400v-0.48-10.7a- pdf Datasheet P1 Full Text Search --- IC-ON-LINE


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400v-0.48-10.7a- Datasheet PDF File

For 400v-0.48-10.7a- Found Datasheets File :: 95 Search Time::2.172ms
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				Infineon Technologies AG
Part No.	IPA65R225C7
OCR Text	...typ 20 nc i d,pulse 41 a e oss @400v 2.3 j body diode di/dt 55 a/s type/orderingcode package marking relatedlinks ipa65r225c7 pg-to 220 ...0,2013-10-22 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . ...
Description	high power thyristor diode
File Size	1,730.63K / 15 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FRE460R FRE460D FRE460H
OCR Text	... -20V VDS = 500V, VGS = 0 VDS = 400V, VGS = 0 VDS = 400V, VG65S = 0, TC = +125oC Time = 20s VGS = 10V, ID = 12A VGS = 10V, ID = 7A VDD = 250V, ID = 12A Pulse Width = 3s Period = 300s Rg = 10 0 VGS 10 (See Test Circuit) MIN 500 2.0 7 107 2...
Description	12A/ 500V/ 0.410 Ohm/ Rad Hard/ N-Channel Power MOSFETs 12A, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs
File Size	47.23K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SKB02N6007
OCR Text	...uency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 118) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 35W 30W 25W 20W 15W 10W 5W 0W 25C 7A 6A 5A 4A 3A 2A 1A 0A 25C IC, COLLECTOR C...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	1,149.10K / 13 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electron...
Part No.	AP05N50P AP05N50P-14
OCR Text	...ge current (t j =125 o c) v ds =400v , v gs =0v - - 250 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 3 i d =3.1a...0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 1 2 ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Fast Switching Characteristic
File Size	150.37K / 5 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STP9NM50N STD9NM50N-1 STF9NM50N
OCR Text	...drain-source voltage slope vdd= 400v, id=7.5a, vgs=10v 35 v/ns i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,tc = 125c 1 100 a a i gss gate body leakage current (v ds = 0) v gs = 20v 100 na v gs...
Description	N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh?/a> Power MOSFET N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET
File Size	463.31K / 17 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKB02N60 SKP02N60
OCR Text	...uency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 118) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 35W 30W 25W 20W 15W 10W 5W 0W 25C 7A 6A 5A 4A 3A 2A 1A 0A 25C IC, COLLECTOR C...
Description	IGBTs & DuoPacks - 2A 600V TO220AB IGBT Diode IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT Diode Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	392.65K / 13 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOT7S65
OCR Text	... w q g,typ 9.2nc e oss @ 400v 2 m j symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j , t...0.2 100 20 -55 to 150 300 104 aotf7s65l 650 30 30 1.7 43 86 5 v a w/ o c 7* mj 35 5* 7* 5* gate-sou...
Description	650V 7A a MOS TM Power Transistor
File Size	712.26K / 7 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STB15NK50Z
OCR Text	...pacitance v gs =0v,v ds = 0v to 400v 150 pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v ...0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd ...
Description	N-CHANNEL Power MOSFET
File Size	528.31K / 14 Page	View it Online	Download Datasheet

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