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nitride Datasheet PDF File

For nitride Found Datasheets File :: 2679 Search Time::1.765ms
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				ERICSSON[Ericsson]
Part No.	PTB20156
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Specified 22 Volts Class C Characteristics Output Power: 8 Wa...
Description	8 Watts, 1350-1850 MHz Microwave Power Transistor
File Size	43.47K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20157
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 20 Watts, 1.35-1.85 GHz Class C Characteristics 40% Min Collec...
Description	20 Watts, 1.35.85 GHz RF Power Transistor 20 Watts, 1.35-1.85 GHz RF Power Transistor
File Size	45.05K / 3 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20162
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 40 Watts, 470-900 MHz Class AB Characteristics 50% Min Collect...
Description	40 Watts, 470-900 MHz RF Power Transistor
File Size	41.67K / 2 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20166
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Specified at 28 Volt, 925 MHz Class C Characteristics 55% Min ...
Description	23 Watts, 675-925 MHz Common Base RF Power Transistor
File Size	45.65K / 3 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20167
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 24 Volt, 905 MHz Common Base Characteristics - Output Power = 60 W...
Description	60 Watts, 850-960 MHz RF Power Transistor
File Size	46.77K / 3 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20170
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 30 Watts, 1.8-2.0 GHz Class AB Characteristics Gold Metallizati...
Description	30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor
File Size	260.81K / 5 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20171
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 25 Watts, 935-960 MHz Class AB Characteristics Gold Metallizati...
Description	25 Watts, 935-960 MHz Cellular Radio RF Power Transistor
File Size	43.57K / 2 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20174
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Class AB Characteristics Specified 26 Volts, 1490 MHz - Output Po...
Description	90 Watts, 1400-1600 MHz RF Power Transistor
File Size	563.19K / 4 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20175
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 55 Watts, 1.9-2.0 GHz Class AB Characteristics 40% Collector E...
Description	55 Watts, 1.9-2.0 GHz Cellular Radio RF Power Transistor
File Size	578.97K / 4 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTB20176
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 26 Volt, 1.85 GHz Characteristics Class A/AB Internally Matche...
Description	5 Watts, 1.78-1.92 GHz RF Power Transistor 5瓦，1.78-1.92 GHz射频功率晶体 5 Watts, 1.78?.92 GHz RF Power Transistor
File Size	47.44K / 3 Page	View it Online	Download Datasheet

For nitride Found Datasheets File :: 2679 Search Time::1.765ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |