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igt20ma Datasheet PDF File

For igt20ma Found Datasheets File :: 18 Search Time::1.172ms
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					MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BCR16PM
OCR Text	...s 0.5C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1) Voltage class VDRM (V) (dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-8A/...
Description	MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
File Size	82.38K / 5 Page	View it Online	Download Datasheet

					MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BCR8PM
OCR Text	...s 0.5C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1) Voltage class VDRM (V) (dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-4.0...
Description	MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
File Size	82.13K / 5 Page	View it Online	Download Datasheet

					MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BCR6AM BCR6
OCR Text	...s 1.0C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1) Voltage class VDRM (V) (dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-3A/...
Description	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
File Size	80.34K / 5 Page	View it Online	Download Datasheet

					MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BCR12CM BCR12
OCR Text	...s 1.0C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1) Voltage class VDRM (V) (dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-6A/...
Description	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE MITSUBISHISEMICONDUCTOR(TRIAC)MEDIUMPOWERUSENON-INSULATEDTYPE.PLANARPASSIVA..
File Size	80.80K / 5 Page	View it Online	Download Datasheet

					MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BCR8CM BCR8
OCR Text	...s 1.0C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1) Voltage class VDRM (V) (dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-4A/...
Description	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE MITSUBISHISEMICONDUCTOR(TRIAC)MEDIUMPOWERUSENON-INSULATEDTYPE.PLANARPASSIVA..
File Size	81.41K / 5 Page	View it Online	Download Datasheet

					Mitsubishi Electric Semiconductor
Part No.	BCR16CM
OCR Text	...s 1.0C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1) Voltage class VDRM (V) (dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-8A/...
Description	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
File Size	82.35K / 5 Page	View it Online	Download Datasheet

					MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BCR10CM
OCR Text	...s 1.0C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1) Voltage class VDRM (V) (dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-5A/...
Description	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
File Size	83.01K / 5 Page	View it Online	Download Datasheet

					POWEREX[Powerex Power Semiconductors] Mitsubishi Electric Semiconductor
Part No.	BCR16CS
OCR Text	...s 1.0C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1) Voltage class VDRM (V) (dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-8A/...
Description	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
File Size	76.43K / 5 Page	View it Online	Download Datasheet

					POWEREX[Powerex Power Semiconductors] MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	BCR8CS BCR8
OCR Text	...s 1.0C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1) Voltage class VDRM (V) (dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-4A/...
Description	MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
File Size	74.96K / 5 Page	View it Online	Download Datasheet

					Mitsubishi Electric Semiconductor
Part No.	BCR10PM
OCR Text	...s 0.5C/W. V5. High sensitivity (igt20ma) is also available. (IGT item 1) Voltage class VDRM (V) (dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-5.0...
Description	MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
File Size	82.79K / 5 Page	View it Online	Download Datasheet

For igt20ma Found Datasheets File :: 18 Search Time::1.172ms
Page :: | <1> | 2 |

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