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  5 10-gf-762 Datasheet PDF File

For 5 10-gf-762 Found Datasheets File :: 8    Search Time::5.875ms    
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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0910A 0910A
OCR Text ...lifiers. OUTLINE DRAWING 17.5 1 Unit:millimeters FEATURES * Class A operation * High output power P1dB=38dBm(TYP) * High power g...10.0 RECOMMENDED BIAS CONDITIONS * VDS=10V * ID=1.3A * Rg=100 * Refer to Bias Procedure 1 GATE ...
Description MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system

File Size 25.38K  /  3 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0910A_1 MGF0910A MGF0910A1
OCR Text ...lifiers. OUTLINE DRAWING 17.5 1 Unit:millimeters FEATURES * Class A operation * High output power P1dB=38dBm(TYP) * High power g...10.0 RECOMMENDED BIAS CONDITIONS * VDS=10V * ID=1.3A * Rg=100 * Refer to Bias Procedure 1 GATE ...
Description L, S BAND POWER GaAs FET

File Size 176.99K  /  4 Page

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    MGF0805A

Mitsubishi Electric Semiconductor
Part No. MGF0805A
OCR Text ... * High output power : Po = 36.5 dBm (typ.) * High power added efficiency : add = 50 % (typ.) * Hermetic package * Designed for use in Clas...10 V * Ids = 400 mA * Rg = 100 Packaging Tape & Reel (1000 pcs) Absolute maximum ratings (Ta = 2...
Description L & S Band GaAs FET [ SMD non-matched ]

File Size 113.02K  /  8 Page

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    MRF6V14300HR3 MRF6V14300HSR3

Freescale Semiconductor, Inc
Part No. MRF6V14300HR3 MRF6V14300HSR3
OCR Text ...-- 18 dB Drain Efficiency -- 60.5% * Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak Power Features * Characterized with Se...10 - 65 to +150 150 200 Unit Vdc Vdc C C C Table 2. Thermal Characteristics Characteristic Therm...
Description RF Power Field Effect Transistors

File Size 398.32K  /  10 Page

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    MRF6V14300HSR3 MRF6V14300HR3

Freescale Semiconductor, Inc
Part No. MRF6V14300HSR3 MRF6V14300HR3
OCR Text ...-- 18 dB Drain Efficiency -- 60.5% * Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak Power Features * Characterized with Se...10 -- 65 to +150 150 225 Unit Vdc Vdc C C C Table 2. Thermal Characteristics Characteristic Ther...
Description RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

File Size 633.54K  /  10 Page

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    MGF0913A MGF0913A11

Mitsubishi Electric Semiconductor
Part No. MGF0913A MGF0913A11
OCR Text ...i gr reverse gate current -2.5 ma i gf forward gate current 5.4 ma p t total power dissipation 5.0 w tch cannel temperatu...10 15 20 25 30 35 0 5 10 15 20 25 pin(dbm) gp(db) ,po(dbm) 0 10 20 30 40 50 60 70 pae(%) vds=10v id...
Description High-power GaAs FET (small signal gain stage)

File Size 106.86K  /  4 Page

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    Digitron Semiconductors
Part No. MCR205 MCR202 MCR204 MCR201 MCR206
OCR Text ...nduction angles) i t(rms) 0.5 amp peak non-repetitive forward surge current (1/2 cycle, sine wave, 60hz) i tsm 6.0 amp circuit f...10 ma note 1: r gk current is not included in measurement. sales@digitroncorp.com fax +1.9...
Description SILICON CONTROLLED RECTIFIERS

File Size 870.16K  /  4 Page

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    MB140

Lite-On Technology Corporation
Part No. MB140
OCR Text ... V IR Rtjl Rttab Rtja 0.5 0.15 35 20 250 -55 to +125 -55 to +150 25 18 mA /W TJ TSTG REV. 0, 26-Dec-2001, KSH...10 TJ =125 1 1 I(av) , AVERAGE FORWARD CURRENT(A) 0.8 TJ =100 0.1 0.6 0.01 ...
Description SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

File Size 33.58K  /  2 Page

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