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  2mx8 x16 Datasheet PDF File

For 2mx8 x16 Found Datasheets File :: 44    Search Time::1.984ms    
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Part No. K8D1716UBC-PC070
OCR Text ...type flash memory organiz ed as 2mx8 or 1m x16. the memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group. this block architecture pr ovides highly flexible erase and p...
Description 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48

File Size 565.81K  /  41 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K8D1716UBB-YI07 K8D1716UBB-YI08 K8D1716UBB-YI09 K8D1716UTB-TC09 K8D1716UTB-TC08 K8D1716UTB-TC07 K8D1716UTB-YI09 K8D1716UTB-YI08 K8D1716UTB-YI07 K8D1716UTB-YC08 K8D1716UTB-YC09 K8D1716UTB-YC07 K8D1716UTB-TI07 K8D1716UTB-TI09 K8D1716UTB-TI08 K8D1716UBB-TC08 K8D1716UBB-TI07 K8D1716UBB-YC09 K8D1716UBB-YC07 K8D1716UBB-TC09 K8D1716UBB-TC07 K8D1716UBB-YC08 K8D1716UBB-TI08
OCR Text ...type flash memory organiz ed as 2mx8 or 1m x16. the memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group. this block architecture pr ovides highly flexible erase and p...
Description 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory 1,600位(200万x8/1M x16)的双银行NOR闪存

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Part No. K8D1716UBC-DC07 K8D1716UBC-DC08 K8D1716UBC-DI07 K8D1716UBC-FI08 K8D1716UBC-DI08 K8D1716UBC-FI07 K8D1716UBC-PI08 K8D1716UBC-PC08 K8D1716UBC-FC07 K8D1716UBC-FC08 K8D1716UBC-PC09 K8D1716UBC-PC07 K8D1716UBC-DC09 K8D1716UBC-PI09 K8D1716UBC-TC07 K8D1716UBC-TC08
OCR Text ...type flash memory organiz ed as 2mx8 or 1m x16. the memory architecture of the dev ice is designed to divide its memory arrays into 39 blocks to be protected by the block group. this block architecture pr ovides highly flexible erase and p...
Description 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory

File Size 671.79K  /  41 Page

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Samsung
Part No. K8D1716UBB K8D1716UTB K8D1716UTB-TC09 K8D1716UTB-YI09 K8D1716UBB-YI07 K8D1716UBB-YI08 K8D1716UBB-YI09
OCR Text ...-type Flash Memory organized as 2mx8 or 1M x16. The memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group. This block architecture provides highly flexible erase and prog...
Description 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
16M Dual Bank NOR Flash Memory

File Size 486.90K  /  40 Page

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    Samsung Electronics
Part No. K8D1716UBC K8D1716UTC
OCR Text ...-type Flash Memory organized as 2mx8 or 1M x16. The memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group. This block architecture provides highly flexible erase and prog...
Description 16M-Bit Dual Bank NOR Flash Memory

File Size 628.07K  /  41 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HY27US08121B-TIS HY27US16121B-TIP HY27US08121B-FPCB
OCR Text ...eries is a 64mx8bit with sp are 2mx8 bit capacity. the device is offered in 3.3v vcc power supply. their nand cell provides the most cost-e...x16 device) page in typical 200us and an erase operation can be performed in typica l 2ms on a 16k-...
Description 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48
32M X 16 FLASH 3.3V PROM, 18 ns, PDSO48
64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63

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    HY27US08121A HY27US16121A HY27SS08121A HY27SS16121A HY27SS08121A-TCP HY27SS08121A-TPCP HY27SS08121A-FPCP HY27SS08121A-SM

Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
Part No. HY27US08121A HY27US16121A HY27SS08121A HY27SS16121A HY27SS08121A-TCP HY27SS08121A-TPCP HY27SS08121A-FPCP HY27SS08121A-SMP HY27SS08121A-FCP HY27SS16121A-FCP HY27SS08121A-SPCP HY27SS16121A-FPCP HY27SS16121A-SMP HY27SS16121A-SCP HY27SS16121A-FEB HY27US08121A-FES
OCR Text ...series is a 64Mx8bit with spare 2mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cel...x16 x8 x16 VCC RANGE 1.70 - 1.95 Volt 63FBGA / 48TSOP1 / 48USOP1 2.7V - 3.6 Volt PACKAGE Rev 1.3 ...
Description 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, TSOP1-48
64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
64M X 8 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63
32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, FBGA-63
64M X 8 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48
32M X 16 FLASH 1.8V PROM, 40 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
32M X 16 FLASH 1.8V PROM, 40 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
64M X 8 FLASH 3.3V PROM, 30 ns, PBGA63

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K8D1716U K8D1716UT K8D1716UB K8D1716UBB-TC07 K8D1716UBB K8D1716UBB-TC08 K8D1716UBB-TC09 K8D1716UTB-TC07 K8D1716UTB K8D1716UTB-TC08 K8D1716UTB-TC09 K8D1716UTB-YI09 K8D1716UBB-TI07 K8D1716UBB-TI08 K8D1716UBB-TI09 K8D1716UBB-YC07 K8D1716UBB-YC08 K8D1716UBB-YC09 K8D1716UBB-YI07 K8D1716UBB-YI08 K8D1716UBB-YI09 K8D1716UTB-TI07 K8D1716UTB-TI08 K8D1716UTB-TI09 K8D1716UTB-YC07 K8D1716UTB-YC09 K8D1716UTB-YI07 K8D1716UTB-YI08 K8D1716UTB-YC08
OCR Text ...-type Flash Memory organized as 2mx8 or 1M x16. The memory architecture of the device is designed to divide its memory arrays into 39 blocks to be protected by the block group. This block architecture provides highly flexible erase and prog...
Description 16M Dual Bank NOR Flash Memory
16M BIT (2M X8/1M x16) DUAL BANK NOR FLASH MEMORY

File Size 479.04K  /  40 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K8D1716UTC-TC09 K8D1716UTC-FI09 K8D1716UTC-FI07 K8D1716UTC-FI08 K8D1716UTC-DI08 K8D1716UTC-DI09 K8D1716UTC-DI07 K8D1716UTC-PI09 K8D1716UTC-PI07 K8D1716UTC-PI08 K8D1716UTC-TI09 K8D1716UTC-TI08 K8D1716UBC-DI09 K8D1716UBC-DC08 K8D1716UBC-DI08 K8D1716UBC-DI07 K8D1716UBC-DC09 K8D1716UBC-DC07 K8D1716UBC-PC09 K8D1716UBC-PI09 K8D1716UBC-FC07 K8D1716UBC-FI09 K8D1716UBC-PI08 K8D1716UBC-TC07 K8D1716UBC-PI07 K8D1716UBC-TI08 K8D1716UBC-TI09 K8D1716UBC-PC08 K8D1716UBC-TI07 K8D1716UBC-FC09 K8D1716UBC-FC08 K8D1716UBC-PC07 K8D1716UBC-TC09 K8D1716UBC-TC08
OCR Text ...type flash memory organiz ed as 2mx8 or 1m x16. the memory architecture of the dev ice is designed to divide its memory arrays into 39 blocks to be protected by the block group. this block architecture pr ovides highly flexible erase and p...
Description 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory

File Size 680.78K  /  41 Page

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    ALSC[Alliance Semiconductor Corporation]
Part No. AS29LV160T AS29LV160 AS29LV160B
OCR Text 2mx8 / 1Mx16 * Sector architecture - One 16K; two 8K; one 32K; and thirty-one 64K byte sectors - One 8K; two 4K; one 16K; and thirty-one 32K...x16 data appears on DQ0-DQ15. The AS29LV160 is offered in JEDEC standard 48-pin TSOP, 48-pin BGA, an...
Description 3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM

File Size 253.15K  /  29 Page

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For 2mx8 x16 Found Datasheets File :: 44    Search Time::1.984ms    
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