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For memory Found Datasheets File :: 71382    Search Time::1.718ms    
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    K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text ...uct Planning & Application Eng. memory Division Samsung Electronics Co. 1 K9F5608U0C-VCB0,VIB0,FCB0,FIB0 K9F5608Q0C-DCB0,DIB0,HCB0,HIB0 K9F5608U0C-YCB0,YIB0,PCB0,PIB0 K9F5608U0C-DCB0,DIB0,HCB0,HIB0 K9F5616Q0C-DCB0,DIB0,HCB0,HIB0 K9F5...
Description 32M x 8 Bit NAND Flash memory
32M x 8 Bit / 16M x 16 Bit NAND Flash memory
512Mb/256Mb 1.8V NAND Flash Errata

File Size 653.97K  /  39 Page

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    K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0

Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
Part No. K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text memory FLASH memory Revision History Revision No. History 0.0 0.1 0.2 Initial issue. Revised real-time map-out algorithm(refer to technical notes) 1. Changed device name i. KM29U256T -> K9F5608U0M-YCB0 ii. KM29U256IT -> K9F5608U0M-Y...
Description From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash memory

File Size 350.10K  /  26 Page

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    K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0

Samsung Electronic
Samsung semiconductor
Part No. K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text memory FLASH memory Revision History Revision No. History 0.0 Initial issue. Draft Date July 17th 2000 Remark Advanced Information Preliminary 0.1 1. Support copy-back program - The copy-back program is configured to q...
Description 32M x 8 Bit NAND Flash memory

File Size 607.24K  /  29 Page

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    CY14C512I13

Cypress Semiconductor
Part No. CY14C512I13
OCR Text ...onvolatile static random access memory (nvsram) ? internally organized as 64 k 8 ? store to quantumtrap nonvolatile elements initiated automatically on power-down (a utostore) or by using i 2 c command (software store) or hsb pin ...
Description 512-Kbit (64 K x 8) Serial (I2C) nvSRAM with Real Time Clock

File Size 1,838.15K  /  41 Page

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    SDU06464B5B61MT-50R

List of Unclassifed Manufacturers
List of Unclassifed Man...
Part No. SDU06464B5B61MT-50R
OCR Text ...ynchronous sdram dual -in-line memory modules (dimms), which are organized as x64 high speed memory arrays designed for use in non-pa rity applications. dimms are assembled in tsop technology. the passive devices and the eep...
Description 512MB DDR ?SDRAM DIMM

File Size 200.54K  /  12 Page

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    SDU01G64H3BF2MT-50R SDU01G64H3BF2MT-60R

List of Unclassifed Manufacturers
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Part No. SDU01G64H3BF2MT-50R SDU01G64H3BF2MT-60R
OCR Text ... pin 64 - bit dual - in - line memory module. double date rate synchronous dram module for industrial applications ? v dd 2.5v 0.2v, v dd q 2.5v 0.2v auto refresh and self r efresh modes: 7.8125 s ? 2.5v i/o ( sstl_...
Description 1024MB DDR ?unbuffered DDR1 UDIMM

File Size 521.72K  /  13 Page

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    LPC2292 LPC2292FBD144 LPC2294JBD LPC2294 LPC2294JBD144

PHILIPS[Philips Semiconductors]
Part No. LPC2292 LPC2292FBD144 LPC2294JBD LPC2294 LPC2294JBD144
OCR Text memory interface Rev. 01 -- 05 February 2004 Preliminary data 1. General description The LPC2292/LPC2294 are based on a 16/32 bit ARM7TDMI-STM CPU with real-time emulation and embedded trace support, together with 256 kilobytes (kB) of...
Description 16/32-bit ARM microcontrollers 256 kB ISP/IAP Flash with CAN 10-bit ADC and external memory interface
16/32-bit ARM microcontrollers 256 kB ISP/IAP Flash with CAN, 10-bit ADC and external memory interface

File Size 164.40K  /  40 Page

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    M2732A 2377 M2732A-20F1 M2732A-2F6 M2732A-3F1 M2732A-4F1 M2732A-4F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-20F6 M2732A-25F1

SGS Thomson Microelectronics
STMicroelectronics
意法半导
Part No. M2732A 2377 M2732A-20F1 M2732A-2F6 M2732A-3F1 M2732A-4F1 M2732A-4F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-20F6 M2732A-25F1 M2732A-25F6 M2732A-3F6
OCR Text ...e and electrically programmable memory EPROM. It is organized as 4,096 words by 8 bits. The M2732A with its single 5V power supply and with an access time of 200 ns, is ideal suited for applications where fast turn around and pattern experi...
Description NMOS 32K (4K x 8) UV EPROM, 250ns
From old datasheet system
NMOS 32K 4K x 8 UV EPROM
NMOS 32K (4K x 8) UV EPROM(NMOS 32K紫外线擦除EPROM)

File Size 91.33K  /  9 Page

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    M2764A M2764A-2F1 M2764A-3F1 M2764AF1 M27256F6 M27256-1F1 M27256-1F6 M27256-20F1 M27256-20F6 M27256-25F1 M27256-25F6 M27

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
N.A.
ST Microelectronics
Part No. M2764A M2764A-2F1 M2764A-3F1 M2764AF1 M27256F6 M27256-1F1 M27256-1F6 M27256-20F1 M27256-20F6 M27256-25F1 M27256-25F6 M27256-2F1 M27256-2F6 M27256-3F1 M27256-3F6 M27256-4F1 M27256-4F6 M27256F1
OCR Text ...e and electrically programmable memory EPROM. It is organized as 8,192 words by 8 bits. The M27C64A is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet l...
Description NMOS 64K 8K x 8 UV EPROM NMOS4KK的8紫外线存储器
NMOS 256K 32K x 8 UV EPROM
NMOS 64K (8K x 8) UV EPROM

File Size 107.86K  /  10 Page

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    M29W640DB M29W640DB70N1E M29W640DB70N1F M29W640DB70N1T M29W640DB70N6E M29W640DB70N6F M29W640DB70N6T M29W640DB70ZA1E M29W

STMicroelectronics
Part No. M29W640DB M29W640DB70N1E M29W640DB70N1F M29W640DB70N1T M29W640DB70N6E M29W640DB70N6F M29W640DB70N6T M29W640DB70ZA1E M29W640DB70ZA1F M29W640DB70ZA1T M29W640DB70ZA6E M29W640DB70ZA6F M29W640DB70ZA6T M29W640DB90N1E M29W640DB90N1F M29W640DB90N1T M29W640DB90N6E M29W640DB90N6F M29W640DB90N6T M29W640DB90ZA1E M29W640DB90ZA1F M29W640DB90ZA1T M29W640DB90ZA6E M29W640DB90ZA6F M29W640DB90ZA6T M29W640DT M29W640DT70N1E M29W640DT70N1F M29W640DT70N1T M29W640DT70N6E M29W640DT70N6F M29W640DT70N6T M29W640DT70ZA1E M29W640DT70ZA1F M29W640DT70ZA1T M29W640DT70ZA6E M29W640DT70ZA6F M29W640DT70ZA6T M29W640DT90N1E M29W640DT90N1F M29W640DT90N1T M29W640DT90N6E M29W640DT90N6F M29W640DT90N6T M29W640DT90ZA1E M29W640DT90ZA1F M29W640DT90ZA1T M29W640DT90ZA6E M29W640DT90ZA6F M29W640DT90ZA6T
OCR Text memory PRELIMINARY DATA FEATURES SUMMARY s SUPPLY VOLTAGE - VCC = 2.7V to 3.6V for Program, Erase, Read - VPP =12 V for Fast Program (optional) s s Figure 1. Packages ACCESS TIME: 70, 90 ns PROGRAMMING TIME - 10 s per Byte/Word t...
Description 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash memory

File Size 381.58K  /  50 Page

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