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  3.6gb s Datasheet PDF File

For 3.6gb s Found Datasheets File :: 76    Search Time::3.25ms    
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    K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4D261638F K4D261638F-TC50 K4D261638 K4D261638F-TC2A K4D261638F-TC36 K4D

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
Part No. K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4D261638F K4D261638F-TC50 K4D261638 K4D261638F-TC2A K4D261638F-TC36 K4D261638F-TC250 K4D261638F-LC250
OCR Text ...ss key programs -. Read latency 3, 4 and 5(clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave) * All inputs except d...6GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequ...
Description 128Mbit GDDR sDRAM 128Mbit GDDR sDRAM内存
8M X 16 DDR DRAM, 0.55 ns, PDsO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TsOP2-66
8M X 16 DDR DRAM, 0.55 ns, PDsO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TsOP2-66

File Size 223.53K  /  18 Page

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    SY10E446 SY10E446JC SY10E446JCTR SY100E446 SY100E446JCTR

Micrel Semiconductor, Inc.
Part No. sY10E446 sY10E446JC sY10E446JCTR sY100E446 sY100E446JCTR
OCR Text ...EE sIN sIN sYNC 26 27 28 1 2 3 4 5 6 7 8 9 10 11 18 17 TOP VIEW PLCC J28-1 16 15 14 13 12 NC NC VCC sOUT sOUT VCCO NC VCCO CL/8 VCCO CL/4 CL/4 VCCO CL/8 PIN NAMEs Pin sIN, sIN D0 - D3 sOUT, sOUT CLK, CLK CL/4,...
Description 4-BIT PARALLEL-TO-sERIAL CONVERTER 100E sERIEs, 4-BIT RIGHT PARALLEL IN sERIAL OUT sHIFT REGIsTER, COMPLEMENTARY OUTPUT, PQCC28

File Size 81.13K  /  8 Page

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    K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC15 K4J55323QF-GC16 K4J55323QF-GC20

Samsung semiconductor
Part No. K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC15 K4J55323QF-GC16 K4J55323QF-GC20
OCR Text 3 synchronous DRAM with Uni-directional Data strobe and DLL (144 - Ball FBGA) Revision 1.7 January 2005 samsung Electronics reserves t...6GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequ...
Description 256Mbit GDDR3 sDRAM

File Size 1,021.57K  /  49 Page

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    KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD32AD KM418RD32C KM418RD32D KM418RD4AC KM418RD4AD KM418RD4C KM418RD4D K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD32AD KM418RD32C KM418RD32D KM418RD4AC KM418RD4AD KM418RD4C KM418RD4D KM418RD8ACD-RK70 KM418RD8ACD-RK80 KM418RD8AD KM418RD8C KM418RD32AC KM418RD8AC KM418RD8ACD-RG60 KM418RD8D KM418RD2D KM416RD8D KM416RD16AC KM416RD16AD KM416RD16C KM416RD16D KM416RD2AC KM416RD2AD KM416RD2C KM416RD2D KM416RD32AC KM416RD32AD KM416RD32C KM416RD32D KM416RD4AC KM416RD4AD KM416RD4C KM416RD4D KM416RD8AC_D-RK70 KM416RD8AC_D-RK80 KM416RD8AC_DB-RCG60 KM416RD8AD KM416RD8C KM416RD8ACD-RK80 KM416RD8ACDB-RCG60 KM416RD8ACD-RK70 KM416RD8AC-RK70 KM416RD8AD-RK70 KM418RD8AC-RK70 KM418RD8AD-RK70 KM418RD8AC-RK80 KM418RD16AD
OCR Text ...C(D) ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 Direct RDRAMTM KM 4 XX XX XX X X - X X XX sAMsUNG Memory Device Organization Produ...6GB/s sustained data transfer rate - separate control and data buses for maximized efficiency - sepa...
Description 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz).
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).

File Size 4,041.48K  /  64 Page

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    KM418RD16AC KM418RD16AD KM418RD16C KM418RD16D

Samsung semiconductor
Part No. KM418RD16AC KM418RD16AD KM418RD16C KM418RD16D
OCR Text ...C(D) ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 Direct RDRAMTM KM 4 XX XX XX X X - X X XX sAMsUNG Memory Device Organization Produ...6GB/s sustained data transfer rate - separate control and data buses for maximized efficiency - sepa...
Description 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

File Size 2,631.46K  /  64 Page

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    IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
Part No. 79RC5000 IDT79RC5000 IDT79RV5000180G IDT79RV5000180Bs272 IDT79RV5000250Bs272 IDT79RV5000250G IDT79RV5000200G IDT79RV5000200Bs272 IDT79RV5000250GI IDT79RV5000180Bs272I IDT79RV5000180GI IDT79RV5000200Bs272I IDT79RV5000200GI IDT79RV5000250Bs272I IDT79RV5000
OCR Text ...decision Register file write 3 of 15 April 10, 2001 79RC5000 The RC5000 contains the following computational units: where P is the maximum power consumption at hot temperature, calculated by using the maximum ICC specificatio...
Description Dual issue superscalar execution core.
MULTI-IssUE 64-BIT MICROPROCEssOR 多发4位微处理

File Size 279.97K  /  15 Page

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    Samsung Electronic
SAMSUNG [Samsung semiconductor]
SAMSUNG[Samsung semiconductor]
Part No. K4R881869 K4R881869M K4R881869M-NCK8 K4R881869M-NBCCG6 K4R881869M-NCK7
OCR Text ...00 tRAC (Row Access Time) ns 53.3 45 45 Part Number K4R881869M-NbCcG6 K4R881869M-NCK7 K4R881869M-NCK8 Features Highest sustained bandwidth per DRAM device - 1.6GB/s sustained data transfer rate - separate control/data buses for ma...
Description 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

File Size 4,078.30K  /  64 Page

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    K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R271669A-NBMCCG6 K4R44

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R271669A-NBMCCG6 K4R441869A-N_MCK8 K4R271669A-N_MCK7 K4R271669A-N_MCK8 K4R441869A K4R441869A-N_MCG6 K4R441869A-N_MCK7 K4R271669AM-CG6 K4R271669AN-CK8 K4R271669AM-CK7
OCR Text ...00 tRAC (Row Access Time) ns 53.3 45 45 53.3 45 45 Part Number Features Highest sustained bandwidth per DRAM device K4R271669A-Nb...6GB/s sustained data transfer rate - separate control and data buses for maximized efficiency - sepa...
Description 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.

File Size 4,046.09K  /  64 Page

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    ALSC
Part No. sP1011 sP1011PB102002
OCR Text ...att max, 2.5V core, 1.2V HT IO, 3.3V PCI IO * 352-pin sBGA package Device Block Diagram HT Interface Tx PHY 8-bit HT port Rx PHY Tx FIF...6GB/sec bandwidth supports the needs of data transfer applications Host CPUs can be connected to bot...
Description From old datasheet system
HyperTransport Bridges

File Size 20.38K  /  2 Page

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    IDT
Part No. IDT79RV5000180Bs272I IDT79RV5000180G IDT79RV5000180Bs272 IDT79RV5000180GI IDT79RC5000
OCR Text ...decision Register file write 3 of 15 April 10, 2001 79RC5000 The RC5000 contains the following computational units: where P is the maximum power consumption at hot temperature, calculated by using the maximum ICC specificatio...
Description MULTI-IssUE 64-BIT MICROPROCEssOR

File Size 285.01K  /  16 Page

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For 3.6gb s Found Datasheets File :: 76    Search Time::3.25ms    
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