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  800v 4.5a Datasheet PDF File

For 800v 4.5a Found Datasheets File :: 1830    Search Time::1.344ms    
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    2SC5003

SANKEN[Sanken electric]
Part No. 2SC5003
OCR Text ...ditions VCB=1200V VCB=1500V VCE=800v IEB=300mA VCE=5V, IC=1A VCE=5V, IC=5A IC=5A, IB=1.2A IC=5A, IB=1.2A IEC=7A VCE=12V, IE=-0.5A VCB=10V, f...4.4 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V)...
Description Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output/ Switching Regulator and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)

File Size 24.73K  /  1 Page

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    2SC5035

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5035
OCR Text ...fT ton tstg tf Conditions VCB = 800v, IE = 0 VEB = 5V, IC = 0 IC = 0.2A, L = 25mH VCE = 5V, IC = 0.1A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A I...4 3 2 1 0 IB=1200mA 1000mA 800mA 600mA 400mA 300mA 200mA 150mA 100mA 50mA 20mA 60 80 100 12...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 61.01K  /  3 Page

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    2SC5077 2SC5077A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5077 2SC5077A
OCR Text ...fT ton tstg tf Conditions VCB = 800v, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 4A IC ...4) Without heat sink (PC=2W) TC=25C 10 2SC5077, 2SC5077A IC -- VCE Collector to emitter saturat...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR

File Size 61.72K  /  3 Page

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    D2SB80

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. D2SB80
OCR Text 800v 1.5A FEATURES OUTLINE DIMENSIONS Case : 2S Unit : mm *oeSingle In-Line Package Thin *oe High IFSM *oe Applicable to Automatic ...4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D2SBx 4 3.5 Forward Power...
Description General Purpose Rectifiers(800v 1.5A)

File Size 130.46K  /  5 Page

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    G2SB20 G2SB60 G2SB80

VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
Part No. G2SB20 G2SB60 G2SB80
OCR Text ...20.7) Reverse Voltage 200 to 800v Forward Current 1.5A Features 0.421 (10.7) 0.411 (10.4) 0.080 (2.03) 0.060 (1.50) 0.095 (2.41) 0.080 (2.03) 0.098 (2.5) 0.075 (1.9) 0.043 (1.1) 0.035 (0.9) 0.210 (5.3) 0.190 (4.8) 0.040 (1.02) ...
Description Glass Passivated Single-Phase Bridge Rectifier, Forward Current 1.5A
Glass Passivated Single-Phase Bridge Rectifier 玻璃钝化单相桥式整流

File Size 20.93K  /  2 Page

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    MA2830

Shindengen Electric Manufacturing Company, Ltd.
Shindengen Electric Mfg.Co.Ltd
Part No. MA2830
OCR Text ...=0.6A, ,,IB Junction to Case VR=800v,+,IF=0.6A,-,+ IC=1.5A, IB=0.3A, +, - 1326 816 D1 Driving Saturation Voltage MAX 1.0 MAX...4 4 Standard Operating ConditionStandard Operating Characteristics Ta=25 Item Conditions Minimum...
Description IND, HIGH-POWER DENSITY, HIGH EFFICIENCY, SHIELDED
Power Switching Regulators

File Size 435.55K  /  7 Page

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    SGW25N120

INFINEON[Infineon Technologies AG]
Part No. SGW25N120
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 800v, VGE = +15V/0V, RG = 22) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 2...4. Collector current as a function of case temperature (VGE 15V, Tj 150C) Power Semiconductors ...
Description IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC

File Size 375.62K  /  11 Page

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    2SC4557

SANKEN[Sanken electric]
Part No. 2SC4557
OCR Text ... VBE(sat) fT COB Conditions VCB=800v VEB=7V IC=10mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=-1A VCB=10V, f=1MHz External Dime...4.4 5.450.1 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) ...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 24.62K  /  1 Page

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    APT8058HVR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8058HVR
OCR Text 800v 13.5A 0.580 POWER MOS V (R) TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This ...4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800v 13.5A 0.580 Ohm

File Size 60.35K  /  4 Page

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    APT8065 APT8065AVR

ADPOW[Advanced Power Technology]
Part No. APT8065 APT8065AVR
OCR Text 800v 11.5A 0.650 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new t...4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C...
Description POWER MOS V 800v 11.5A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.68K  /  4 Page

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