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  gate bipolar transistor silico Datasheet PDF File

For gate bipolar transistor silico Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CT90AM-18
Description Integrated gate bipolar transistor (IGBT) Modules: 250V
INSULATED gate bipolar transistor

File Size 22.58K  /  2 Page

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    IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15

International Rectifier
Part No. IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15
Description INSULATED gate bipolar transistor
INSULATED gate bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 329.22K  /  11 Page

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    IRG4BC29K IRG4BC30K IRG4BC30

IRF[International Rectifier]
Part No. IRG4BC29K IRG4BC30K IRG4BC30
Description 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED gate bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED gate bipolar transistor(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

File Size 135.84K  /  8 Page

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    IRG4PH40K

IRF[International Rectifier]
Part No. IRG4PH40K
Description 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED gate bipolar transistor(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED gate bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 154.31K  /  8 Page

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    CT30SM-12 CT30SM-1

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CT30SM-12 CT30SM-1
Description MITSUBISHI INSULATED gate bipolar transistor GENERAL INVERTER UPS USE
Integrated gate bipolar transistor (IGBT) Modules: 250V
GENERAL INVERTER . UPS USE

File Size 35.85K  /  3 Page

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    IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15

International Rectifier
Part No. IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15
Description INSULATED gate bipolar transistor
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
   INSULATED gate bipolar transistor

File Size 647.10K  /  10 Page

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    IRG4PC50S IRG4PC50SPBF

IRF[International Rectifier]
Part No. IRG4PC50S IRG4PC50SPBF
Description 600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED gate bipolar TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A)
INSULATED gate bipolar transistor

File Size 161.26K  /  8 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. GT40G121
Description Insulated gate bipolar transistor silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated gate bipolar transistor silicon N Channel IGBT

File Size 139.45K  /  5 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4BC40K
Description Insulated gate bipolar transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管)
INSULATED gate bipolar transistor(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package

File Size 153.75K  /  8 Page

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    ONSEMI[ON Semiconductor]
Part No. MGW12N120
Description Insulated gate bipolar transistor N-Channel
Insulated gate bipolar transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE

File Size 133.06K  /  5 Page

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For gate bipolar transistor silico Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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