1.4mh t d(off) tur... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR 绝缘栅双极晶体管
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File Size |
291.06K /
14 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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Part No. |
HGTD1N120CNS FN4652 HGTP1N120CN
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OCR Text |
...0.8 BVCES VGE = 15V RG = 82 L = 4mH Test Circuit (Figure 18) TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 1.0A VCE = 0.8 BVCES VGE = 15V RG = 82 L = 4mH Test Circuit (Figure 18) MIN TYP 15 11 65 365 78 175 140 13 11 75 465 83 385 200 M... |
Description |
From old datasheet system 6.2A 1200V NPT Series N-Channel IGBT 6.2A, 1200V, NPT Series N-Channel IGBT
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File Size |
76.20K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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Part No. |
HGT1S1N120 FN4651 HGT1S1N120CNDS HGTP1N120CND
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OCR Text |
... BVCES, VGE = 15V, RG = 82, L = 4mH, Test Circuit (Figure 20)
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HGTP1N120CND, HGT1S1N120CNDS
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Ener... |
Description |
6.2A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 6.2A 1200V NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode From old datasheet system 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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File Size |
79.21K /
7 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRGIB6B60KD
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OCR Text |
...400V VGE = 15V, RG = 100, L = 1.4mh Ls= 150nH, TJ = 25C IC = 5.0A, VCC = 400V VGE = 15V, RG = 100, L = 1.4mh Ls= 150nH, TJ = 25C
Ref.Fig.
23 CT1
CT4
J
d
ns
CT4
J
ns
IC = 5.0A, VCC = 400V VGE = 15V, RG = 100, L ... |
Description |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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File Size |
270.40K /
12 Page |
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it Online |
Download Datasheet |
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Price and Availability
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