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For carbide Found Datasheets File :: 530    Search Time::1.266ms    
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    DIAMOND SA
Part No. 241-000-004L999
OCR Text ...pc) ferrule: ? 2.5 mm tungsten carbide with copper-nickel alloy insert, spring loaded (10 n), anti-rotation keyed, with air pressure relief guides mating adapter: tungsten carbide in inox housing external parts: inox, 1/4"-36 uns sma threa...
Description 50/125 um, MULTI MODE, SIMPLEX SMA CONNECTOR

File Size 71.21K  /  2 Page

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    SHDC62611209

Sensitron
Part No. SHDC62611209
OCR Text ...185, rev. b hermetic silicon carbide rectifier description: a 1200-volt, 20 amp power silico n carbide rectifier in a ceramic hermetic to-257 package (glass seals not available for this voltage) features: ? no recovery time...
Description HERMETIC SILICON carbide RECTIFIER

File Size 51.92K  /  4 Page

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    IDH04G65C512

Infineon Technologies AG
Part No. IDH04G65C512
OCR Text carbide diode final datasheet rev. 2.2, 2012-12-10 5 th generation thinq! tm 650v sic schottky diode idh04g65c5 1) j-std20 and jesd22 2) all devices tested under avalanche conditions for a time periode of 10ms fi...
Description ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

File Size 1,158.18K  /  13 Page

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    IDW40G65C512

Infineon Technologies AG
Part No. IDW40G65C512
OCR Text carbide diode final datasheet rev. 2.2, 2013-01-15 5 th generation thinq! tm 650v sic schottky diode idw40g65c5 1) j-std20 and jesd22 2) all devices tested under avalanche conditions for a time periode of 10ms ...
Description ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

File Size 1,175.95K  /  11 Page

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    IDW20G65C512

Infineon Technologies AG
Part No. IDW20G65C512
OCR Text carbide diode final datasheet rev. 2.2, 2013-01-15 5 th generation thinq! tm 650v sic schottky diode idw20g65c5 1) j-std20 and jesd22 2) all devices tested under avalanche conditions for a time periode of 10ms ...
Description ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

File Size 1,174.43K  /  11 Page

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    IDW16G65C512

Infineon Technologies AG
Part No. IDW16G65C512
OCR Text carbide diode final datasheet rev. 2.2, 2013-01-15 5 th generation thinq! tm 650v sic schottky diode idw16g65c5 1) j-std20 and jesd22 2) all devices tested under avalanche conditions for a time periode of 10ms ...
Description ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

File Size 1,174.63K  /  11 Page

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    IDW12G65C512

Infineon Technologies AG
Part No. IDW12G65C512
OCR Text carbide diode final datasheet rev. 2.2, 2013-01-15 5 th generation thinq! tm 650v sic schottky diode idw12g65c5 1) j-std20 and jesd22 2) all devices tested under avalanche conditions for a time periode of 10ms ...
Description ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

File Size 1,174.74K  /  11 Page

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    IDW10G65C512

Infineon Technologies AG
Part No. IDW10G65C512
OCR Text carbide diode final datasheet rev. 2.2, 2013-01-15 5 th generation thinq! tm 650v sic schottky diode idw10g65c5 1) j-std20 and jesd22 2) all devices tested under avalanche conditions for a time periode of 10ms ...
Description ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

File Size 1,174.82K  /  11 Page

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    IDH06G65C512

Infineon Technologies AG
Part No. IDH06G65C512
OCR Text carbide diode final datasheet rev. 2.2, 2012-12-10 5 th generation thinq! tm 650v sic schottky diode idh06g65c5 1) j-std20 and jesd22 2) all devices tested under avalanche conditions for a time periode of 10ms ...
Description ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

File Size 1,173.95K  /  11 Page

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    SHD617052BN SHD617052AN SHD617052AP SHD617052BP SHD617052N SHD617052P

Sensitron Semiconductor
Part No. SHD617052BN SHD617052AN SHD617052AP SHD617052BP SHD617052N SHD617052P
OCR Text ...D617052BP/N HERMETIC SILICON carbide RECTIFIER DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON carbide RECTIFIER IN A CERAMIC HERMETIC SHD-4 PACKAGE FEATURES: * NO RECOVERY TIME OR REVERSE RECOVERY LOSSES * NO TEMPERATURE INFLUENCE ON SW...
Description HERMETIC SILICON carbide RECTIFIER 5 A, SILICON carbide, RECTIFIER DIODE

File Size 288.77K  /  4 Page

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For carbide Found Datasheets File :: 530    Search Time::1.266ms    
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