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Murata Manufacturing Co., L...
MURATA[Murata Manufacturing Co., Ltd.]
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| Part No. |
BS05N1NFAA BS05C BS05C1HFAA BS05C1HGCA BS05N1HFAA BS05N1HGAA
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| OCR Text |
...d Compact Type
BS05C/N Series
metal cap 8.80.2 Marking 0.8 4
1
1. High sensitivity and excellent gap characteristics 2. Output voltage is independent of scanning speed. 3. Compact size and light weight make them ideal for downsizing... |
| Description |
Magnetic Pattern Recognition Sensors
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| File Size |
216.33K /
10 Page |
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it Online |
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SEME-LAB[Seme LAB]
TT electronics Semelab Limited
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| Part No. |
BYT08-400-220M
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| OCR Text |
...AST RECOVERY RECTIFIER IN TO220 metal PACKAGE FOR HI-REL APPLICATIONS
FEATURES
16.38 16.89
13.39 13.64
123
12.70 19.05
* HERMETIC TO220 metal PACKAGE * ISOLATED CASE
0.89 1.14 2.54 BSC 2.65 2.75
TO220 metal PACKAGE
Comm... |
| Description |
DUAL FAST RECOVERY RECTIFIER IN TO220 metal PACKAGE FOR HI.REL APPLICATIONS
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| File Size |
24.90K /
2 Page |
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it Online |
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IMP Inc
IMP[IMP, Inc]
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| Part No. |
C0810
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| OCR Text |
...Res. Gate Poly Sheet Resistance metal-1 Sheet Resistance metal-2 Sheet Resistance Passivation Thickness High Resistance Poly Capacitance Gate Oxide metal-1 to Poly1 metal-1 to Silicon metal-2 to metal-1 Poly-1 to Poly-2 Symbol VTN N N LeffN... |
| Description |
CMOS 0.8mm High-Resistance Poly for Analog
From old datasheet system
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| File Size |
29.05K /
2 Page |
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it Online |
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IMP[IMP, Inc]
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| Part No. |
C1004
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| OCR Text |
...Thickness Poly Sheet Resistance metal-1 Sheet Resistance metal-2 Sheet Resistance Passivation Thickness
Symbol N-well(f) N+ xjN+ P+ xjP+ TGOX TFIELD POLY M1 M2 TPASS
Minimum 0.8 20 60
15
Typical 1.0 35 0.45 80 0.5 20 700 22 50 3... |
| Description |
Process C1004
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| File Size |
30.83K /
2 Page |
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IMP Inc
IMP[IMP, Inc]
IMP Inc
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| Part No. |
C1210
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| OCR Text |
...sistance Bottom Poly Sheet Res. metal-1 Sheet Resistance metal-2 Sheet Resistance Passivation Thickness Capacitance Gate Oxide metal-1 to Poly-1 metal-1 to Silicon metal-2 to metal-1 Poly-1 to Poly-2
Symbol N-well(f) N+ xjN+ P+ xjP+ TGOX... |
| Description |
Process C1210 CMOS 1.2mm Zero Threshold Devices
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| File Size |
33.75K /
4 Page |
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it Online |
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IMP[IMP, Inc]
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| Part No. |
C1226
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| OCR Text |
metal - Double Poly
Electrical Characteristics
T = 25oC Unless otherwise noted
Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage ... |
| Description |
CMOS 1.2um 100V CMOS, Double metal - Double Poly
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| File Size |
39.21K /
2 Page |
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it Online |
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Price and Availability
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