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  nitride Datasheet PDF File

For nitride Found Datasheets File :: 2623    Search Time::2.688ms    
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    PTB20030

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20030
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 15 Watts, 420-470 MHz Class AB Characteristics 50% Collector E...
Description 15 Watts, 42070 MHz RF Power Transistor
15 Watts, 420-470 MHz RF Power Transistor

File Size 44.12K  /  3 Page

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    PTB20031

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20031
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 40 Watts, 420-470 MHz Class AB Characteristics 50% Collector E...
Description 40 Watts, 42070 MHz RF Power Transistor
40 Watts, 420-470 MHz RF Power Transistor

File Size 44.46K  /  2 Page

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    PTB20038

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20038
OCR Text ...PEP capacity. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 25 Watts, 860-900 MHz Class AB Characteristics Gold Metallizati...
Description 25 Watts, 86000 MHz Cellular Radio RF Power Transistor
25 Watts, 860-900 MHz Cellular Radio RF Power Transistor

File Size 44.53K  /  2 Page

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    PTB20046

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20046
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 1 Watt, 1465-1513 MHz Class AB Characteristics 18% Collector E...
Description 1 Watt, 1465513 MHz Cellular Radio RF Power Transistor
1 Watt, 1465-1513 MHz Cellular Radio RF Power Transistor

File Size 40.16K  /  2 Page

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    PTB20051

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20051
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 6 Watts, 1.465-1.513 GHz Class AB Characteristics 35% Collecto...
Description 6 Watts, 1.465.513 GHz Cellular Radio RF Power Transistor
6 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor

File Size 41.32K  /  2 Page

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    PTB20053

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20053
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 60 Watts, 860-900 MHz Class AB Characteristics 50% Collector E...
Description 60 Watts, 86000 MHz Cellular Radio RF Power Transistor
60 Watts, 860-900 MHz Cellular Radio RF Power Transistor

File Size 45.93K  /  3 Page

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    PTB20074

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20074
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 14 watts, 1.477-1.501 GHz Class AB Characteristics 30% Collect...
Description 14 watts, 1.477.501 GHz Cellular Radio RF Power Transistor
14 watts, 1.477-1.501 GHz Cellular Radio RF Power Transistor

File Size 39.91K  /  2 Page

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    PTB20077

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20077
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. * * * * * * 0.7 Watt, 1525-1660 MHz Class A Characteristics Gold Metallization ...
Description 0.7 Watts, 1525660 MHz INMARSAT RF Power Transistor
0.7 Watts, 1525-1660 MHz INMARSAT RF Power Transistor
0.7 Watts 1525-1660 MHz INMARSAT RF Power Transistor

File Size 170.38K  /  3 Page

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    PTB20078

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20078
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 2.5 Watts, 1525-1660 MHz Class AB Characteristics Gold Metall...
Description 2.5 Watts, 1525660 MHz INMARSAT RF Power Transistor
2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor 2.5瓦,16250年国际海事卫星组织兆赫射频功率晶体管

File Size 192.07K  /  3 Page

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    PTB20079

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20079
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 10 Watts, 1.6-1.7 GHz Class A/AB Characteristics 38% Collector Efficiency ...
Description 10 Watts, 1.6-1.7 GHz INMARSAT RF Power Transistor

File Size 184.11K  /  3 Page

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For nitride Found Datasheets File :: 2623    Search Time::2.688ms    
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