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For gain Found Datasheets File :: 105177    Search Time::2.687ms    
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    AE427

RFHIC
Part No. AE427
OCR Text ...ation ? small size ? higher gain ? higher linearity ? sot89 smd type package ? higher productivity ? lower manufacturing cost ? -55dbc cso 135 channels @ +30dbmv/ch ? -70dbc ctb 135 channels @ +30dbmv/ch ? -67dbc xmd 135 channels...
Description E-pHEMT MMIC

File Size 191.73K  /  3 Page

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    SM7985-43

Stealth Microwave, Inc.
Part No. SM7985-43
OCR Text ...t point (oip3) +54 dbm linear gain 58 db 1 db gain flatness (over full band) .75 db gain change (over temperature) .5 db input/output return loss -16 db / -16db dc input voltage +12 volts dc input current 9.2 amperes (op...
Description 7900-8500 MHz 20 Watt Linear Power Amplifier

File Size 112.16K  /  2 Page

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    HMC715LP3

Hittite Microwave Corporation
Part No. HMC715LP3
OCR Text ...9 db noise fgure, 19 db gain and +33 dbm output ip 3 from a single supply of +5v. i nput and output return losses are excellent and the l na requires minimal external matching and bias decoupling compo...
Description GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz

File Size 428.26K  /  10 Page

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    TriQuint Semiconductor, Inc.
Part No. TGA2521-SM-T/R
OCR Text ... psat, 23.5 dbm nominal p1db ? gain: 20 db ? otoi: 33 dbm typical ? bias: vd = 5 v, idq = 320 ma, vg = -0.5 v typical ? package dimensions: 4 x 4 x 0.85 mm ? point-to-point radio ? point-to-multipoint communications the triquint tga2521-...
Description
File Size 925.40K  /  19 Page

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    Agilent (Hewlett-Packard)
Part No. AMMC-5040
OCR Text gain broadband amplifier designed for both military applications and commercial communication systems. this four-stage amplifier has input and output matching circuitry for use in 50 ohm environments. it is fabricated using phemt integrated...
Description AMMC-5040 · 20-40 GHz GaAs Amplifier

File Size 198.73K  /  11 Page

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    2SB647 2SB647A

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SB647 2SB647A
OCR Text ...voltage Base to emitter voltage gain bandwidth product VCE(sat) VBE fT 1 2SB647A Max Min -- -- -- -10 320 -- -1 Typ Max Unit Test conditions -- -- -- -10 200 -- -1 V V V V A I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VC...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 32.10K  /  6 Page

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    2SB649 2SB649A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SB649 2SB649A
OCR Text ... Base to emitter voltage VBE gain bandwidth product f T Collector output capacitance Cob Notes: 1. The 2SB649 and 2SB649A are grouped by h FE1 as follows. 2. Pulse test B 2SB649 2SB649A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 16...
Description Silicon PNP Epitaxial

File Size 34.81K  /  8 Page

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    2SB715 2SB716 2SB716A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SB715 2SB716 2SB716A
OCR Text ...2 -- -- -- -- -- VCE(sat) gain bandwidth product fT Collector output capacitance Cob MHz VCE = -12 V, IC = -5 mA pF VCB = -25 V, I E = 0, f = 1 MHz Note: 1. The 2SB715, 2SB716 and 2SB716A are grouped by h FE1 as follows. D E ...
Description Silicon PNP Epitaxial 硅外延进步党
Silicon PNP Transistor

File Size 31.71K  /  6 Page

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