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    NX6240GP

Renesas Electronics Corporation
Part No. NX6240GP
OCR Text ... use by the military, including but not limited to the development of weapons of mass destruction. renesas electronics products and technology may not be used for or incorporate d into any products or systems whose manufacture, use, or sa...
Description LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION

File Size 187.80K  /  7 Page

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    NR3314TU

Renesas Electronics Corporation
Part No. NR3314TU
OCR Text ...use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated into any products or systems whose manufacture, us e, o...
Description InGaAs PIN-PD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS

File Size 226.15K  /  10 Page

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    ACT-SF512K32N-26P5C ACT-SF512K32N-26P5M ACT-SF512K32N-39P5M ACT-SF512K32N-39P5Q ACT-SF512K32N-39P5T

Aeroflex Circuit Technology
Part No. ACT-SF512K32N-26P5C ACT-SF512K32N-26P5M ACT-SF512K32N-39P5M ACT-SF512K32N-39P5Q ACT-SF512K32N-39P5T
OCR Text ...rameter is guaranteed by design but not tested dc characteristics (v c c = 5.0v, v s s = 0v, t c = -55c to +125c) parameter sym conditions min max units input leakage current i li v cc = max, v in =0tov cc 10 a output leakage curre...
Description ACT-SF512K32 High Speed 512Kx32 SRAM / 512Kx32 Flash Multichip Module

File Size 182.43K  /  11 Page

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Part No. UPC2711TB
OCR Text ...use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated into any products or systems whose manufacture, us e, o...
Description 2900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

File Size 225.09K  /  18 Page

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Renesas Electronics Corporation
Part No. NE55410GR-T3-AZ
OCR Text ...use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated into any products or systems whose manufacture, us e, o...
Description 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER

File Size 307.65K  /  15 Page

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    FREESCALE SEMICONDUCTOR INC
Part No. MCZ33291EGR2
OCR Text ...d for automotive applications, but is well suited for other environments. the 33291 incorporates smartmos te chnology, with cmos logic, bipolar/mos analog circuitry, and dmos power mosfets. the 33291 interfaces directly with a microcont...
Description 1 A BUF OR INV BASED PRPHL DRVR, PDSO24

File Size 386.00K  /  26 Page

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    DS2505 DS2505P DS2505PT DS2505PTR DS2505T DS2505TR

MAXIM - Dallas Semiconductor
Dallas Semiconducotr
DALLAS[Dallas Semiconductor]
Part No. DS2505 DS2505P DS2505PT DS2505PTR DS2505T DS2505TR
OCR Text ...ith new data being appended to, but not overwriting, existing data with each subsequent programming of the device. Note: Individual bits can be changed only from a logical 1 to a logical 0, never from a logical 0 to a logical 1. A provision...
Description 16kb Add-Only Memory
16-kbit Add-Only Memory

File Size 523.32K  /  24 Page

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    Integrated Device Technology, Inc.
Part No. IDT74FCT16244T
OCR Text ...is measured at characterization but not tested. pin names description x oe 3-state output enable inputs (active low) x a x data inputs x y x 3-state outputs pin description note: 1. h = high voltage level x = don?t ...
Description 16-Bit Buffer/Line Driver

File Size 75.26K  /  6 Page

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