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nitride Datasheet PDF File

For nitride Found Datasheets File :: 2679 Search Time::1.109ms
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				ERICSSON[Ericsson]
Part No.	PTB20134
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 30 Watts, 860-900 MHz Class AB Characteristics 50% Min Collect...
Description	30 Watts, 860-900 MHz Cellular Radio RF Power Transistor
File Size	42.13K / 2 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20135
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 26 Volt, 960 MHz Characteristics - Output Power = 85 Watts - Colle...
Description	85 Watts, 925-960 MHz Cellular Radio RF Power Transistor
File Size	47.39K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20141
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 18 Watts, 1.465-1.513 GHz Class AB Characteristics 45% Min Col...
Description	18 Watts, 1.465.513 GHz Cellular Radio RF Power Transistor 18 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor
File Size	41.29K / 2 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20144
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 6 Watts, 915-960 MHz Class AB Characteristics 50% Typ Collect...
Description	6 Watts, 91560 MHz Cellular Radio RF Power Transistor 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor 6 Watts/ 915-960 MHz Cellular Radio RF Power Transistor
File Size	41.10K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20145
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 9 Watts, 915-960 MHz Class AB Characteristics 50% Min Colle...
Description	9 Watts, 91560 MHz Cellular Radio RF Power Transistor 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor 9瓦，915-960兆赫蜂窝无线电射频功率晶体管
File Size	41.43K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20146
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 0.4 Watt, 1.8-2.0 GHz Class A Characteristics Tested to sold...
Description	0.4 Watt, 1.8.0 GHz Cellular Radio RF Power Transistor 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor 0.4 Watt/ 1.8-2.0 GHz Cellular Radio RF Power Transistor
File Size	38.87K / 2 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20147
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 2.5 Watts, 1.8-2.0 GHz Class AB Characteristics 35% Collect...
Description	2.5 Watts, 1.8.0 GHz Cellular Radio RF Power Transistor 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor
File Size	384.59K / 2 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20148
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 60 Watts, 925-960 MHz Class AB Characteristics 50% Min Collect...
Description	60 Watts, 92560 MHz Cellular Radio RF Power Transistor 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor 60 Watts/ 925-960 MHz Cellular Radio RF Power Transistor
File Size	46.23K / 3 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20151
OCR Text	...TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 45 Watts, 1.8-2.0 GHz Class AB Characteristics 40% Collector Efficiency at...
Description	45 Watts 1.8-2.0 GHz PCN/PCS Power Transistor 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor
File Size	638.91K / 5 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20155
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 9 Watts, 610-960 MHz Class C Characteristics Gold Metallization...
Description	9 Watts, 610-960 MHz UHF Power Transistor 9瓦，610-960 MHz的超高频功率晶体
File Size	42.57K / 3 Page	View it Online	Download Datasheet

For nitride Found Datasheets File :: 2679 Search Time::1.109ms
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