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  high operating temperature pol Datasheet PDF File

For high operating temperature pol Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C1C-C15 K6R1008C1C-I10 K6R1008C1C-I12 K6R1008C1C-I15 K6R1008C1C-J10 K6R

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C1C-C15 K6R1008C1C-I10 K6R1008C1C-I12 K6R1008C1C-I15 K6R1008C1C-J10 K6R1008C1C-J12 K6R1008C1C-J15 K6R1008C1C-T10 K6R1008C1C-T12 K6R1008C1C-T15 K6R1008C1C-P15 K6R1008C1C-L10 K6R1008C1C-L12 K6R1008C1C-L15 K6R1008C1C-P10 K6R1008C1C-P12 K6R1008C1C-JC15 K6R1008C1C-JI12 K6R1008C1C-JI10 K6R1008C1C-JC12
Description 128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit high-Speed CMOS Static RAM(5V operating). Operated at Commercial and Industrial temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作)。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns

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    K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C1A-C20 K6R1008C1A-I12 K6R1008C1A-I15 K6R1008C1A-I20 K6R1008C1A-TC20 K6

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C1A-C20 K6R1008C1A-I12 K6R1008C1A-I15 K6R1008C1A-I20 K6R1008C1A-TC20 K6R1008C1A-TI20 K6R1008C1A-JC15 K6R1008C1A-JI15 K6R1008C1A-JI20 K6R1008C1A-TC12 K6R1008C1A-TI12 K6R1008C1A-TI15
Description 128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 high Speed Static RAM5V operating, Revolutionary Pin out. Operated at Commercial and Industrial temperature Ranges. 128Kx8高速静态内存(5V工作),旋转引脚输出。在商用和工业温度范围操
128Kx8 high Speed Static RAM5V operating/ Revolutionary Pin out. Operated at Commercial and Industrial temperature Ranges.
128K x 8 high speed static RAM, 5V operating, 20ns
128K x 8 high speed static RAM, 5V operating, 15ns

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    KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 KM68257CL-15 KM68257CL-20 KM68257CLJ-12 KM68257CLJ-15 KM68257CLP-20 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
Part No. KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 KM68257CL-15 KM68257CL-20 KM68257CLJ-12 KM68257CLJ-15 KM68257CLP-20 KM68257CLTG-12 KM68257CLTG-15 KM68257CLTG-20 KM68257CP-15 KM68257CTG-15 KM68257CTG-20 KM68257C-15 KM68257C-20 KM68257CLP-15 KM68257CP-20 KM68257CTG-12 KM68257CJ-15 KM68257CLJ-20 KM68257CLP-12 KM68257CP-12 KM68257C SAMSUNGSEMICONDUCTORCO.LTD.-KM68257CL-12
Description 32Kx8 bit high speed static RAM (5V operating), 20ns
32Kx8 bit high speed static RAM (5V operating), 15ns
32Kx8 bit high speed static RAM (5V operating), 12ns
32Kx8 Bit high Speed Static RAM(5V operating(, Evolutionary Pin out. Operated at Commercial temperature Range. 32Kx8位高速静态RAM5V的工作(,进化引脚了。在商业温度范围工作

File Size 190.63K  /  10 Page

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    NV23K07 NV23KQASDC10V NV23KASDC10V NV23KASDC12V NV23KQCSDC10V NV23KQCSDC12V NV23KQCSSDC10V NV23KQCSSDC12V NV23KASSDC10V

DB Lectro Inc
Part No. NV23K07 NV23KQASDC10V NV23KASDC10V NV23KASDC12V NV23KQCSDC10V NV23KQCSDC12V NV23KQCSSDC10V NV23KQCSSDC12V NV23KASSDC10V NV23KCSDC10V NV23KQASSDC10V NV23KCSSDC10V NV23KAZSDC10V NV23KQAZSDC10V NV23KCZSDC10V NV23KQCZSDC10V NV23KCSDC12V NV23KCZSDC12V NV23KQCZSDC12V NV23KCZDC10V NV23KCZDC12V NV23KASSDC12V NV23KCSSDC12V NV23KQASSDC12V NV23KAZSDC12V NV23KQAZSDC12V NV23KQASDC12V NV23KQCZDC10V NV23KQCZDC12V NV23KQAZDC12V NV23KAZDC12V NV23KQAZDC10V NV23KAZDC10V
Description Withstands high temperature, operating under 105 ambient temperature

File Size 387.87K  /  2 Page

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    NV23107 NV2312CSDC10VN NV2312CSDC10VS NV2312ASDC10VN NV2312ASDC10VS NV2312CZDC10VN NV2312CZDC10VS NV2312CZDC12VN NV2312C

DB Lectro Inc
Part No. NV23107 NV2312CSDC10VN NV2312CSDC10VS NV2312ASDC10VN NV2312ASDC10VS NV2312CZDC10VN NV2312CZDC10VS NV2312CZDC12VN NV2312CZDC12VS NV2312CSDC12VN NV2312CSDC12VS NV2312CZSDC10VN NV2312CZSDC10VS NV2312CZSDC12VN NV2312CZSDC12VS NV2312ASSDC10VN NV2312CSSDC10VN NV2312ASSDC10VS NV2312CSSDC10VS NV2312ASSDC12VN NV2312ASDC12VN NV2312ASDC12VS NV2312ASSDC12VS NV2312AZDC10VN NV2312AZDC10VS NV2312AZSDC10VN NV2312AZSDC10VS NV2312AZSDC12VN NV2312AZDC12VN NV2312AZDC12VS NV2312AZSDC12VS NV2312CSSDC12VN NV2312CSSDC12VS
Description Withstands high temperature, operating under 105 ambient temperature

File Size 384.31K  /  2 Page

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    NV2RZDC12V0.64 NV2RZDC12V0.93 NV2R NV2RSDC12V0.93 NV2RSDC12V0.64

DB Lectro Inc.
Part No. NV2RZDC12V0.64 NV2RZDC12V0.93 NV2R NV2RSDC12V0.93 NV2RSDC12V0.64
Description Withstands high temperature, operating under 105 ambient temperature

File Size 459.82K  /  2 Page

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    BR25H020-W BR25H020-WE2 BR25H010F-WE2 BR25H010FJ-WE2 BR25H020F-WE2 BR25H040F-WE2 BR25H040FJ-WE2 BR25H080-WE2 BR25H080F-W

Rohm
Part No. BR25H020-W BR25H020-WE2 BR25H010F-WE2 BR25H010FJ-WE2 BR25H020F-WE2 BR25H040F-WE2 BR25H040FJ-WE2 BR25H080-WE2 BR25H080F-WE2 BR25H080FJ-WE2 BR25H160-W BR25H160-WE2 BR25H160F-W BR25H160F-WE2 BR25H160FJ-W BR25H160FJ-WE2 BR25H010-WE2 BR25H040-WE2 BR25H320-WE2 BR25H020FJ-WE2 BR25H320FJ-WE2 BR25H320F-W BR25H320-W BR25H320FJ-W BR25H320F-WE2 BR25H040-W BR25H010-W
Description high GRADE Specification high RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V operating temperature -40∑C ~ 125∑C type
high GRADE Specification high RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V operating temperature -40°C ~ 125°C type
high GRADE Specification high RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V operating temperature -40掳C ~ 125掳C type
high GRADE Specification high RELIABILITY series SPI BUS Serial EEPROMs Supply voltage 2.5V~5.5V operating temperature -40隆?C ~ 125隆?C type

File Size 1,148.66K  /  17 Page

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    KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM68257EI-10 KM68257EI-12 KM68257EI-15 KM68257ETGI-10 KM68257ETGI-12 KM6825

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM68257EI-10 KM68257EI-12 KM68257EI-15 KM68257ETGI-10 KM68257ETGI-12 KM68257ETG-15
Description 32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit high-Speed CMOS Static RAM(5V operating) Operated at Commercial and Industrial temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作),在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns

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    K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R1016C1D-JTCI10/12 K6R1008C1D-JTCI10/12 K6R1008V1D-JTCI08/10 K6R1004C1D-JC

Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R1016C1D-JTCI10/12 K6R1008C1D-JTCI10/12 K6R1008V1D-JTCI08/10 K6R1004C1D-JCI10/12 K6R1004V1D-JCI08/10 K6R1016V1D-JECI08/10 K6R1008V1D-JTCI08 K6R1008C1D-JTCI12 K6R1008V1D-JTCI10 K6R1008C1D-JTCI10 K6R1004C1D-JCI12 K6R1004C1D-JCI10 K6R1004V1D-JCI10 K6R1004V1D-JCI08
Description 64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
128K x 8 Bit high-Speed CMOS Static RAM(3.3V operating) Data Sheet
64Kx16 Bit high-Speed CMOS Static RAM(3.3V operating) Operated at Commercial and Industrial temperature Ranges. 在商业和工业温度范围运作64Kx16位高速CMOS静态RAM3.3V的)
64Kx16 Bit high-Speed CMOS Static RAM(3.3V operating) Operated at Commercial and Industrial temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的)在商业和工业温度范围操作

File Size 176.15K  /  9 Page

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    Panasonic
Part No. DN6847TE
Description Hall IC(operating temperature Range Topr = - 40 to -100C, operating in Alternative Magnetic Field)

File Size 43.94K  /  3 Page

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