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    MRF6S21100NBR1 MRF6S21100NR1 MRF6S21100NR108

Freescale Semiconductor, Inc
Part No. MRF6S21100NBR1 MRF6S21100NR1 MRF6S21100NR108
OCR Text ....01% probability on ccdf. power gain 14.5 db drain efficiency 25.5% im3 @ 10 mhz offset -37 dbc in 3.84 mhz bandwidth acpr @ 5 mhz offset -40 dbc in 3.84 mhz bandwidth ? capable of handling 5:1 vswr, @ 28 vdc, 2140 mhz, 100 wa...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 927.41K  /  20 Page

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    PHL516-10

Tyco Electronics
Part No. PHL516-10
OCR Text ... t13mn, dc forward current gain h fe 15 120 - v,,=5 v, i,=1 a power gain gp 10 - db v,,=25 v, i,,=100 ma, pout=1 0 w, f=l.50 - 1.60 ghz collector eff iciency % 40 - % v,,=25 v, i,,=100 ma, p,*lo w...
Description Wireless Bipolar Power Transistor, 1OW 1.45 - 1.60 GHz

File Size 256.72K  /  4 Page

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    PanJit International Inc.
Part No. MMBTH10-T/R7
OCR Text ....com guaranteed minimum current gain-bandwidth product of 650 mhz industry standard sot-23 package sot-23 t = 25c collector-base voltage v cb0 v 30 j thermal characteristics characteristic symbol value units 225 -55 to 150 -55 to 150 mw c...
Description NPN HIGH FREQUENCY TRANSISTOR

File Size 122.58K  /  3 Page

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    Korea Electronics (KEC)
Part No. MJE13003
OCR Text ...v, i c =0 - - 10 a dc current gain h fe (1) v ce =2v, i c =0.5a 8 - 40 h fe (2) v ce =2v, i c =1a 5 - 25 collector-emitter saturation voltage v ce(sat) i c =0.5a, i b =0.1a - - 0.5 v i c =1a, i b =0.25a - - 1 i c =1.5a, i b =0....
Description Switching Transistor

File Size 392.75K  /  2 Page

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    2SA1190 2SA1191

HITACHI[Hitachi Semiconductor]
Part No. 2SA1190 2SA1191
OCR Text ...5 -1.0 -- -- 1.5 V MHz pF dB gain bandwidth product f T Collector output capacitance Noise figure Cob NF VCE = -6 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz VCE = -6 V, I C = -0.1 mA, Rg = 10 k f = 1 kHz VCE = -6 V, I C = -0.1 mA,...
Description Silicon PNP Epitaxial

File Size 44.42K  /  10 Page

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    2N2219AHR

STMicroelectronics
Part No. 2N2219AHR
OCR Text ... npn bipolar transistor linear gain characteristics escc qualified european preferred part list - eppl radiation level: lot specific total dose contact marketing for specified level description the 2n2219ahr is a silicon planar epitaxi...
Description Hi-Rel NPN bipolar transistor

File Size 179.56K  /  9 Page

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    WL2205-L

RFHIC
Part No. WL2205-L
OCR Text ...ng frequency mhz 30 - 2200 - gain db 13 15.5 - - gain flatness db - 1.2 1.5 30 ~ 2200mhz input return loss db - -15 - - output return loss db - -20 - - 1db compression point dbm 13 17 - 30 ~ 2200mhz output ip3 ...
Description Wideband LNA

File Size 223.76K  /  4 Page

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