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rg-195 u Datasheet PDF File

For rg-195 u Found Datasheets File :: 629 Search Time::1.344ms
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				NEC[NEC]
Part No.	2SJ448
OCR Text	...rain ** Starting Tch = 25 C, RG = 25 , VGS = -20 V 0 Gate Body Diode Gate Protection Diode Source Document No. D10029EJ1V0DS...195 760 -4.0 1.0 MIN. TYP. 1.5 -4.8 2.3 -100 m10 MAX. 2.0 -5.5 uNIT V S TEST CONDITIONS V...
Description	SWITCHING P-CHANNEL POWER MOS FET INDuSTRIAL uSE
File Size	117.41K / 8 Page	View it Online	Download Datasheet

				http:// FAIRCHILD[Fairchild Semiconductor] INTERSIL[Intersil Corporation] Fairchild Semiconductor Corporation
Part No.	HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text	...ure. 2. VCE = 360V, TC = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES IC = IC110, VGE = 15V IC ...
Description	40A/ 600V/ uFS Series N-Channel IGBTs 40A, 600V, uFS Series N-Channel IGBTs From old datasheet system XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN 40 A, 600 V, N-CHANNEL IGBT
File Size	137.79K / 6 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT1S20N60C3R HGT1S20N60C3RS HGTG20N60C3R HGTP20N60C3R
OCR Text	... VCE = VGE VGE = 20V TJ = 150oC RG = 10 VGE = 15V IC = IC110, VCE = 0.5 BVES VCE(PK) = 600V L = 1mH TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC MIN 600 15 3.5 80 TYP 1.8 2.1 6.3 MAX 250 3.0 2.2 2.5 7.5 100 uNITS V V A mA V V V nA A ...
Description	40A/ 600V/ Rugged uFS Series N-Channel IGBTs 40A, 600V, Rugged uFS Series N-Channel IGBTs
File Size	107.60K / 6 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
Part No.	HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A
OCR Text	... 2. VCE(PK) = 360V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES...
Description	45 A, 600 V, uFS N-Channel IGBT Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB 45A, 600V, uFS Series N-Channel IGBT 5A00V的，的ufs系列N沟道IGBT
File Size	141.01K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4
OCR Text	...E = 20A, VCE = 390V, VGE = 15V, RG = 3, L = 500H, Test Circuit Figure 24 TYP 1.8 1.6 5.5 8.6 142 182 15 12 73 32 105 280 150 15 13 105 55 115 510 330 MAX 250 3.0 2.7 2.0 7.0 250 162 210 350 200 21 18 135 73 600 500 uNITS V A mA V V V nA A V...
Description	CONNECTOR ACCESSORY 70 A, 600 V, N-CHANNEL IGBT, TO-268AA 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	162.96K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG20N60A4 HGTP20N60A4
OCR Text	...CE = 600V VGE = 20V TJ = 150oC, RG = 3, VGE = 15V L = 100H, VCE = 600V IC = 20A, VCE = 300V IC = 20A, VCE = 300V VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energ...
Description	600V, SMPS Series N-Channel IGBTs
File Size	137.64K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	HGTG20N60B3D G20N60B3 G20N60B3D
OCR Text	...ure. 2. VCE = 360V, TC = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES SSOA TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES IC = IC110 , VGE = 15V VG...
Description	40A / 600V / uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 40A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 3.3V 36-mc CPLD
File Size	176.68K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG20N60C3D
OCR Text	... 2. VCE(PK) = 360V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 3....
Description	3.3V 36-mc CPLD 45A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	120.19K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF740B IRFS740B IRF740
OCR Text	..., 5) VDD = 200 V, ID = 10 A, RG = 25 (Note 4, 5) -------- 20 80 125 85 41 7 17 50 170 260 180 53 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drai...
Description	400V N-Channel MOSFET
File Size	892.13K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQP9N50C FQPF9N50C FQPF9N50CT
OCR Text	...4, 5) VDD = 250 V, ID = 9 A, RG = 25 (Note 4, 5) -------- 18 65 93 64 28 4 15 45 140 195 125 35 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain...
Description	500V N-Channel MOSFET 500V N-Channel Advance Q-FET C-Series
File Size	842.91K / 10 Page	View it Online	Download Datasheet

For rg-195 u Found Datasheets File :: 629 Search Time::1.344ms
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