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For transfer Found Datasheets File :: 96154 Search Time::2.063ms
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				TOSHIBA
Part No.	TPCP8008-H
OCR Text	... gs = 4.5 v) ? high forward transfer admittance: \|y fs \| = 26 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 30 v) ? enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.1 ma) absolute maximum ratings ...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	203.82K / 7 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SA2057
OCR Text	...sat) * Superior forward current transfer ratio hFE linearity * TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 15.00.5 9.90.3 4.60.2 2.90.2 3.20.1 13.70.2 4.20.2 Solder Dip 1.40.2 1.60.2 0.80.1 ...
Description	Silicon PNP epitaxial planar type
File Size	72.39K / 3 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCA8A04-H
OCR Text	....3 m (typ.) ? high forward transfer admittance: \|y fs \| = 127 s (typ.) ? low leakage current: i dss = 100 a (max) (v ds = 30 v) ? enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings ...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	216.05K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCA8A02-H
OCR Text	....8 m (typ.) ? high forward transfer admittance: \|y fs \| = 90 s (typ.) ? low leakage current: i dss = 100 a (max) (v ds = 30 v) ? enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings ...
Description	High Efficiency DC-DC Converter Applications Notebook PC Applications
File Size	211.67K / 8 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCA8039-H
OCR Text	...3.8 m (typ.) ? high forward transfer admittance: \|y fs \| = 99 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 30 v) ? enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.5 ma) absolute maximum ratings (...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	194.17K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPCA8030-H
OCR Text	...7.3 m (typ.) ? high forward transfer admittance: \|y fs \| = 60 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 30 v) ? enhancement mode: v th = 1.5 to 2.5 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta...
Description	TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H)
File Size	150.17K / 7 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SA673 2SA673A
OCR Text	... Voltage VCE (V) -30 Typical transfer Characteristics VCE = -3 V -400 -10 -300 -200 -1.0 PC = 400 mW -0.3 0 -0.2 -0.4 -0.6 -0.8 -1.0 Base to Emitter Voltage VBE (V) 25 -25 -3 Ta = 75C 3 2SA673, 2SA673A ...
Description	Silicon PNP Epitaxial(小信号晶体管)
File Size	30.13K / 6 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPC8047-H
OCR Text	...5.1 m (typ.) ? high forward transfer admittance: \|y fs \| = 62 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 40 v) ? enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.5 ma) absolute maximum rati...
Description	Power MOSFET (N-ch single 30V<VDSS≤60V)
File Size	203.80K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SA715
OCR Text	...ector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE* hFE Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Note: B 60 to 120 VBE VCE(sat) fT 60 20 -- -- -- V V MHz VCE = -2 V, IC =...
Description	Silicon PNP Transistor Silicon PNP Epitaxial
File Size	28.86K / 5 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TK25A10K3
OCR Text	... 31 m (typ.) ? high forward transfer admittance: \|y fs \| = 50 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 100 v) ? enhancement-model: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings ...
Description	Power MOSFET (N-ch single 60V<VDSS≤150V)
File Size	301.95K / 6 Page	View it Online	Download Datasheet

For transfer Found Datasheets File :: 96154 Search Time::2.063ms
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