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For w nut Found Datasheets File :: 3280    Search Time::2.594ms    
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    MBRF2045CT MBRF2045CT_D ON0450

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MBRF2045CT MBRF2045CT_D ON0450
OCR Text ...Rev 1 RJC TL 4.0 260 C/w C (c)RectifierInc. 1996 Data Motorola, Device 1 MBRF2045CT ELECTRICAL CHARACTERISTICS, PER LEG ...nut HEATSINK 8a. Screw-Mounted Figure 8. Typical Mounting Techniques 8b. Clip-Mounted Labor...
Description SwITCHMODESchottky Power Rectifirer
SwITCHMODE Schottky Power Rectifirer
20 AMPERES 45 VOLTS
From old datasheet system
SwITCHMODE⑩ Schottky Power Rectifirer

File Size 88.70K  /  4 Page

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    SML20J122

Seme LAB
Part No. SML20J122
OCR Text ... (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) w = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) 4 .8 (0 .1 8 7 ) H= 4 .9 (0 .1 9 3 ) (4 places) 1 2 .6 (0 .4 9 6 ) 1 2...nut M 4 (4 places) 1 R 2 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 ) 0 .7 5 (0 .0 3 0 ) 0 .8 5 (0...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POwER MOSFETS

File Size 22.91K  /  2 Page

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    SML20J175

Seme LAB
Part No. SML20J175
OCR Text ... (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) w = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) 4 .8 (0 .1 8 7 ) H= 4 .9 (0 .1 9 3 ) (4 places) 1 2 .6 (0 .4 9 6 ) 1 2...nut M 4 (4 places) 1 R 2 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 ) 0 .7 5 (0 .0 3 0 ) 0 .8 5 (0...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POwER MOSFETS

File Size 22.91K  /  2 Page

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    SML20J97

Seme LAB
Part No. SML20J97
OCR Text ... (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) w = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) 4 .8 (0 .1 8 7 ) H= 4 .9 (0 .1 9 3 ) (4 places) 1 2 .6 (0 .4 9 6 ) 1 2...nut M 4 (4 places) 1 R 2 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 ) 0 .7 5 (0 .0 3 0 ) 0 .8 5 (0...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POwER MOSFETS

File Size 22.92K  /  2 Page

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    PZ2024B20U

Philips Semiconductors
Part No. PZ2024B20U
OCR Text ...1 2 to 2.4 VCC (V) 28 28 28 PL (w) 27 25 20 wARNING Product and environmental safety - toxic materials This product contains beryllium oxide...nut: max 0.5 Nm. Recommended screw: M3 Fig.18 SOT443A. 1997 Feb 19 11 Philips Semiconduc...
Description NPN microwave power transistors

File Size 130.07K  /  16 Page

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    22RIA40M 22RIA40MS90 22RIA140S9 22RIA40S90 22RIA40 22RIA120M 22RIA160M 22RIA80MS90 22RIA80S90 22RIA 22RIA10 22RIA100 22R

IRF[International Rectifier]
International Rectifier, Corp.
Part No. 22RIA40M 22RIA40MS90 22RIA140S9 22RIA40S90 22RIA40 22RIA120M 22RIA160M 22RIA80MS90 22RIA80S90 22RIA 22RIA10 22RIA100 22RIA100M 22RIA100MS90 22RIA100S90 22RIA10M 22RIA10MS90 22RIA10S90 22RIA120 22RIA120MS90 22RIA120S90 22RIA140 22RIA140M 22RIA140MS90 22RIA140S90 22RIA160 22RIA160MS90 22RIA160S90 22RIA20 22RIA20M 22RIA20MS90 22RIA20S90 22RIA60 22RIA60M 22RIA60MS90 22RIA60S90 22RIA80 22RIA80M
OCR Text ...2.0 1.5 10 Units Conditions w A V TJ = TJ max. TJ = TJ max. TJ = TJ max. www.irf.com 3 22RIA Series Bulletin I2403 rev. A 07/0...nut 0.35 K/w Mounting surface, smooth, flat and greased to device 25 0.29 2.8 lbf-in kgf...
Description 800V 22A Phase Control SCR in a TO-208AA (TO-48) package
1600V 35A Phase Control SCR in a TO-208AA (TO-48) package
1400V 35A Phase Control SCR in a TO-208AA (TO-48) package
1200V 22A Phase Control SCR in a TO-208AA (TO-48) package
1000V 22A Phase Control SCR in a TO-208AA (TO-48) package
100V 22A Phase Control SCR in a TO-208AA (TO-48) package
600V 22A Phase Control SCR in a TO-208AA (TO-48) package
MEDIUMPOwERTHYRISTORS
400V 22A Phase Control SCR in a TO-208AA (TO-48) package
Circular Connector; MIL SPEC:MIL-C-5015 A/B/C; Body Material:Aluminum Alloy; Series:97-3106; No. of Contacts:4; Connector Shell Size:14S; Connecting Termination:Solder; Circular Shell Style:Straight Plug RoHS Compliant: Yes
MEDIUM POwER THYRISTORS 中功率晶闸管

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    APT5010JFLL

ADPOW[Advanced Power Technology]
Part No. APT5010JFLL
OCR Text ...Repetitive) 1 4 Volts watts w/C C Amps mJ 1800 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Ch...nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.49K  /  2 Page

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    APT5010JLC

Advanced Power Technology Ltd.
Part No. APT5010JLC
OCR Text w S G D S POwER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. ...nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0...
Description POwER MOS VI 500V 44A 0.100 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

File Size 34.93K  /  2 Page

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    APT5010JLL

ADPOW[Advanced Power Technology]
Part No. APT5010JLL
OCR Text w S G D S POwER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both con...nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.35K  /  2 Page

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    APT5010JN APT5012JN APT5012

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT5010JN APT5012JN APT5012
OCR Text ... Current Clamped Volts watts w/C C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions ...nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0...
Description POwER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POwER MOSFETS N沟道增强型高压功率MOSFET

File Size 60.42K  /  4 Page

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