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  inductive Datasheet PDF File

For inductive Found Datasheets File :: 57303    Search Time::4.89ms    
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    ST Microelectronics
Part No. STL6N3LLH6
OCR Text ... figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform ...
Description N-channel 30 V, 0.021 Ohm typ., 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in PowerFLAT 2x2 package

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    ST Microelectronics
Part No. STGDL6NC60DI STGPL6NC60DI
OCR Text ...5/18 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 3 a r g = 10 ? , v ge = 15 v (s...
Description 6 A, 600 V hyper fast IGBT with Ultrafast diode

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    Microsemi
Part No. APT60M75L2LLG
OCR Text ...= 73a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 400v, v gs = 15v i d = 73a, r g = 5 ? inductive switching @ 125c v dd = 400v v gs = 15v i d = 73a, r g = 5 ? min typ max 89301130 50 195 48 100 23...
Description MOSFET

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    BUJ105AB-15

NXP Semiconductors
Part No. BUJ105AB-15
OCR Text ...time 0.3 0.5 s switching times (inductive load) i con = 5 a; i bon = 1 a; l b = 1 h; -v bb = 5 v t s turn-off storage time 1.2 1.7 s t f turn-off fall time 20 50 ns switching times (inductive load) i con = 5 a; i bon = 1 a; l b = 1 h...
Description Silicon Diffused Power Transistor

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    BUJ103AX-15

NXP Semiconductors
Part No. BUJ103AX-15
OCR Text ...e 0.3 0.43 m s switching times (inductive load) i con = 2 a; i bon = 0.4 a; l b = 1 m h; -v bb = 5 v t s turn-off storage time 1.2 1.33 m s t f turn-off fall time 33 80 ns switching times (inductive load) i con = 2 a; i bon = 0.4 a; ...
Description Silicon Diffused Power Transistor

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    BUJ103A-15

NXP Semiconductors
Part No. BUJ103A-15
OCR Text ...- 0.3 0.35 ? s switching times (inductive load); see figure 7 and 8 t stg storage time i con = 2 a; i bon = 0.4 a; l b = 1 ? h; v bb = ? 5v -1.21.4 ? s t f fall time - 30 60 ns switching times (inductive load); see figure 7 and 8...
Description Silicon diffused power transistor

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    Wurth Elektronik GmbH &...
Part No. 7448990220
OCR Text ...ronik eisos gmbh & co. kg emc & inductive solutions max-eyth-str. 1 74638 waldenburg germany tel. +49 (0) 79 42 945 - 0 www.we-online.com eisos@we-online.com created checked general tolerance projection method kas arpa din iso 2768-1m descr...
Description WE-MCRI SMD Molded Coupled Inductor

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    Microsemi
Part No. APT38N60SC6
OCR Text ...e 58 t d(on) turn-on delay time inductive switching v gs = 15v v dd = 400v i d = 38a @ 25c r g = 4.3 14 ns t r rise time 29 t d(off) turn-off delay time 118 t f fall time 69 e on turn-on switching energy 5 inductive switching @ 25c...
Description MOSFET

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    ST Microelectronics
Part No. STB155N3H6 STD155N3H6
OCR Text ... table 7. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15 v, i d = 40 a, r g = 4.7 , v gs = 10 v (see figure 13 ) - 20 90 - ns ns t d(off...
Description N-channel 30 V, 2.5 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
N-channel 30 V, 2.5 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

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    Microsemi
Part No. APT6025BFLLG
OCR Text ...= 24a @ 25c r g = 1.6 ? inductive switching @ 25c v dd = 400v, v gs = 15v i d = 24a, r g = 5 ? inductive switching @ 125c v dd = 400v, v gs = 15v i d = 24a, r g = 5 ? min typ max 2910 535 5565 15 34 18 1...
Description FREDFETs

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