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  inductive Datasheet PDF File

For inductive Found Datasheets File :: 45689    Search Time::1.36ms    
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    FZ1200R17HE4

Infineon Technologies AG
Part No. FZ1200R17HE4
OCR Text ...uktivelast turn-ondelaytime,inductiveload i c = 1200 a, v ce = 900 v v ge = 15 v r gon = 0,68 w t d on 0,68 0,79 0,81 s s s t vj = 25c t vj = 125c t vj = 150c anstiegszeit,induktivelast risetime,inductiveload i c = ...
Description ESD / Transient Protection Diode for Near Field Communication (NFC)

File Size 608.99K  /  9 Page

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    RECTRON LTD
Part No. FFM207-W FFM201-W
OCR Text ... half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. ffm201 thru ffm207 do-214aa maximum ra tings (at t a = 25 o c unless otherwise noted) surface mount glass passivated voltage range 50 to 1000 vol...
Description 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AA
2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA

File Size 27.19K  /  3 Page

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    BTS117

INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BTS117
OCR Text ...on * All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V and 24 V DC applications * Replaces electromechanical relays and discrete circuits General Descriptio...
Description 10 A BUF OR INV BASED PRPHL DRVR, PSFM3
Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection)
From old datasheet system

File Size 137.31K  /  10 Page

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    BTS118D

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BTS118D
OCR Text ...tion * All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V DC applications * Replaces electromechanical relays and discrete circuits General Description N chan...
Description Smart Lowside Power Switch

File Size 331.57K  /  10 Page

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    BUH1215 4496

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BUH1215 4496
OCR Text ...VE LO AD Storage Time Fall Time inductive LO AD Storage Time Fall Time Test Cond ition s V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA I E = 10 mA I C = 12 A I C = 12 A I C = 12 A I C = 12 A IB = 2.4 A IB = 2.4 A VCE = 5 V VCE = 5 V 7...
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
From old datasheet system

File Size 73.01K  /  7 Page

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    65NF06

STMicroelectronics
Part No. 65NF06
OCR Text ... figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive wavefo rm figure 17. switching time waveform ...
Description Search --To STD65NF06

File Size 340.21K  /  14 Page

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    STL6N3LLH6

STMicroelectronics
Part No. STL6N3LLH6
OCR Text ... figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform ...
Description N-channel 30 V, 0.021 typ., 6 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT

File Size 1,060.80K  /  14 Page

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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ...min. Switching Characteristics, inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 350 700 ns VCC = 1200 V, VGE = 15 V, IC = 50 A RGon = 27 Rise time tr 150 300 VCC = 1200 V, VGE = 15 V, IC = 50 ...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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