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68HC91 121M4 TFT1350 06100 K2673 18580357 103K00 L99H01XP
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  450 Datasheet PDF File

For 450 Found Datasheets File :: 507639    Search Time::20.234ms    
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    RB160MM-50-16

Rohm
Part No. RB160MM-50-16
OCR Text ...46 0.51 v reverse current i r - 4.0 30 m a parameter symbol conditions limits average forward rectified current i o 60hz half sin wave resistive load 1 - - 40 to + 150 unit duty Q0.5 50 direct reverse voltage 40 a glass epoxi mounted, non...
Description Schottky Barrier Diode

File Size 597.18K  /  9 Page

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    HYB3117400BJ-50 HYB3117400BJ-60 HYB3117400BJ-70 HYB3117400BT-50 HYB3117400BT-60 HYB3117400BT-70 HYB3116400BTL-70 HYB3116

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB3117400BJ-50 HYB3117400BJ-60 HYB3117400BJ-70 HYB3117400BT-50 HYB3117400BT-60 HYB3117400BT-70 HYB3116400BTL-70 HYB3116400BTL-60 HYB3116400BTL-50 HYB3116400BT-70 HYB3116400BT-60 HYB3116400BT-50 HYB3116400BJ-70 HYB3116400BJ-60 HYB3116400BJ-50 HYB316400B HYB3117400BTL-70 HYB3117400BTL-60 HYB3117400BTL-50 HYB3116400BJBTL-50- HYB316400BTL-50 HYB3116400BJBTL-50
OCR Text 4-Bit Dynamic RAM HYB3116400BJ/BT(L) -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70 Advanced Information * * * 4 194 304 words by 4-bit organization 0 to 70 C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access tim...
Description 4M x 4 Bit FPM DRAM 3.3 V 4k 50 ns
4M x 4 Bit FPM DRAM 3.3 V 4k 60 ns
-3.3V 4M x 4-Bit Dynamic RAM

File Size 251.00K  /  26 Page

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    HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 HYB5117805BSJ-50 HYB5117805-60 HYB5117805-50 HYB3117805-60 HYB3117805

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 HYB5117805BSJ-50 HYB5117805-60 HYB5117805-50 HYB3117805-60 HYB3117805-50 HB17805C Q67100-Q1104 HYB5117805BSJ-50-60
OCR Text ...03 VCC VSS N.C. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Semiconductor Group 2 1998-10-01 HYB 5(3)117805/BSJ-50/-60 2M x 8 EDO-DRAM I/O1 I/O2 I/O8 Data IN Buffer WE CAS 8 No.2 Clock Generator & Data OUT Buffer ...
Description 2M x 8 Bit 2k 5 V 60 ns EDO DRAM
2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO)
From old datasheet system

File Size 175.17K  /  23 Page

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    7MBR25VM120-50

Fuji Electric
Part No. 7MBR25VM120-50
OCR Text ... thermal resistance (1device) (*4) rth(c-f) with thermal compound - 0.05 - note *4: this is the value which is de?ned mounting on the additi...50 characteristics (representative) [ i n v e r t e r ] t j = 15 0 o c / c h i p c o ll e c t ...
Description IGBT MODULE

File Size 745.52K  /  8 Page

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    6MBI50VW-060-50

Fuji Electric
Part No. 6MBI50VW-060-50
OCR Text ... thermal resistance (1device) (*4) rth(c-f) with thermal compound - 0.05 - note *4: this is the value which is de?ned mounting on the additi...50 characteristics (representative) [ i n v e r t e r ] t j = 15 0 o c / c h i p c o ll e c t ...
Description IGBT MODULE

File Size 491.41K  /  6 Page

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    6MBI50VA-120-50

Fuji Electric
Part No. 6MBI50VA-120-50
OCR Text ... = 10v, v ge = 0v, f = 1mhz - 4.2 - nf turn-on time ton v cc = 6 00v i c = 50 a v ge = +15 / -15v r g = 15 ? - 0.39 1.20 s tr - 0.09 0.60 tr (i) - 0.03 - turn-off time toff - 0.53 1.00 tf - 0.06 0.30 forward on voltage v f ...
Description IGBT MODULE

File Size 570.33K  /  6 Page

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    2MBI300U4N-170-50

Fuji Electric
Part No. 2MBI300U4N-170-50
OCR Text ...ng (*3) - 3.5 n m terminals (*4) 4 .5 note *1: all terminals should be connected together when isolation test will be done. note *2: two...50 tf - 0.09 0.30 forward on voltage v f (terminal) v ge = 0 v i f = 300 a tj= 25c - 2.10 2.40 ...
Description IGBT MODULE

File Size 481.29K  /  6 Page

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