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  5a 1200v Datasheet PDF File

For 5a 1200v Found Datasheets File :: 650    Search Time::1.547ms    
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    APT35GP120JDF2

Advanced Power Technology
Part No. APT35GP120JDF2
OCR Text ...est <0.5 % duty cycle i c= 17.5a i c= 35a i c= 70a i c= 70a i c= 17.5a i c= 35a 80 70 60 50 40 30 20 10 0 120 100 80 60 40 20 0 6 5 4 3 2 1 0 1.2 1.15 1.1 1.05 1.0 0.95 0.90 0.85 0.8 01 23 45 012 3 4 5 0 1 2 3 4 5 6 7 8 9 10 0 20 40 ...
Description MOSFET

File Size 203.43K  /  9 Page

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    IHW15T120

Infineon Technologies AG
Part No. IHW15T120
OCR Text ...ent 0v 2v 4v 6v 8v 10v 12v 0a 5a 10a 15a 2 0a 2 5a 3 0a 3 5a 4 0a 25c t j =150c v ce(sat), collector - emitt saturation voltage -50c 0c 50c 100c 0,0v 0,5v 1,0v 1,5v 2,0v 2,5v 3,0v i c =15a i c =30a i c =8a i c =5a v ge , gate-emitte...
Description IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE diode

File Size 356.52K  /  15 Page

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ... = 25 0A I F = 1 25 A I F = 6 2.5a 100 T J = 125 C T J = 25C QRR - ( nC) 3.5 12000 8000 4000 10 1.0 1.5 2.0 2.5 3.0 0 500 1000 1500 2000 F o rw a rd V o lta g e D ro p - V F M (V ) d i f /d t - (A / s) ...
Description 1200v UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    Mitsubishi Electric Corporation
Part No. QM75DY-24
OCR Text ... open v eb =7v i c =75a, i b =1.5a Ci c =75a (diode forward voltage) i c =75a, v ce =5v v cc =600v, i c =75a, i b1 =Ci b2 =1.5a transistor part (per 1/2 module) diode part (per 1/2 module) conductive grease applied (per 1/2 module) typ. ...
Description MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 82.55K  /  5 Page

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    GA75TS120U GA75TS120UPBF

IRF[International Rectifier]
Part No. GA75TS120U GA75TS120UPBF
OCR Text ... C u rre n t - I F (A ) I F = 7 5a I F = 37 A 12000 100 Q R R - (nC ) TJ = 1 2 5 C TJ = 2 5 C 8000 4000 VR = 72 0 V T J = 12 5 C T J = 25 C 10 1.0 1.4 1.8 2.2 2.6 3.0 0 500 1000 F o rw a rd V o lta ge D ro p - V F...
Description    Ultra-FastTM Speed IGBT
1200v UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
75 A, 1200 V, N-CHANNEL IGBT

File Size 255.15K  /  10 Page

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    APT75GP120JDF3

Advanced Power Technology
Part No. APT75GP120JDF3
OCR Text ... <0.5 % duty cycle i c = 37.5a i c = 75a i c = 150a i c = 150a i c = 37.5a i c = 75a 050-7423 rev b 8-2004 apt75gp120jdf3 t j = 125c, v ge = 10v or 15v t j = 25c, v ge = 10v or 15v v ce = 600v r g = 5 ? ...
Description MOSFET

File Size 203.84K  /  9 Page

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    APT35GN120B

Advanced Power Technology
Part No. APT35GN120B
OCR Text ...c = 70a i c = 35a i c = 17.5a v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 70a i c = 35a i c = 17.5a 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 0 50 100 150 200 250 ...
Description MOSFET

File Size 180.06K  /  6 Page

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    APT25GP120BDF1

Advanced Power Technology
Part No. APT25GP120BDF1
OCR Text ... i c= 50a i c= 25a i c= 12.5a 60 50 40 30 20 10 0 16 14 12 10 8 6 4 2 0 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 100 90 80 70 60 50 40 30 20 10 0 i c= 12.5a i c= 25a i c= 50a 012345 012345 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 6 8 10 ...
Description MOSFET

File Size 191.38K  /  9 Page

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    HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL
OCR Text ...ion Voltage VCE(SAT) IC = 5a, VGE = 15V TC = 25oC TC = 150oC Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current S...1200v IC = 5a, VCE = 600V IC = 5a, VCE = 600V Current Turn-On Delay Time Current Rise Time Curren...
Description 3.3V 72-mc CPLD
21A/ 1200v/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200v, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

File Size 175.44K  /  8 Page

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    HGTP5N120BN HGT1S5N120BNS FN4599

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGTP5N120BN HGT1S5N120BNS FN4599
OCR Text ...ion Voltage VCE(SAT) IC = 5a, VGE = 15V TC = 25oC TC = 150oC Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current S...1200v IC = 5a, VCE = 0.5 BVCES IC = 5a, VCE = 0.5 BVCES VGE = 15V VGE = 20V Gate to Emitter Plate...
Description From old datasheet system
21A, 1200v, NPT Series N-Channel IGBTs(21A, 1200v NPT系列N沟道绝缘栅双极型晶体
21A/ 1200v/ NPT Series N-Channel IGBTs
XC9536-7VQ44I - NOT RECOMMENDED for NEW DESIGN 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

File Size 81.48K  /  7 Page

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