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  RF610 Datasheet PDF File

For RF610 Found Datasheets File :: 33+       Page :: | <1> | 2 | 3 | 4 |   

    RF Micro Devices, Inc.
RFMD[RF Micro Devices]
Part No. RF6100-2
Description RF Micro Devices 3V 900 MHz Linear Amplifier 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER

File Size 483.61K  /  2 Page

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HUA FENG CIRCUIT





    Bipolarics
Part No. BRF610
Description NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

File Size 52.91K  /  4 Page

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    IRF610

Fairchild Semiconductor
Part No. IRF610
Description 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET

File Size 91.05K  /  7 Page

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    Inchange Semiconductor ...
Part No. IRF610
Description isc N-Channel MOSFET Transistor

File Size 39.57K  /  2 Page

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    Inchange Semiconductor ...
Part No. IRF610A
Description isc N-Channel MOSFET Transistor

File Size 62.90K  /  2 Page

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    IRF6100

International Rectifier
Part No. IRF6100
Description HEXFET? Power MOSFET

File Size 219.84K  /  8 Page

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    IRF610S

Vishay Siliconix
Part No. IRF610S
Description    Surface mount

File Size 179.96K  /  8 Page

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    Fairchild Semiconductor, Corp.
Part No. IRF610A
Description    Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为200V,导通电阻为1.5Ω,漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 249.06K  /  7 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF6100
Description HEXFET Power MOSFET HEXFET功率MOSFET

File Size 231.24K  /  8 Page

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    Fairchild Semiconductor, Corp.
Part No. IRF610A
Description TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 3.3A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直| 3.3AI(四)| TO - 220AB现有

File Size 389.19K  /  9 Page

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For RF610 Found Datasheets File :: 33+       Page :: | <1> | 2 | 3 | 4 |   

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