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  on-resistance Datasheet PDF File

For on-resistance Found Datasheets File :: 222390    Search Time::2.813ms    
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    TOSHIBA
Part No. TK7S10N1Z
OCR Text ...s features (1) low drain-source on-resistance: r ds(on) = 40 m ? (typ.) (v gs = 10 v) (2) low leakage current: i dss = 10 a (max) (v ds = 100 v) (3) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 0.1 ma) 3. 3. 3. 3. ...
Description Power MOSFET (N-ch single 60V<VDSS≤150V)

File Size 239.71K  /  9 Page

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    TOSHIBA
Part No. TK35E08N1
OCR Text ...s features (1) low drain-source on-resistance: r ds(on) = 10.0 m ? (typ.) (v gs = 10 v) (2) low leakage current: i dss = 10 a (max) (v ds = 80 v) (3) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 0.3 ma) 3. 3. 3. 3....
Description Power MOSFET (N-ch single 60V<VDSS≤150V)

File Size 246.05K  /  9 Page

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    TOSHIBA
Part No. TK25A10K3
OCR Text ...ications ? low drain-source on resistance: r ds (on) = 31 m (typ.) ? high forward transfer admittance: |y fs | = 50 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 100 v) ? enhancement-model: v th = 2.0 to 4.0...
Description Power MOSFET (N-ch single 60V<VDSS≤150V)

File Size 301.95K  /  6 Page

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    TOSHIBA
Part No. TK10A60W5
OCR Text ... ns (typ.) (2) low drain-source on-resistance: r ds(on) = 0.35 ? (typ.) by used to super junction structure : dtmos (3) easy to control gate switching (4) enhancement mode: v th = 3 to 4.5 v (v ds = 10 v, i d = 0.5 ma) 3. 3. 3. 3....
Description Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 239.38K  /  10 Page

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    TOSHIBA
Part No. SSM6P35FU
OCR Text ...ons ? 1.2-v drive ? low on-resistance : r on = 44 ? (max) (@v gs = -1.2 v) : r on = 22 ? (max) (@v gs = -1.5 v) : r on = 11 ? (max) (@v gs = -2.5 v) : r on = 8 ? (max) (@v gs = -4.0 v) ...
Description Small-signal MOSFET 2 in 1

File Size 209.04K  /  5 Page

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    TOSHIBA
Part No. SSM6J401TU
OCR Text ...ions ? 4.0v drive ? low on-resistance : r ds(on) = 145m ? (max) (@v gs = ? 4 v) : r ds(on) = 73m ? (max) (@v gs = ? 10 v) absolute maximum ratings (ta = 25 ? c) characteristic symbol rating unit drain?source voltag...
Description Small-signal MOSFET

File Size 212.24K  /  6 Page

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    TOSHIBA
Part No. SSM3K35FS
OCR Text ...ns ? 1.2-v drive ? low on-resistance: r on = 20 ? (max) (@v gs = 1.2 v) : r on = 8 ? (max) (@v gs = 1.5 v) : r on = 4 ? (max) (@v gs = 2.5 v) : r on = 3 ? (max) (@v gs = 4.0 v) absolute maximum ratings ...
Description Small-signal MOSFET

File Size 200.70K  /  5 Page

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    SMK0990CI

KODENSHI KOREA CORP.
Part No. SMK0990CI
OCR Text ...2nc (typ.) ? low drain-source on resistance: r ds(on) =1.4 ? (max.) ? 100% avalanche tested ? rohs compliant device ordering information part number marking package smk0990ci smk0990 to-3p marking information ...
Description SWITCHING REGULATOR APPLICATION

File Size 258.65K  /  8 Page

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    PBSS5360Z

NXP Semiconductors
Part No. PBSS5360Z
OCR Text ...re -65 150 c [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. [2] device mo...resistance from junction to ambient in free air [3] - - 93 k/w r th(j-sp) thermal resistance from ju...
Description 60 V, 3 A PNP low VCEsat (BISS) transistor

File Size 254.73K  /  14 Page

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    NX3020NAK NX3020NAK-15

NXP Semiconductors
Part No. NX3020NAK NX3020NAK-15
OCR Text ...acteristics r dson drain-source on-state resistance v gs = 10 v; i d = 100 ma; pulsed; t p 300 s; 0.02 ; t j = 25 c - 2.7 4.5 [1] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for drain 1 cm 2 . nxp ...
Description 30 V, single N-channel Trench MOSFET

File Size 248.73K  /  15 Page

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For on-resistance Found Datasheets File :: 222390    Search Time::2.813ms    
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