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  40a 600v Datasheet PDF File

For 40a 600v Found Datasheets File :: 781    Search Time::3.172ms    
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    FGA20N120FTD FGA20N120FTDTU

Fairchild Semiconductor
Part No. FGA20N120FTD FGA20N120FTDTU
OCR Text ...E [V] Common Emitter VGE = 15V 40a Figure 6. Saturation Voltage vs. VGE 20 Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25 ...600v 10 100s 1ms 9 400V 1 10 ms DC *Notes: o 1. TC = 25 C o 2. TJ = 150 C 3. Singl...
Description 1200V, 20A Trench IGBT

File Size 649.33K  /  9 Page

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    IRF[International Rectifier]
Part No. IRG4PC60U
OCR Text ...) typ. = 1.6V @VGE = 15V, IC = 40a n-channel Benefits * Generation 4 IGBT's offer highest efficiency available. * IGBT's optimized for...600v 2.0 VGE = 0V, VCE = 10V, TJ = 25C 5000 VGE = 0V, VCE = 600v, TJ = 150C 100 nA VGE = 20V Swit...
Description 600v UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR

File Size 120.95K  /  8 Page

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    IRF[International Rectifier]
Part No. IRG4PC60U-P
OCR Text ...) typ. = 1.6V @VGE = 15V, IC = 40a n-channel Benefits * Generation 4 IGBT's offer highest efficiency available. * Solder plated vers...600v 2.0 VGE = 0V, VCE = 10V, TJ = 25C 5000 VGE = 0V, VCE = 600v, TJ = 150C 100 nA VGE = 20V Swit...
Description INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
600v UltraFast 8-60 kHz Discrete IGBT in a TO-247AC Solder Plate package

File Size 119.66K  /  8 Page

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    SGP20N60HS SGW20N60HS

INFINEON[Infineon Technologies AG]
Part No. SGP20N60HS SGW20N60HS
OCR Text ...C, COLLECTOR CURRENT 60A 50A 40a 30A 20A 10A 0A 10Hz TC=110C IC, COLLECTOR CURRENT 15s 10A 50s 200s 1A 1ms Ic Ic DC 0,1A 1V ...600v, start at TJ=25C) VGE, GATE-EMITETR VOLTAGE Figure 20. Typical short circuit collector curre...
Description High Speed IGBT in NPT-technology

File Size 429.45K  /  12 Page

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    SKW20N60 Q67040-S4242

INFINEON[Infineon Technologies AG]
Part No. SKW20N60 Q67040-S4242
OCR Text ...CTOR CURRENT 80A 70A 60A 50A 40a 30A 20A 10A 0A 10Hz TC=110C TC=80C 10A 50s 200s 1A 1ms Ic 0.1A 1V 10V 100V DC 100Hz 1...600v, start at Tj = 25C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector cur...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 272.85K  /  14 Page

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    SGB20N60 SGB20N6006

Infineon Technologies AG
Part No. SGB20N60 SGB20N6006
OCR Text ...CTOR CURRENT 80A 70A 60A 50A 40a 30A 20A 10A 0A 10Hz TC=110C TC=80C 10A 50s 200s 1A 1ms Ic 0.1A 1V 10V 100V DC 100Hz ...600v, start at Tj = 25C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector cur...
Description Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

File Size 789.17K  /  11 Page

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    IKW15N120T2 IKW15N120T208

Infineon Technologies AG
Part No. IKW15N120T2 IKW15N120T208
OCR Text ...- pF V C C = 96 0 V, I C =40a V G E =15V nC nH A V G E =15V,t S C 1 0 s V C C = 600 V, T j , s t a r t = 2 5C T j , s t a r t = ...600v, VGE = 0/+15V, RG = 41.8) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = ...
Description Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology

File Size 380.96K  /  15 Page

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    IRG7PH46U-EP IRG7PH46UPBF

International Rectifier
Part No. IRG7PH46U-EP IRG7PH46UPBF
OCR Text ... = 0V, IC = 1mA (25C-150C) IC = 40a, VGE = 15V, TJ = 25C V IC = 40a, VGE = 15V, TJ IC = 40a, VGE = 15V, TJ VCE = VGE, IC = 1.6mA VCE(on) ...600v IC = 40a, VCC = 600v, VGE = 15V RG = 10, L = 200H,TJ = 25C d Energy losses include tail &...
Description INSULATED GATE BIPOLAR TRANSISTOR

File Size 382.29K  /  10 Page

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    IXYS[IXYS Corporation]
Part No. IXGQ20N120BD1 IXGQ20N120B
OCR Text ...0.7 -50 -25 0 25 50 75 I C = 40a I C - Amperes I C = 20A I C = 10A 100 125 150 V CE - Volts Fig. 5. Colle ctor-to-Em...600v IC = 20A IG = 1 0mA Switching Time - nanoseconds 450 td(off) tfi - - - - - R G = 10 VG...
Description High Voltage IGBT with Diode

File Size 594.73K  /  6 Page

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    IRGPS40B120UDP

International Rectifier
Part No. IRGPS40B120UDP
OCR Text ... = 3.12v @ v ge = 15v, i ce = 40a, tj=25c 11/19/04 absolute maximum ratings parameter max. units v ces collector-to-emitter...600v q gc gate - collector charge (turn-on) ??? 165 248 v ge = 15v e on turn-on switching loss ??? ...
Description Insulated Gate Bipolar Transistor

File Size 348.34K  /  12 Page

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