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				Cypress Semiconductor
Part No.	CY7C1245KV1812
OCR Text	...ic block diagram ? cy7c1245kv18 256k x 36 array clk a (17:0) gen. k k control logic address register d [35:0] read add. decode read data reg. rps wps control logic address register reg. reg. reg. 72 18 144 36 bws [3:0] v ref write add. deco...
Description	36-Mbit QDR? II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)
File Size	615.30K / 30 Page	View it Online	Download Datasheet

				NEC Corp. NEC, Corp.
Part No.	UPD70F3025AGC-25-8EU UPD70F3003AGC-25-8EU
OCR Text	...memory: 128K bytes (PD70F3003A) 256k bytes (PD70F3025A) Remark For differences among the products, refer to 1. DIFFERENCES AMONG PRODUCT. ORDERING INFORMATION Part Number Package 100-pin plastic LQFP (fine pitch) (14 x 14 mm) 100-pin pl...
Description	Circular Connector; No. of Contacts:24; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:25-24 RoHS Compliant: No V853TM 32-/16-BIT SINGLE-CHIP MICROCONTROLLER V853TM 32-/16-BIT单片
File Size	296.54K / 44 Page	View it Online	Download Datasheet

				Motorola, Inc. Electronic Theatre Controls, Inc. Motorola Mobility Holdings, Inc.
Part No.	MCM72PB8ML3.5R MCM72PB8ML4 MCM72PB8ML4R MCM72FB8ML7.5R
OCR Text	256k x 72 Bit BurstRAM Multichip Module The 256k x 72 multichip module uses four 4M bit synchronous fast static RAMs designed to provide a burstable, high performance, secondary cache for the PowerPCTM and other high performance microproce...
Description	256k x 72 Bit Burst RAM Multichip Module 256k X 72 CACHE SRAM MODULE, 3.5 ns, PBGA209 256k x 72 Bit Burst RAM Multichip Module 256k X 72 CACHE SRAM MODULE, 4 ns, PBGA209 CAP CER 680PF 100V C0G 0603 256k X 72 CACHE SRAM MODULE, 7.5 ns, PBGA209
File Size	257.63K / 20 Page	View it Online	Download Datasheet

				WINBOND[Winbond]
Part No.	W49V002A W49V002AP W49V002AQ W49V002
OCR Text	256k x 8 CMOS FLASH MEMORY WITH LPC INTERFACE GENERAL DESCRIPTION The W49V002A is a 2 -megabit, 3.3-volt only CMOS flash memory organized as 256k x 8 bits. The device can be programmed and erased in-system with a standard 3.3V power supply...
Description	256k x 8 CMOS FLASH MEMORY WITH LPC INTERFACE
File Size	284.55K / 32 Page	View it Online	Download Datasheet

				Fujitsu Limited http:// Fujitsu Component Limited. Fujitsu Component Limit...
Part No.	MBM29F002TC MBM29F002TC-90 MBM29F002TC-70 MBM29F002TC-55 MBM29F002BC-55 MBM29F002BC-70 MBM29F002BC-90
OCR Text	256k x 8) BIT MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90 s FEATURES * * Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible with single-p...
Description	2M (256k X 8) BIT 2M (256k X 8) BIT
File Size	316.71K / 46 Page	View it Online	Download Datasheet

				Maxwell Technologies
Part No.	79C0832RPQE15 79C0832XPQE20 79C0832XPQE15 79C0832RPQE20 79C0832RPQH15 79C08325 79C0832RPQH20 79C0832XPQH20 79C0832RT1QK15 79C0832RT1QE20 79C0832RT4QE20 79C0832RT2QE20
OCR Text	...01 - www.maxwell.com 8 megabit (256k x 32-bit) eeprom mcm 79c0832 ?2006 maxwell technologies all rights reserved. 02.14.06 rev 15 f eatures : ? 256k x 32-bit eeprom mcm r ad -p ak ? radiation-hardened against natural space radiation t...
Description	8 Megabit EEPROM MCM 8 Megabit EEPROM MCM
File Size	474.74K / 18 Page	View it Online	Download Datasheet

				SIEMENS AG
Part No.	HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514175BJ-60
OCR Text	256k x 16-Bit EDO-DRAM HYB 514175BJ-50/-55/-60 Advanced Information * * * * 262 144 words by 16-bit organization 0 to 70 C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 55 ns (-55 version) 60 ns...
Description	256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
File Size	180.37K / 22 Page	View it Online	Download Datasheet

				SIEMENS AG
Part No.	HYB514171BJ-50- Q67100-Q727 Q67100-Q2021 HYB514171BJ-60
OCR Text	256k x 16-Bit Dynamic RAM HYB 514171BJ-50/-60 Advanced Information * * * * 262 144 words by 16-bit organization 0 to 70 C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) CAS ac...
Description	256k x 16-Bit Dynamic RAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
File Size	184.28K / 23 Page	View it Online	Download Datasheet

				http:// SIEMENS AG
Part No.	HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB314175BJ-55 HYB314175BJL-60 HYB314175BJL-55 Q67100-Q2149 HYB314175BJ-50
OCR Text	...YB 314175BJ/BJL-50/-55/-60 3.3V 256k x 16 EDO-DRAM Ordering Information Type HYB 314175BJ-50 HYB 314175BJ-55 HYB 314175BJ-60 HYB 314175BJL-50 HYB 314175BJL-55 HYB 314175BJL-60 Truth Table RAS H L L L L L L L L LCAS H H L H L L H L L UCAS...
Description	High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256k×16外延式数据输出（EDO)动态RAM)
File Size	1,310.29K / 24 Page	View it Online	Download Datasheet

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