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7445304 SIL15C OL3492LR T24C02 26001 3080E N4006 308KITU
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  4005 Datasheet PDF File

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    2SA2097

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2097
OCR Text ... 15 W IB1 = -IB2 = -53 mA Min 3/4 3/4 -50 200 100 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 3/4 3/4 63 280 55 Max -100 -100 3/4 500 3/4 -...005 -0.003 -0.001 -0.001 -0.003 -0.01 -0.03 Tc = 100C -55C 25C Base-emitter saturation voltage VB...
Description High-Speed Swtching Applications DC-DC Converter Applications

File Size 119.11K  /  5 Page

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    2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2
OCR Text ...E = 5 V f = 1 GHz 16 6 4 8 2 0 0.5 0 0.2 0.4 0.6 0.8 1.0 1 2 5 10 20 50 VBE - Base to ...005 2.034 1.954 1.939 1.780 1.733 1.665 1.607 1.549 1.475 1.415 1.340 1.287 1.218 1.174 1.129 1.083 ...
Description    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模
NPN epitaxial-type silicon transistor

File Size 52.91K  /  8 Page

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text 4 PINS SUPER MINI MOLD FEATURES * Small Package * High Gain Bandwidth Product (fT = 12 GHz TYP.) * Low Noise, High Gain * Low Voltage Op...005 4.642 4.396 4.148 3.933 3.713 3.563 3.382 3.234 3.108 2.956 2.838 2.722 2.635 2.553 2.459 2.383 ...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.94K  /  8 Page

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    2SD1022

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1022
OCR Text ...tance AEjc Junction to case Max 4.17 *Z/W Transition Frequency fT V = 10V, 0.5A = TYP 20 Hz M CE C I Turn on Time ton Max 2 I = 5A C Storage...005~10 [s] 1 0.005~10 [ms] Transient Thermal Impedance jc(t) [C/W] 0.1 10-2 10-1 ...
Description Darlington Transistor(5A NPN)

File Size 273.90K  /  8 Page

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    2SD1023

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1023
OCR Text ...tance AEjc Junction to case Max 4.17 *Z/W Transition Frequency fT V = 10V, 0.5A = TYP 20 MHz CE C I Turn on Time ton Max 2 I = 3A C Storage ...005~5 [s] 1 0.005~5 [ms] Transient Thermal Impedance jc(t) [C/W] 0.1 10-2 10-1 ...
Description Darlington Transistor(5A NPN)

File Size 290.46K  /  9 Page

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    2SD1024

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1024
OCR Text ...Voltage 3.2 3A 5A 8A 12A 2.8 2.4 2 1.6 1.2 0.8 0.4 0 1 10 100 200 3.2 IC = 1A 2.8 2.4 12A 2 8A 5A 3A 1.6 IC = 1A 1....005~10 [s] 1 0.005~10 [ms] Transient Thermal Impedance jc(t) [C/W] 0.1 10-2 10-1 ...
Description Darlington Transistor(8A NPN)

File Size 275.54K  /  8 Page

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    2SD1025

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1025
OCR Text ...2A 2.8 3.2 1A 2.8 2.4 8A IC = 0.5A 12A 2.4 2 5A 3A 2 1.6 1.6 1A 1.2 1.2 IC = 0.5A Collector-Emitte...005~5 [s] 1 0.005~5 [ms] Transient Thermal Impedance jc(t) [C/W] 0.1 10-2 10-1 ...
Description Darlington Transistor(8A NPN)

File Size 343.47K  /  8 Page

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    2SD1113 2SD1113K

HITACHI[Hitachi Semiconductor]
Part No. 2SD1113 2SD1113K
OCR Text ...= 300 V, RBE = VCE = 2 V, IC = 4 A*1 I C = 4 A, IB = 40 mA*1 I C = 4 A, IB = 40 mA*1 I C = 4 A, IB1 = -IB2 = 40 mA I C = 4 A, IB1 = -IB2 = ...005 0.5 1.0 2 5 10 20 50 100200 500 Collector to emitter voltage VCE (V) 2 2SD1113(K) DC Curr...
Description Silicon NPN Triple Diffused

File Size 31.56K  /  5 Page

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    2SD1138

HITACHI[Hitachi Semiconductor]
Part No. 2SD1138
OCR Text ...C = 0 VCB = 120 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 10 V, IC = 500 mA*2 I C = 500 mA, IB = 50 mA*2 VCB = 4 V, IC = 50 mA VCB = 100 V, IE =...005 10 20 50 100 200 500 1,000 2,000 Collector current IC (mA) -25 25 Collector to Emitter Satura...
Description Silicon NPN Transistor
Silicon NPN Triple Diffused

File Size 30.91K  /  6 Page

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    2SD655

Hitachi,Ltd.
Hitachi Semiconductor
Part No. 2SD655
OCR Text ...nt Temperature Ta (C) 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 1,000 DC Current Transfer Ratio hFE Collector Current IC (mA) 300 100 30 10 3 1 0 0.2 0.4 0.6 0.8 Base to Emitter Voltage VBE ...
Description Silicon NPN Epitaxial npn型硅外延

File Size 28.39K  /  6 Page

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