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For mos Found Datasheets File :: 26975 Search Time::1.438ms
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				PANASONIC[Panasonic Semiconductor]
Part No.	2SK0655 2SK655
OCR Text	mos FETs (Small Signal) 2SK0655 (2SK655) Silicon N-Channel mos FET unit: mm For switching I Features 0.75 max. 4.00.2 (0.8) 3.00.2 2.00.2 I Absolute Maximum Ratings (Ta = 25C) Parameter Drain to Source voltage Gate to Sou...
Description	For Switching
File Size	71.61K / 3 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SK3402-Z 2SK3402
OCR Text	mos FIELD EFFECT TRANSISTOR 2SK3402 SWITCHING N-CHANNEL POWER mos FET DESCRIPTION The 2SK3402 is N-Channel mos Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK340...
Description	Nch power mos FET SWITCHING N-CHANNEL POWER mosFET
File Size	127.51K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT30M85BVR APT30M85
OCR Text	mos V (R) Power mos V(R) is a new generation of high voltage N-Channel enhancement mode power mosFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power mos V(R) also achieves fas...
Description	POWER mos V 300V 40A 0.085 Ohm Power mos V is a new generation of high voltage N-Channel enhancement mode power mosFETs.
File Size	64.67K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd.
Part No.	APT30M85 APT30M85BVFR
OCR Text	mos V (R) FREDFET TO-247 Power mos V(R) is a new generation of high voltage N-Channel enhancement mode power mosFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power mos V...
Description	Power mos V is a new generation of high voltage N-Channel enhancement mode power mosFETs. 电源mos V是一个高电压N新一代通道增强型功率mosFET POWER mos V 300V 40A 0.085 Ohm
File Size	69.32K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BSP92
OCR Text	mos transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-mos transistor FEATURES * Low threshold voltage VGS(th) ...
Description	P-channel enhancement mode vertical D-mos transistor
File Size	48.25K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	RD09MUP2
OCR Text	mos FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD09MUP2 (a) 0.2+/-0.05 8.0+/-0.2 0.65+/-0.2 (c) (b) (b) 7.0+/-0.2 6.2+/-0.2 5.6+/-0.2 4.2+/-0.2 RoHS Compliance, Silicon mosFET Power Transistor, 520MHz, 8W DESCR...
Description	Silicon mosFET Power Transistor, 520MHz, 8W
File Size	148.99K / 7 Page	View it Online	Download Datasheet

				NEC
Part No.	UPA1706TP
OCR Text	mos FIELD EFFECT TRANSISTOR PA1706TP SWITCHING N-CHANNEL POWER mos FET DESCRIPTION The PA1706TP which has a heat spreader is N-Channel mos Field Effect Transistor designed for DC/DC converter and power management application of n...
Description	SWITCHING N-CHANNEL POWER mosFET
File Size	65.79K / 8 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	2SJ243 D11215EJ1V0DS00
OCR Text	mos FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL mos FET FOR SWITCHING The 2SJ243 is a P-channel vertical type mos FET that is driven at 2.5 V. Because this mos FET can be driven on a low voltage and because it is not necessary to consid...
Description	From old datasheet system P-CHANNEL mos FET FOR SWITCHING
File Size	58.34K / 6 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT50M85JVR
OCR Text	mos V (R) Power mos V(R) is a new generation of high voltage N-Channel enhancement mode power mosFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power mos V(R) also achieves fas...
Description	POWER mos IV 500V 50A 0.085 Ohm Power mos V is a new generation of high voltage N-Channel enhancement mode power mosFETs.
File Size	74.15K / 4 Page	View it Online	Download Datasheet

For mos Found Datasheets File :: 26975 Search Time::1.438ms
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