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id-11.2a Datasheet PDF File

For id-11.2a Found Datasheets File :: 4330 Search Time::1.687ms
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				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2764-01R
OCR Text	...e Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg Rating 800 4 16 30 4 254 80 150 -55 ~ +150 Unit V A A V A mJ W C C...11/98 N-channel MOS-FET 800V 4 2SK2764-01R FAP-IIS Series Drain-Source On-State Resistan...
Description	N-channel MOS-FET
File Size	292.33K / 2 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BTS118D
OCR Text	...ent Clamping energy VDS RDS(on) ID(Nom) EAS 42 100 2.4 2 V mW A J Application * All kinds of resistive, inductive and capacitive loads i...11 6V 5V 4V max. 16 14 10 IDSS 9 8 7 6 ID 12 10 8 6 4 2 0 0 V 5 3V 4 3...
Description	Smart Lowside Power Switch
File Size	331.57K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1902 IRF1B902 IRF1902TR
OCR Text	...85@VGS = 4.5V 170@VGS = 2.7V ID 4.0A 3.2A These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processi...11/15/01 IRF1902 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=20V)
File Size	105.83K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9952
OCR Text	...rent TA = 25C TA = 70C V DS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG 44 2.0 3.5 2.8 16 1.7 N-Channel Maximum P-Channel 30 20 -2.3...11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF9952 100 VGS - 15V - ...
Description	Power MOSFET(Vdss= -30V)
File Size	128.20K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9956
OCR Text	...rrent TA = 25C TA = 70C VDS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Maximum 30 20 3.5 2.8 16 1.7 2.0 1.3 44 2.0 0.20 5.0 -55 to + 1...11 ) ISD 2.0A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 22mH RG = 25...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)
File Size	98.88K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text	... = -55V RDS(on) = 0.175 G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques...11 ) Pulse width 300s; duty cycle 2%. Uses IRF9Z24N data and test conditions RG = 25, IAS ...
Description	-60V Single P-Channel HEXFET Power MOSFET in a TO-262 package -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.175ohm，身份证\u003d- 12A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)
File Size	167.05K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24N IRF9Z24NPBF
OCR Text	... = -55V RDS(on) = 0.175 G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques...11 ) ISD -7.2A, di/dt -280A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 3.7mH RG =...
Description	-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
File Size	105.16K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text	...S = -55V RDS(on) = 0.10 G ID = -19A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques...11 ) Pulse width 300s; duty cycle 2%. Uses IRF9Z34N data and test conditions Starting TJ...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	158.36K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9Z34N IRF9Z34NPBF
OCR Text	...S = -55V G S RDS(on) = 0.10 ID = -19A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to...11 ) ISD -10A, di/dt -290A/s, VDD V(BR)DSS , TJ 175C Starting TJ = 25C, L = 3.6mH RG =...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.35K / 8 Page	View it Online	Download Datasheet

				GE Security, Inc. GE[General Semiconductor] Panjit International Inc Shanghai Sunrise Electronics
Part No.	P6KE200 P6KE47 P6KE51 P6KE300 P6KE56 P6KE33 P6KE75 P6KE8.2 P6KE22 P6KE220 P6KE12 P6KE120 P6KE110 P6KE10 P6KE100 P6KE15 P6KE150 P6KE130 P6KE43 P6KE62 P6KE91 P6KE400 P6KE6.8 P6KE160 P6KE440 P6KE170 P6KE36 P6KE39 P6KE300A P6KE100A P6KE7.5A P6KE7.5 P6KE20 P6KE33A P6KE82 P6KE440A P6KE10A P6KE11 P6KE110A P6KE11A P6KE120A P6KE12A P6KE13 P6KE130A P6KE13A P6KE150A P6KE15A P6KE16 P6KE160A P6KE16A P6KE170A P6KE18 P6KE180 P6KE180A P6KE18A P6KE200A P6KE20A P6KE220A P6KE22A P6KE24 P6KE24A P6KE250 P6KE250A P6KE27 P6KE27A P6KE30 P6KE30A P6KE350 P6KE350A P6KE36A P6KE39A P6KE400A P6KE43A P6KE47A P6KE51A P6KE56A P6KE6.8A P6KE62A P6KE68 P6KE68A P6KE75A P6KE8.2A P6KE82A P6KE9.1 P6KE9.1A P6KE91A
OCR Text	...r bi-directional types Typical ID less than 1A above 10V High temperature soldering guaranteed: 265C/10 seconds, 0.375" (9.5mm) lead lengt...11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 ...
Description	TransZorb Transient Voltage Suppressor(TransZorb瞬变电压抑制 TransZorb瞬态电压抑制器（TransZorb瞬变电压抑制器） TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR TRANSZORB瞬态电压抑制器 GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 600Watt Peak Power 5.0 Watt Steady State) TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W
File Size	64.63K / 4 Page	View it Online	Download Datasheet

For id-11.2a Found Datasheets File :: 4330 Search Time::1.687ms
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