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    IDT71342SA20J IDT71342SA20PF IDT71342SA25J IDT71342SA25PF IDT71342SA35J IDT71342SA35PF IDT71342SA45J IDT71342SA45PF IDT7

Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Part No. IDT71342SA20J IDT71342SA20PF IDT71342SA25J IDT71342SA25PF IDT71342SA35J IDT71342SA35PF IDT71342SA45J IDT71342SA45PF IDT71342SA55J IDT71342SA55PF IDT71342SA70J IDT71342SA70PF IDT71342LA70PF IDT71342SA IDT7134 IDT71342LA70J IDT71342LA55J IDT71342LA55PF IDT71342LA35J IDT71342LA35PF IDT71342 IDT71342LA IDT71342LA20J IDT71342LA20PF IDT71342LA25J IDT71342LA25PF IDT71342LA45J IDT71342LA45PF
OCR Text ...ds or writes to any location in memory. To assist in arbitrating between ports, a fully independent semaphore logic block is provided. This block contains unassigned flags which can be accessed by either side; however, only one side can con...
Description HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE 高K的8双端口静态RAM的信号量
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE 4K X 8 DUAL-PORT SRAM, 45 ns, PQFP64
350V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
500V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail

File Size 144.80K  /  13 Page

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    IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V

IDT[Integrated Device Technology]
Part No. IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V632S6PFG8 IDT71V632S6PFI IDT71V632S6PFI8 IDT71V632S5PF8 IDT71V632S5PFG IDT71V632S5PFG8 IDT71V632S5PFI8 IDT71V632S7PF IDT71V632S7PF8 IDT71V632S7PFG IDT71V632S7PFI IDT71V632S7PFI8 IDT71V632S8PF IDT71V632S8PF8
OCR Text ... x x x x x x 64K x 32 memory configuration Supports high system speed: Commercial: - A4 4.5ns clock access time (117 MHz) Commercial and Industrial: - 5 5ns clock access time (100 MHz) - 6 6ns clock access time (83 MHz) - 7 7ns cl...
Description 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter/ Single Cycle Deselect
3.3V 64K x 32 Pipelined
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter Single Cycle Deselect

File Size 271.54K  /  19 Page

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    IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T IS42S16100C1-7TI IS42S161

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Part No. IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T IS42S16100C1-7TI IS42S16100C1-7TL IS42S16100C1-7TLI
OCR Text ... 11 ROW ADDRESS BUFFER memory CELL ARRAY 2048 11 BANK 0 DQM SENSE AMP I/O GATE A10 8 COLUMN ADDRESS BUFFER BURST COUNTER COLUMN ADDRESS LATCH DATA IN BUFFER 16 16 256 COLUMN DECODER ROW DECODER M...
Description 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 750.59K  /  79 Page

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    IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL

ETC[ETC]
Part No. IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL
OCR Text ...eed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 4,096 rows by 256...
Description 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 466.90K  /  55 Page

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    IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S1680

ISSI[Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Part No. IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S16800A-7T IS42S16800A-7TI IS42S16800A-7TL IS42S16800A-7TLI IS42S32400A IS42S32400A-10T IS42S32400A-10TI IS42S32400A-10TL IS42S32400A-10TLI IS42S32400A-6T IS42S32400A-6TL IS42S32400A-7T IS42S32400A-7TI IS42S32400A-7TL IS42S32400A-7TLI IS42S81600A IS42S81600A-10T IS42S81600A-10TI IS42S81600A-10TL IS42S81600A-6T IS42S81600A-6TL IS42S81600A-7T IS42S81600A-7TI IS42S81600A-7TL IS42S81600A-7TLI 42S16800A
OCR Text ...eed CMOS, dynamic random-access memory designed to operate in 3.3V VDD and 3.3V VDDQ memory systems containing 134,217,728 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 33,554,432-bit bank is organized a...
Description 16Meg x 8 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM

File Size 534.78K  /  61 Page

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    IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200

ISSI[Integrated Silicon Solution, Inc]
ETC
Part No. IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200
OCR Text ...eed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 2,048 rows by 256...
Description 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 953.57K  /  55 Page

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    Philips
Part No. ISP1362
OCR Text ...096 bytes of multiconfiguration memory x Supports all four types of USB transfers: control, bulk, interrupt and isochronous x Supports multiframe buffering for isochronous transfer x Supports automatic interrupt polling rate mechanism x Sup...
Description Single-chip Universal Serial Bus On-The-Go controller

File Size 528.15K  /  148 Page

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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text memory Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash memory Revision History Revision No. History 0.0 1.0 Initial issue. 1.Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & ...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash memory

File Size 679.73K  /  42 Page

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    K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text ...0B-DCB0,DIB0,HCB0,HIB0 FLASH memory Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash memory Revision History Revision No. History 0.0 0.1 Initial issue. At Read2 operation in X16 device : A3 ~ A7 are Don' care ==> A3 ~ A7 ar...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash memory
32M x 8 Bit , 16M x 16 Bit NAND Flash memory

File Size 601.33K  /  34 Page

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For memory Found Datasheets File :: 71383    Search Time::1.157ms    
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