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  nitride Datasheet PDF File

For nitride Found Datasheets File :: 2679    Search Time::1.25ms    
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    Electronic Theatre Controls, Inc.
Allegro MicroSystems, Inc.
Part No. SC10002430 SC00080912 SC02201518 SC99906068 SC00820710
OCR Text ... over which a layer of silicon nitride is deposited. this dielectric possesses a low temperature coefficient of capacitance and very high insulation resistance. the devices also exhibit excellent long term stability making them suitable fo...
Description Snap-in Panel Mount Switch, Single Pole Normally Open (SPNO) Circuitry, 10 A at 277 Vac, Finger Grip Plunger Actuator, Silver Contacts, Quick Connect Termination
MIS Chip Capacitors 管理信息系统贴片电容
Enclosed Switches Series LS: Side Rotary - Lever Not Included; 1NC 1NO SPDT Snap Action, Double Break; 0.5 in - 14NPT conduit; Compact/Non-Plug-in 管理信息系统贴片电容
Enclosed Switches Series LS: Side Rotary with 1.5" Fixed Length Lever; Nylon Roller; 1NC 1NO DPDT Snap Action, Double Break; 0.5 in - 14NPT conduit; Compact/Non Plug-in 管理信息系统贴片电容

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    PTB20003

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20003
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Specified 25 Volts 4 Watts, 915-960 MHz Class AB Characterist...
Description 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor

File Size 53.95K  /  3 Page

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    PTB20004

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20004
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 50 Watts, 860-900 MHz Class AB Characteristics 50% Collector E...
Description 50 Watts, 860-900 MHz Cellular Radio RF Power Transistor
50 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

File Size 46.81K  /  3 Page

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    PTB20005

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20005
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 15 Watts, 860-900 MHz Class AB Characteristics 50% Collector E...
Description 15 Watts 860-900 MHz Cellular Radio RF Power Transistor
15 Watts, 860-900 MHz Cellular Radio RF Power Transistor
15 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

File Size 44.10K  /  3 Page

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    PTB20006

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20006
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 4 Watts, 860-900 MHz Class AB Characteristics 50% Collector Ef...
Description 4 Watts, 86000 MHz Cellular Radio RF Power Transistor
4 Watts, 860-900 MHz Cellular Radio RF Power Transistor
4 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

File Size 44.52K  /  3 Page

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    PTB20007

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20007
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 30 Watts, 935-960 MHz Class AB Characteristics 50% Collector E...
Description 30 Watts, 93560 MHz Cellular Radio RF Power Transistor
30 Watts, 935-960 MHz Cellular Radio RF Power Transistor
30 Watts 935-960 MHz Cellular Radio RF Power Transistor

File Size 47.21K  /  3 Page

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    PTB20008

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20008
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 10 Watts, 935-960 MHz Class AB Characteristics 50% Collector Efficiency at...
Description 10 Watts, 93560 MHz Cellular Radio RF Power Transistor
10 Watts, 935-960 MHz Cellular Radio RF Power Transistor
10 Watts 935-960 MHz Cellular Radio RF Power Transistor

File Size 43.78K  /  3 Page

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    PTB20009

Ericsson Microelectronics
ERICSSON[Ericsson]
TriQuint Semiconductor, Inc.
Part No. PTB20009
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 2.5 Watts, 935-960 MHz Class AB Characteristics 50% Collector ...
Description 2.5 Watts, 93560 MHz Cellular Radio RF Power Transistor
2.5 Watts/ 935-960 MHz Cellular Radio RF Power Transistor
2.5 Watts, 935-960 MHz Cellular Radio RF Power Transistor 2.5瓦,935-960兆赫蜂窝无线电射频功率晶体管

File Size 38.88K  /  2 Page

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    PTB20011

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20011
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 20 Watts (P-Sync), 470-860 MHz Class A Characteristics Gold Metallization S...
Description 20 Watts P-Sync, 47060 MHz UHF TV Linear Power Transistor
20 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor
20 Watts P-Sync 470-860 MHz UHF TV Linear Power Transistor

File Size 46.25K  /  3 Page

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    PTB20017

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTB20017
OCR Text ...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 150 Watts, 860-900 MHz Class AB Characteristics 50% Collector ...
Description 150 Watts, 86000 MHz Cellular Radio RF Power Transistor
150 Watts, 860-900 MHz Cellular Radio RF Power Transistor
150 Watts 860-900 MHz Cellular Radio RF Power Transistor

File Size 44.06K  /  3 Page

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For nitride Found Datasheets File :: 2679    Search Time::1.25ms    
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