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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
CT90AM-18
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Description |
Integrated gate bipolar transistor (IGBT) Modules: 250V INSULATED gate bipolar transistor
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File Size |
22.58K /
2 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT40G121
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Description |
Insulated gate bipolar transistor silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications TOSHIBA Insulated gate bipolar transistor silicon N Channel IGBT
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File Size |
139.45K /
5 Page |
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it Online |
Download Datasheet |
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International Rectifier, Corp. IRF[International Rectifier]
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Part No. |
IRG4BC40K
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Description |
Insulated gate bipolar transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED gate bipolar transistor(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
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File Size |
153.75K /
8 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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Part No. |
MGW12N120
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Description |
Insulated gate bipolar transistor N-Channel Insulated gate bipolar transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
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File Size |
133.06K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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