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For gain Found Datasheets File :: 104601 Search Time::1.578ms
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				Sanyo Semicon Device
Part No.	C5611
OCR Text	...tter voltage, v be ? dc current gain, h fe collector current, i c ? dc current gain, h fe collector current, i c ? 2sa2023 v ce =--2v r e t e m a r a pl o b m y ss n o i t i d n o c s g n i t a r t i n u n i mp y tx a m e g a t l o v n w o ...
Description	Search --To 2SC5611
File Size	71.98K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	C5086
OCR Text	... ? low noise figure, high gain. ? nf = 1.1db, \|s 21e \| 2 = 11db (f = 1 ghz) absolute maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 12 ...
Description	Search --To 2SC5086
File Size	1,029.19K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD467
OCR Text	...voltage Base to emitter voltage gain bandwidth product Collector output capacitance Note: B 85 to170 C 120 to 240 V(BR)EBO I CBO hFE* 85 -- -- -- -- VCE(sat) VBE fT Cob V V MHz pF I C = 0.5 A, IB = 0.05 A (Pulse test) VCE = 1 V,...
Description	Silicon NPN Epitaxial
File Size	29.20K / 6 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SD468
OCR Text	...voltage Base to emitter voltage gain bandwidth product Collector output capacitance V(BR)EBO I CBO hFE* 85 -- -- -- -- VCE(sat) VBE fT Cob V V MHz pF Notes: 1. The 2SD468 is grouped by h FE as follows. 2. Pulse test B 85 to170 C...
Description	Silicon NPN Transistor Silicon NPN Epitaxial
File Size	29.49K / 6 Page	View it Online	Download Datasheet

				NEC
Part No.	C3622
OCR Text	...0 v, i c = 0 100 na dc current gain h fe1 v ce = 5.0 v, i c = 1.0 ma 1000 1800 3200 ? dc current gain h fe2 v ce = 5.0 v, i c = 100 ma 200 350 dc base voltage v be *v ce = 5.0 v, i c = 1.0 ma 560 mv collector saturation voltage ...
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File Size	133.42K / 6 Page	View it Online	Download Datasheet

				Hitachi,Ltd. Hitachi Semiconductor
Part No.	2SD655
OCR Text	...ltage DC current transfer ratio gain bandwidth product V(BR)EBO I CBO VBE VCE(sat) hFE*1 fT Notes: 1. The 2SD655 is grouped by h FE as follows. 2. Pulse test D 250 to 500 E 400 to 800 F 600 to 1200 2 2SD655 Typical Output Characte...
Description	Silicon NPN Epitaxial npn型硅外延
File Size	28.39K / 6 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SD667 2SD667A
OCR Text	... Base to emitter voltage VBE gain bandwidth product f T Collector output capacitance Cob Notes: 1. The 2SD667 and 2SD667A are grouped by h FE1 as follows. 2. Pulse test B 2SD667 2SD667A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 16...
Description	Silicon NPN Epitaxial npn型硅外延 Silicon NPN Transistor
File Size	31.22K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SD669 2SD669A SD669
OCR Text	... Base to emitter voltage VBE gain bandwidth product f T Collector output capacitance Cob Notes: 1. The 2SD669 and 2SD669A are grouped by h FE1 as follows. 2. Pulse test. B 2SD669 2SD669A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 1...
Description	Silicon NPN Epitaxial
File Size	35.10K / 7 Page	View it Online	Download Datasheet

For gain Found Datasheets File :: 104601 Search Time::1.578ms
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