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  ism-b Datasheet PDF File

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS7N60B-O-B-N-B JCS7N60C-O-C-N-B JCS7N60F-O-F-N-B JCS7N60S-O-S-N-B
OCR Text ...recovery charge VSD IS 7.0 A ISM - - 28 A VGS=0V, IS=7.0A - - 1.4 V trr Qrr VGS=0V, IS=7.0A dIF/dt=10...B/C 0.85 62.5 JCS7N60F 2.6 62.5 Parameter Thermal Resistance, Junction to Case Thermal Resistanc...
Description N-CHANNEL MOSFET

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS10N60BT-O-B-N-B
OCR Text ...recovery charge VSD IS 9.5 A ISM - - 38 A VGS=0V, IS=9.5A - 1.05 - V trr Qrr VGS=0V, IS=9.5A (note 4) dIF/dt=100A/s - 425 4.31 - ns C THERMAL CHARACTERISTIC Max JCS10N60BT 0.7 62....
Description N-CHANNEL MOSFET

File Size 705.92K  /  9 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS5N50CT-O-C-N-B JCS5N50T JCS5N50FT-O-F-N-B JCS5N50RT-O-R-N-B
OCR Text ...e recovery charge VSD IS 5 A ISM - - 20 A VGS=0V, IS=5A - - 1.4 V trr Qrr VGS=0V, IS=5A (note 4) dIF/dt=100A/s - 268 2.1 - ns C THERMAL CHARACTERISTIC Max JCS5N50VT/RT JCS5N50CT J...
Description N-CHANNEL MOSFET

File Size 1,619.91K  /  12 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS5N60VB-O-V-N-B JCS5N60RB-O-R-N-B JCS5N60B JCS5N60FB-O-F-N-B JCS5N60CB-O-C-N-B
OCR Text ...e recovery charge VSD IS 5 A ISM - - 20 A VGS=0V, IS=5.0A - - 1.4 V trr Qrr VGS=0V, IS=5.0A (note 4) ...B Maximum Safe Operating Area For JCS5N60FB Maximum Drain Current vs. Case Temperature 6 4...
Description N-CHANNEL MOSFET

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    Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 3N60L-B-TA3-T 3N60 3N60-A-TA3-T 3N60-B-TA3-T 3N60L-A-TA3-T
OCR Text ...ximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 3.0 A, dIF/dt = 100 A/s (Note 4) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 40mH, IAS = 3.0A, VDD ...
Description 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 3安培00/650伏特N沟道功率MOSFET

File Size 158.82K  /  8 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
http://
Part No. JCS740F-O-F-N-B JCS740C-O-C-N-B JCS740S-O-S-N-B JCS740B-O-B-N-B
OCR Text ... recovery charge VSD IS 10 A ISM - - 40 A VGS=0V, IS=10A - 1.5 - V trr Qrr VGS=0V, IS=10A dIF/dt=100A...B/C 0.93 62.5 Max JCS740F 2.86 62.5 Parameter Thermal Resistance, Junction to Case Thermal Resi...
Description N-CHANNEL MOSFET

File Size 1,252.24K  /  12 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS12N60FT-O-F-N-B JCS12N60CT-O-C-N-B JCS12N60T
OCR Text ... recovery charge VSD IS 12 A ISM - - 48 A VGS=0V, IS=12A - - 1.39 V trr Qrr VGS=0V, IS=12A (note 4) dIF/dt=100A/s - 418 4.85 - ns C THERMAL CHARACTERISTIC JCS12N60CT 0.5 62.5 Note...
Description N-CHANNEL MOSFET

File Size 1,123.07K  /  10 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS10N65FT-O-F-N-B JCS10N65CT-O-C-N-B JCS10N65T
OCR Text ...recovery charge VSD IS 9.5 A ISM - - 38 A VGS=0V, IS=9.5A - 1.05 - V trr Qrr VGS=0V, IS=9.5A (note 4) dIF/dt=100A/s - 425 4.31 - ns C THERMAL CHARACTERISTIC JCS10N65CT 0.7 62.5 No...
Description N-CHANNEL MOSFET

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS12N65FT-O-F-N-B JCS12N65CT-O-C-N-B JCS12N65T
OCR Text ... recovery charge VSD IS 12 A ISM - - 48 A VGS=0V, IS=12A - - 1.39 V trr Qrr VGS=0V, IS=12A (note 4) dIF/dt=100A/s - 418 4.85 - ns C THERMAL CHARACTERISTIC JCS12N65CT 0.5 62.5 Note...
Description N-CHANNEL MOSFET

File Size 1,131.35K  /  10 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS640F-O-F-N-B JCS640C-O-C-N-B
OCR Text ... recovery charge VSD IS 18 A ISM - - 72 A VGS=0V, IS=18.0A - - 1.48 V trr Qrr VGS=0V, IS=18.0A dIF/dt=100A/s (note 4) - 195 1.48 - ns C THERMAL CHARACTERISTIC JCS640C 0.89 62.5 No...
Description N-CHANNEL MOSFET

File Size 1,175.72K  /  10 Page

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