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For transfer Found Datasheets File :: 97011    Search Time::1.984ms    
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    FT245R FT245RL-2000 FT245RQ-6000 FT245R10

Future Technology Devices International Ltd.
Part No. FT245R FT245RL-2000 FT245RQ-6000 FT245R10
OCR Text ...arallel FIFO bidirectional data transfer interface. Entire USB protocol handled on the chip. No USB specific firmware programming required. Fully integrated 1024 bit EEPROM storing device descriptors and FIFO I/O configuration. Fully integr...
Description USB FIFO IC - Single chip USB to parallel FIFO bidirectional data transfer interface

File Size 621.96K  /  37 Page

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    2SA743 2SA743A

HITACHI[Hitachi Semiconductor]
Part No. 2SA743 2SA743A
OCR Text ... 2SA743, 2SA743A DC Currnet transfer Ratio vs. Collector Current 180 TC = 75C DC current transfer ratio hFE VCE = -4 V Pulse TC = 75C 25 -25 Typical transfer Characteristics -1.0 -0.5 Collector current IC (A) -0.2 -0.1 -0.05 -0.02 -...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 30.46K  /  6 Page

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    HT2DC20S20

NXP Semiconductors
Part No. HT2DC20S20
OCR Text ... ftrans resonant frequency data transfer rate transponder to reader reader to transponder M memory size organization N encrypted mutual authentication bits serial number secret key taut authentication time - - - 32 48 36 - - 256 8 - - 4.0 5...
Description HITAG 2 stick transponder

File Size 66.50K  /  16 Page

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    2SA778 2SA778A 2SA778AK 2SA778K 2SA778_K 2SA778A_K

HITACHI[Hitachi Semiconductor]
Part No. 2SA778 2SA778A 2SA778AK 2SA778K 2SA778_K 2SA778A_K
OCR Text ...-- -- -- -- -- -- DC current transfer ratio hFE Collector to emitter saturation voltage Base to emitter saturation voltage Collector output capacitance VCE(sat) VBE(sat) Cob -0.77 -1.0 -- 50 135 1.7 -- 10 -- -- -- 1.0 -0.77 -1.0 --...
Description Silicon PNP Epitaxial

File Size 41.66K  /  8 Page

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    DMS3019SSD-13 DMS3019SSD

Diodes Incorporated
Part No. DMS3019SSD-13 DMS3019SSD
OCR Text ...in-Source On-Resistance Forward transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (V...
Description ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 193.96K  /  10 Page

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    2SA836

HITACHI[Hitachi Semiconductor]
Part No. 2SA836
OCR Text ...itter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figuer V(BR)EBO I CBO I EBO hFE* 160 -- -- -- -- -- -- VCE(sat) V...
Description Silicon PNP Epitaxial

File Size 31.87K  /  6 Page

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    2SA838

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SA838
OCR Text ... cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance (Ta=25C) Symbol ICBO...
Description Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)

File Size 36.38K  /  2 Page

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    MTB2D5N03BH8-0-T6-G

Cystech Electonics Corp.
Cystech Electonics Corp...
Part No. MTB2D5N03BH8-0-T6-G
OCR Text ... i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 10...
Description N-Channel Logic Level Enhancement Mode Power MOSFET

File Size 408.68K  /  9 Page

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    2SA872 2SA872A

HITACHI[Hitachi Semiconductor]
Part No. 2SA872 2SA872A
OCR Text ...tter Voltage VCE (V) Typical transfer Characteristics -10 Collector Current IC (mA) -3 VCE = -12 V -1.0 -0.3 Ta =100C 75 50 25 0 -25 -0.1 -0.03 -0.01 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 Base to Emitter Voltage VBE (V) DC Current transfer ...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 36.33K  /  7 Page

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    DMS3017SSD-13 DMS3017SSD

Diodes Incorporated
Part No. DMS3017SSD-13 DMS3017SSD
OCR Text ...in-Source On-Resistance Forward transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (V...
Description ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 196.81K  /  10 Page

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