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  low-charge-injection Datasheet PDF File

For low-charge-injection Found Datasheets File :: 2427    Search Time::1.75ms    
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    UBA2014 UBA2014P UBA2014T UBA2014T/N1 UBA2014P/N1

PHILIPS[Philips Semiconductors]
Part No. UBA2014 UBA2014P UBA2014T UBA2014T/N1 UBA2014P/N1
OCR Text ...ph VOL(CT) VOH(CT) preheat time LOW-level output voltage at pin CT HIGH-level output voltage at pin CT CCT = 330 nF; RIREF = 33 k 1.6 - - 1....charge. Adaptive non-overlap The non-overlap time is realized with an adaptive non-overlap circuit (...
Description UBA2014; 600 V driver IC for HF fluorescent lamps

File Size 105.46K  /  20 Page

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    UBA2021 UBA2021P UBA2021T

PHILIPS[Philips Semiconductors]
Part No. UBA2021 UBA2021P UBA2021T
OCR Text ...tion * Protection against a too-low drive voltage for the power MOSFETs. QUICK REFERENCE DATA SYMBOL High voltage supply VFS Start-up state ...charge is drained by an internal clamp that turns on at voltage VVS(clamp). Minimum gate-source volt...
Description From old datasheet system
630 V driver IC for CFL and TL lamps

File Size 93.30K  /  20 Page

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    BTS4140N Q67060-S6084-A101

INFINEON[Infineon Technologies AG]
Part No. BTS4140N Q67060-S6084-A101
OCR Text ...d loss of Vbb protection * Very low standby current * Reverse battery protection * Improved electromagnetic compatibility (EMC) Application ...charge pump and current controlled input, monolithically integrated in Smart SIPMOS technology. Prov...
Description Smart High Side Switches - 1x1000m Vbb 4,9-60V SOT223
Smart High-Side Power Switch One Channel: 1 x 1з
Smart High-Side Power Switch One Channel: 1 x 1?

File Size 431.65K  /  18 Page

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    BTS4141D Q67060-S6098

INFINEON[Infineon Technologies AG]
Part No. BTS4141D Q67060-S6098
OCR Text ...d loss of Vbb protection * Very low standby current * Reverse battery protection with external resistor * Improved electromagnetic compatibi...charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS tech...
Description Smart High-Side Power Switch 1 Channel: 1 x 200m?/a>
Smart High Side Switches - 1x 200m? 12-45V P-TO-252
Smart High-Side Power Switch 1 Channel: 1 x 200mз
POWERLINE: RP15-S_DEW - 4:1 Wide Input Voltage Range- 15 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x40.6x10.2mm Package- Efficiency to 82%

File Size 458.59K  /  19 Page

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    BTS4141N Q67060-S6127 Q67060-S6120

INFINEON[Infineon Technologies AG]
Part No. BTS4141N Q67060-S6127 Q67060-S6120
OCR Text ...d loss of Vbb protection * Very low standby current * Reverse battery protection with external resistor * Improved electromagnetic compatibi...charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS tech...
Description Smart High-Side Power Switch 1 Channel: 1 x 200m?/a>
Smart High-Side Power Switch 1 Channel: 1 x 200mз
Smart High Side Switches - 1x 200m? Vbb12-45V, SOT223

File Size 455.01K  /  19 Page

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    BTS4142N Q67060-S6128 Q67060-S6121

INFINEON[Infineon Technologies AG]
Part No. BTS4142N Q67060-S6128 Q67060-S6121
OCR Text ...d loss of Vbb protection * Very low standby current * Reverse battery protection with external resistor * Improved electromagnetic compatibi...charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS tech...
Description Smart High-Side Power Switch 1 Channel: 1 x 200m?/a>
Smart High-Side Power Switch 1 Channel: 1 x 200mз
Smart High Side Switches - 1x200m? Vbb 12-45V, SOT 223

File Size 455.20K  /  19 Page

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    FDU2572 FDD2572

FAIRCHILD[Fairchild Semiconductor]
Part No. FDU2572 FDD2572
OCR Text ...tot) = 26nC (Typ.), VGS = 10V * Low Miller Charge * Low QRR Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Qualified to AEC Q101 Formerly developmental type 82860 Applications * DC/DC converters and Off-Line UPS * Di...
Description N-Channel PowerTrench MOSFET 150V, 29A, 54m?/a>
N-Channel PowerTrench MOSFET 150V, 29A, 54mз
N-Channel PowerTrench MOSFET 150V/ 29A/ 54m
N-Channel PowerTrench MOSFET 150V, 29A, 54m?/a>

File Size 184.32K  /  11 Page

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    LMU216JC20 LMU216JC25 LMU16

http://
LODEV[LOGIC Devices Incorporated]
Part No. LMU216JC20 LMU216JC25 LMU16
OCR Text ...LMU16 and LMU216 are highspeed, low power 16-bit parallel multipliers. The LMU16 and LMU216 are functionally identical; they differ only in ...charge. Neverthe- used. Parasitic capacitance is 30 pF less, conventional precautions should minimum...
Description 16 x 16-bit Parallel Multiplier

File Size 186.72K  /  7 Page

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    LMU217 LMU217JC25 LMU217JC35

Vicor, Corp.
LODEV[LOGIC Devices Incorporated]
Part No. LMU217 LMU217JC25 LMU217JC35
OCR Text ...ON The LMU217 is a high-speed, low RND is loaded on the rising edge of power 16-bit parallel multiplier. CLK, provided either ENA or ENB ar...charge. Neverthe- used. Parasitic capacitance is 30 pF less, conventional precautions should minimum...
Description GIGATRUE 550 CAT PATCH CBL NO BOOT 30FT YW 25 PK 16-BIT, DSP-MULTIPLIER, PQCC68
16 x 16-bit Parallel multiplier

File Size 177.27K  /  6 Page

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    STH60N10 STH60N10FI STW60N10 STH60N10_FI

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STH60N10 STH60N10FI STW60N10 STH60N10_FI
OCR Text ...ETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 2 1 3 2 3 2 TO-218 1 ISOWATT218 1 APPLICATIONS HIGH CURRENT, HIGH SPEED...
Description N-CHANNEL MOSFET
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 244.64K  /  11 Page

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For low-charge-injection Found Datasheets File :: 2427    Search Time::1.75ms    
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