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04102 SF2143B XC6505 MCM63 LTC3604 2912C 2SB1700 MAX195
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    IDT79R3051 IDT79R3051-20 IDT79R3051-20J IDT79R3051-20MJ IDT79R3051-25 IDT79R3051-25J IDT79R3051-25MJ IDT79R3051-33 IDT79

IDT[Integrated Device Technology]
Part No. IDT79R3051 IDT79R3051-20 IDT79R3051-20J IDT79R3051-20MJ IDT79R3051-25 IDT79R3051-25J IDT79R3051-25MJ IDT79R3051-33 IDT79R3051-33J IDT79R3051-33MJ IDT79R3051-40 IDT79R3051-40J IDT79R3051-40MJ IDT79R3051E IDT79R3051E-20 IDT79R3051E-20J IDT79R3051E-20MJ IDT79R3051E-25 IDT79R3051E-25J IDT79R3051E-25MJ IDT79R3051E-33 IDT79R3051E-33J IDT79R3051E-33MJ IDT79R3051E-40 IDT79R3051E-40J IDT79R3051E-40MJ IDT79R3052 IDT79R3052-20 IDT79R3052-20J IDT79R3052-20MJ IDT79R3052-25 IDT79R3052-25J IDT79R3052-25MJ IDT79R3052-33 IDT79R3052-33J IDT79R3052-33MJ IDT79R3052-40 IDT79R3052-40J IDT79R3052-40MJ IDT79R3052E IDT79R3052E-20 IDT79R3052E-20J IDT79R3052E-20MJ IDT79R3052E-25 IDT79R3052E-25J IDT79R3052E-25MJ IDT79R3052E-33 IDT79R3052E-33J IDT79R3052E-33MJ IDT79R3052E-40 IDT79R3052E-40J IDT79R3052E-40MJ IDT79R305125MJ IDT79R3052E25MJ IDT79R305133MJ
OCR Text ... -- 4-deep read buffer supports burst refill from slow memory devices * * * * * * -- On-chip DMA arbiter -- Bus Interface minimizes design complexity Single clock input with 40%-60% duty cycle 35 MIPS, over 64,000 Dhrystones at 40MHz Low...
Description RISControllers

File Size 179.35K  /  23 Page

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    HYM71V32C755HCT4-8 HYM71V32C755HCT4-P HYM71V32C755HCT4-S

Hynix Semiconductor
Part No. HYM71V32C755HCT4-8 HYM71V32C755HCT4-P HYM71V32C755HCT4-S
OCR Text ...h cycles / 64ms ? programmable burst length and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 clocks ordering information part no. clock frequency inte...
Description SDRAM - Registered DIMM 256MB

File Size 232.55K  /  14 Page

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    HYM71V32C735HCT4-H HYM71V32C735HCT4-K HYM71V32C735HCT4

Fox Electronics
Hynix Semiconductor
Part No. HYM71V32C735HCT4-H HYM71V32C735HCT4-K HYM71V32C735HCT4
OCR Text ...h cycles / 64ms ? programmable burst length and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 clocks ordering information part no. clock frequency inte...
Description 32Mx72|3.3V|K/H|x18|SDR SDRAM - Registered DIMM 256MB 32Mx72 | 3.3 | | x18 | SDRAM的特别提款权-注册256MB的内

File Size 232.71K  /  14 Page

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    CYPRESS SEMICONDUCTOR CORP
Part No. MT58L128L32D1F-6
OCR Text ...rnally self-timed write cycle  burst control pin (interleaved or linear burst)  automatic power-down for portable applications  165-pin fbga package  100-pin tqfp package  low capacitive bus loading  x18, x32, and x36 versions availab...
Description 128K X 32 CACHE SRAM, 3.5 ns, PBGA165

File Size 437.01K  /  26 Page

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    HYM71V16M755HCLT6-8

Hynix Semiconductor
Part No. HYM71V16M755HCLT6-8
OCR Text ...h cycles / 64ms ? programmable burst length and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 clocks ordering information part no. clock frequency inte...
Description SDRAM - SO DIMM 128MB

File Size 98.58K  /  14 Page

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    M12L16161A M12L16161A-4.3T M12L16161A-5.5T M12L16161A-5T M12L16161A-6T M12L16161A-7T M12L16161A-8T

Elite Semiconductor Memory Technology Inc.
ETC
Part No. M12L16161A M12L16161A-4.3T M12L16161A-5.5T M12L16161A-5T M12L16161A-6T M12L16161A-7T M12L16161A-8T
OCR Text ...recise cycle control with the - burst Length (1, 2, 4, 8 & full page) use of system clock I/O transactions are possible - burst Type (Sequential & Interleave) on every clock cycle. Range of operating freAll inputs are sampled at the positiv...
Description 512K x 16Bit x 2Banks Synchronous DRAM

File Size 564.61K  /  27 Page

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    HYM71V16M655HCLT6-8 HYM71V16M655HCT6

Hitachi,Ltd.
Hynix Semiconductor
Part No. HYM71V16M655HCLT6-8 HYM71V16M655HCT6
OCR Text ...h cycles / 64ms ? programmable burst length and burst type - 1, 2, 4 or 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas latency ; 2, 3 clocks ordering information part no. clock frequency inte...
Description 16Mx65|3.3V|8/P/S|x8|SDR SDRAM - SO DIMM 128MB 16Mx65 | 3.3 | 8/P/S | x8 | SDRAM的特别提款权-28MB的内

File Size 242.30K  /  14 Page

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    M5M4V16G50DFP-10 M5M4V16G50DFP-12 M5M4V16G50DFP-8 16MSGRAMFP

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M4V16G50DFP-10 M5M4V16G50DFP-12 M5M4V16G50DFP-8 16MSGRAMFP
OCR Text ...(LVTTL: 2 and 3) - Programmable burst Length (1/2/4/8 and Full Page) - Programmable burst Type (Sequential / Interleave) - Byte control using DQM0 - DQM3 signals in both read and write cycles - Persistent Write-Per-Bit (WPB) function - 8 Co...
Description From old datasheet system
16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM

File Size 165.49K  /  33 Page

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    M5M4V4S40CTP-12 M5M4V4S40CTP-15 4MX16SDRAMTP

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M4V4S40CTP-12 M5M4V4S40CTP-15 4MX16SDRAMTP
OCR Text ...latency- 1/2/3 (programmable) - burst length- 1/2/4/8/FP (programmable) - Sequential and interleave burst (programmable) - Byte control by DQMU and DQML - Random column access - Auto precharge / All bank precharge controlled by A8 - Auto an...
Description 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM
From old datasheet system

File Size 1,456.01K  /  45 Page

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