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  trench Datasheet PDF File

For trench Found Datasheets File :: 10552    Search Time::3.797ms    
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    MagnaChip Semiconductor...
Part No. MDU10N180
OCR Text ...0n180rh C single n - channel trench mosfet 100 v absolute maximum ratings (t j = 25 o c) characteristics symbol rating unit drain - source voltage...
Description Single N-channel trench MOSFET 100V, 40A, 18m(ohm)

File Size 926.10K  /  6 Page

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    NXP Semiconductors N.V.
Part No. NX3008PBKV NX3008PBKV-15
OCR Text ...ce (smd ) plastic package using trench mosfet technology. 1.2 features and benefits ? very fast switching ? low threshold voltage ? trench mosfet technology ? esd protection up to 2 kv ? aec-q101 qualified 1.3 applications ? relay driver ...
Description 30 V, 220 mA dual P-channel trench MOSFET 220 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 843.51K  /  17 Page

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    MagnaChip Semiconductor...
Part No. MDP10N055
OCR Text ...0n055 th C single n - channel trench mosfet 10 0v absolute maximum ratings (t j = 25 o c ) characteristics symbol rating unit drain - source vo...
Description Single N-channel trench MOSFET 100V, 120A, 5.5m(ohm)

File Size 1,026.53K  /  6 Page

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    MagnaChip Semiconductor...
Part No. MDP10N027 MDP10N027TH
OCR Text ...n027th C single n - channel trench mosfet 10 0v absolute maximum ratings (t j = 25 o c ) characteristics symbol rating unit drain - source voltag...
Description Single N-channel trench MOSFET 100V, 120A, 2.8m(ohm)

File Size 880.73K  /  6 Page

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    IRG7I313UPBF

International Rectifier
Part No. IRG7I313UPBF
OCR Text trench IGBT Features l Advanced trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current cap...
Description PDP trench IGBT

File Size 201.44K  /  7 Page

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    ADG5404 ADG5404BCPZ-REEL7 ADG5404BRUZ ADG5404BRUZ-REEL7

Analog Devices
Part No. ADG5404 ADG5404BCPZ-REEL7 ADG5404BRUZ ADG5404BRUZ-REEL7
OCR Text ...s. The ADG5404 is designed on a trench process, which guards against latch-up. A dielectric trench separates the P and N channel transistors, thereby preventing latch-up even under severe overvoltage conditions. The ADG5404 switches one of ...
Description High Voltage, Latch-up Proof, 4-Channel Multiplexer

File Size 318.20K  /  20 Page

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    NXP Semiconductors N.V.
Part No. NX3008PBK NX3008PBK215 NX3008PBK-15
OCR Text ...ice (smd) plastic package using trench mosfet technology. 1.2 features and benefits ? very fast switching ? low threshold voltage ? trench mosfet technology ? esd protection up to 2 kv ? aec-q101 qualified 1.3 applications ? relay driver ...
Description 30 V, 230 mA P-channel trench MOSFET SMALL SIGNAL, FET

File Size 852.81K  /  16 Page

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    FGA15N120ANTD FGA15N120ANTD07 FGA15N120ANTDF109 FGA15N120ANTDTU FGA15N120ANTDTUF109

Fairchild Semiconductor
List of Unclassifed Manufacturers
Part No. FGA15N120ANTD FGA15N120ANTD07 FGA15N120ANTDF109 FGA15N120ANTDTU FGA15N120ANTDTUF109
OCR Text trench IGBT May 2006 FGA15N120ANTD / FGA15N120ANTD_F109 1200V NPT trench IGBT Features * NPT trench Technology, Positive temperature coefficient * Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 15A and TC = 25C * Low switching...
Description 1200V NPT trench IGBT
NPT trench Technology, Positive temperature coefficient
Extremely enhanced avalanche capability

File Size 832.67K  /  10 Page

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    ADG5412 ADG5412BCPZ-REEL7 ADG5412BRUZ ADG5412BRUZ-REEL7 ADG5413 ADG5413BCPZ-REEL7

Analog Devices
Part No. ADG5412 ADG5412BCPZ-REEL7 ADG5412BRUZ ADG5412BRUZ-REEL7 ADG5413 ADG5413BCPZ-REEL7
OCR Text ...ions. PRODUCT HIGHLIGHTS 1. trench isolation guards against latch-up. A dielectric trench separates the P and N channel transistors thereby preventing latch-up even under severe overvoltage conditions. Low RON. Dual-supply operation. Fo...
Description High Voltage Latch-Up Proof, Quad SPST Switches

File Size 285.53K  /  20 Page

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    IRGI4086PBF

International Rectifier
Part No. IRGI4086PBF
OCR Text trench IGBT Features Advanced trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capab...
Description PDP trench IGBT

File Size 302.02K  /  7 Page

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