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For i-pak Found Datasheets File :: 6154    Search Time::1.109ms    
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    APT5024SVR

ADPOW[Advanced Power Technology]
Part No. APT5024SVR
OCR Text ...e Resistance (VGS = 10V, 0.5 I D[Cont.]) Ohms A nA Volts 050-5529 Rev - Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Ze...PAK Package Outline Drain (Heat Sink) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628)...
Description POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 32.19K  /  2 Page

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    APT5028SVR

ADPOW[Advanced Power Technology]
Part No. APT5028SVR
OCR Text ...0 0.28 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) O...PAK Package Outline Drain (Heat Sink) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628)...
Description POWER MOS V 500V 20A 0.280 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 64.83K  /  4 Page

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    APT8043BFLL APT8043SFLL

ADPOW[Advanced Power Technology]
Part No. APT8043BFLL APT8043SFLL
OCR Text ...N EC ION TT CE MA AN OR DV NF A I 800 20 80 30 40 400 3.20 300 20 30 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ ...PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 58.43K  /  2 Page

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    APT8043BLL APT8043SLL

ADPOW[Advanced Power Technology]
Part No. APT8043BLL APT8043SLL
OCR Text ...ce Breakdown Voltage (VGS = 0V, I D = 250A) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 800 20 0.43 100 500 100 3 5...PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.49K  /  2 Page

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    APT8052BFLL APT8052SFLL APT10026JFLL APT8014JFLL

ADPOW[Advanced Power Technology]
Part No. APT8052BFLL APT8052SFLL APT10026JFLL APT8014JFLL
OCR Text ...N EC ION TT CE MA AN OR DV NF A I 800 15 60 30 40 295 2.36 300 15 30 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ ...PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.43K  /  2 Page

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    APT8052BLL APT8052SLL APT10026JLL APT1201R4SLL APT12067JLL APT20M10JLL

ADPOW[Advanced Power Technology]
Part No. APT8052BLL APT8052SLL APT10026JLL APT1201R4SLL APT12067JLL APT20M10JLL
OCR Text ...N EC ION TT CE MA AN OR DV NF A I 800 15 60 30 40 295 2.36 300 15 30 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ ...PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.71K  /  2 Page

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    APT8065SVR

ADPOW[Advanced Power Technology]
Part No. APT8065SVR
OCR Text ...3 0.65 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) O...PAK Package Outline Drain (Heat Sink) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628)...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 800V 13A 0.650 Ohm

File Size 63.31K  /  4 Page

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    FQB5N20L FQI5N20L FQI5N20 FQI5N20LTU

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQB5N20L FQI5N20L FQI5N20 FQI5N20LTU
OCR Text ... Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM...
Description 200V LOGIC N-Channel MOSFET 4.5 A, 200 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
200V N-Channel Logic Level QFET

File Size 538.57K  /  9 Page

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    FQD5N20L FQU5N20L FQD5N20LTF FQD5N20LTM

FAIRCHILD[Fairchild Semiconductor]
Part No. FQD5N20L FQU5N20L FQD5N20LTF FQD5N20LTM
OCR Text ...!" " " D-PAK FQD Series i-pak GDS FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Cu...
Description 200V LOGIC N-Channel MOSFET
200V N-Channel Logic Level QFET

File Size 528.62K  /  9 Page

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    GA600HD25S

IRF[International Rectifier]
Part No. GA600HD25S
OCR Text ... VCE = 6.0V -- mV/C VCE = 6.0V, I C = 5.0mA,TC= 25/125C -- S VCE = 25V, I C = 600A 2.0 mA VGE = 0V, VCE = 250V 20 VGE = 0V, VCE = 250V, TJ =...Pak x x 6 [ . 2 3 6 ] MAX. Data and specifications subject to change without notice. Thi...
Description 250V DC-1 kHz (Standard) Single IGBT in a Dual INT-A-Pak package
Standard Speed IGBT

File Size 625.24K  /  10 Page

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