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ISP1048E LAN8700 MSX40 2001170 BC847B TLVH4201 L5235 043045
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    2SA2057

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2057
OCR Text ...age VCE(sat) * Superior forward current transfer ratio hFE linearity * TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 15.00.5 9.90.3 4.60.2 2.90.2 3.20.1 13.70.2 4.20.2 Solder Dip 1.40.2 1.60.2 0...
Description Silicon PNP epitaxial planar type

File Size 72.39K  /  3 Page

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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...obe Applications * * * High DC current gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 194.32K  /  5 Page

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ...obe Applications * * * High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics...
Description SILICON PNP EPITAXIAL TYPE

File Size 181.01K  /  5 Page

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...obe Applications * * * High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics ...
Description Silicon PNP Epitaxial Type

File Size 167.29K  /  5 Page

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    2SA2062 2SC5774

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2062 2SC5774
OCR Text ...0W Output Applications Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Specifications Note*( ) : 2SA2062 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Col...
Description 140V / 10A, AF70W Output Applications

File Size 34.06K  /  4 Page

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    2SA2064

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2064
OCR Text ...age VCE(sat) * Superior forward current transfer ratio hFE linearity * TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 15.00.5 9.90.3 4.60.2 2.90.2 3.20.1 13.70.2 4.20.2 Solder Dip 1.40.2 1.60.2 0...
Description Silicon PNP epitaxial planar type

File Size 70.35K  /  3 Page

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    2SA2067

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2067
OCR Text ...age VCE(sat) * Superior forward current transfer ratio hFE linearity * Allowing automatic insertion eith radial taping 2.50.1 Features 13.00.2 1.20.1 1.480.2 90 Power supply for audio & visual equipments such as TVs and V...
Description Silicon PNP epitaxial planar type

File Size 66.39K  /  3 Page

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...ter Applications * * * High DC current gain: hFE = 200 to 500 (IC = -0.15 A) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V (max) High-speed switching: tf = 37 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristic...
Description High-Speed Switching Applications DC-DC Converter Applications

File Size 194.91K  /  5 Page

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2070
OCR Text ...ter Applications * * * High DC current gain: hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 131.46K  /  5 Page

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    2SA2071

ROHM[Rohm]
Part No. 2SA2071
OCR Text ... Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits -60 -60 -6 -3 -6 500 2.0 150 -55~+150 Unit V V V A A 1 mW W 2 C C 1 Pw=100ms 2 Mou...
Description Power transistor (-60V, -3A)
Power transistor (−60V −3A)
Power transistor (−60V, −3A)

File Size 42.30K  /  4 Page

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