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FDZ206P 16EE19 F18008 3P80C5 C37ECAX 20121 1A220 DX730
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    MRF8S9170NR3

Freescale Semiconductor, Inc
Part No. MRF8S9170NR3
OCR Text ... 920 to 960 MHz. Can be used in class AB and class C for all typical cellular base station modulation formats. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Chan...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 261.81K  /  13 Page

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    MicroPower Direct
Part No. A501RW A554RW A505RW
OCR Text class ?a? ? compact dip case ? single & dual outputs ? 1.0 mh mtbf ? industry standard pin-out a500rw wide input range, 5w single & dual output dc/dc con vert ers series input parameter conditions min. typ. max. units input start voltage ...
Description 5W Single & Dual Output DC/DC Converters

File Size 199.09K  /  2 Page

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    Tumbler Technologies TRUMPower
Tumbler Technologies ...
Part No. TMP92-18 TMP92-12-2R TMP92-18-2R TMP92-19 TMP92-24-2R TMP92-19-2R
OCR Text ............................. (for class i models only) touch current ...................... 40a max. @ 264 vac, 63hz ............................................. (for class i and class ii models) no load power .................... 0.21w typ...
Description 90 Watts Medical Grade Power Adapters
   90 Watts Medical Grade Power Adapters

File Size 158.05K  /  2 Page

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    MICROSEMI CORP-SCOTTSDALE
Part No. MSPPLAD30KP26CAE3TR MSPPLAD30KP24C
OCR Text ...lightning per iec61000-4-5 and class levels with various source impedances described herein. this series is available in 10 to 400 volt standoff voltages (v wm ) in both unidirectional and bi-directional with either 5% or 10% tolerance...
Description 30000 W, BIDIRECTIONAL, SILICON, TVS DIODE

File Size 239.67K  /  5 Page

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    MRF8S9100HR3 MRF8S9100HSR3

Freescale Semiconductor, Inc
Part No. MRF8S9100HR3 MRF8S9100HSR3
OCR Text ... 865 to 960 MHz. Can be used in class AB and class C for all typical cellular base station modulation formats. * Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 19.3 19.3...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 291.98K  /  14 Page

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    MRF8S7170N MRF8S7170NR3

Freescale Semiconductor, Inc
Part No. MRF8S7170N MRF8S7170NR3
OCR Text ... 728 to 768 MHz. Can be used in class AB and class C for all typical cellular base station modulation formats. * Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel ...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 334.32K  /  13 Page

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    MRF8S21200HR6 MRF8S21200HSR6

Freescale Semiconductor, Inc
Part No. MRF8S21200HR6 MRF8S21200HSR6
OCR Text ...110 to 2170 MHz. Can be used in class AB and class C for all typical cellular base station modulation formats. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 48 Watts Avg., IQ Magnitude Clipping, Chan...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 302.11K  /  14 Page

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