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  gium nitride gan Datasheet PDF File

For gium nitride gan Found Datasheets File :: 49+       Page :: | 1 | 2 | 3 | 4 | <5> |   

    M/A-COM Technology Solution...
Part No. NPT35050A
Description Gallium nitride 28V, 65W RF Power Transistor

File Size 664.23K  /  10 Page

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    CREE POWER
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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    Microsemi
Part No. AML618L4011
Description Gallium nitride (gan)

File Size 315.69K  /  1 Page

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    Microsemi
Part No. AML1416P4511
Description Gallium nitride (gan)

File Size 346.18K  /  1 Page

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    Microsemi
Part No. AML811P5011
Description Gallium nitride (gan)

File Size 422.12K  /  1 Page

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    Microsemi
Part No. AML811P5012
Description Gallium nitride (gan)

File Size 422.15K  /  1 Page

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    Microsemi
Part No. AML056P4511
Description Gallium nitride (gan)

File Size 428.38K  /  1 Page

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    Microsemi
Part No. AML59P4512
Description Gallium nitride (gan)

File Size 540.93K  /  1 Page

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    M/A-COM Technology Solu...
Part No. 9110R-9129R 91100-91199 9130R-9149R
Description The 91 Series of chip capacitors features silicon nitride/silicon dioxide dielectric layers for high reliability and stable capacitance over time.

File Size 492.33K  /  3 Page

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