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  190v Datasheet PDF File

For 190v Found Datasheets File :: 114    Search Time::0.984ms    
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    AN8146FBQ

PANASONIC[Panasonic Semiconductor]
Part No. AN8146FBQ
OCR Text ...tive-surge resistance (Approx. -190v at 200pF). Therefore, particular care must be taken when it is used. q Operational Timing tWH tWL Clock input tS tH Data input Dn - 1 Dn Dn + 1 s Reference Power Dissipation on Packag...
Description 10-Bit 3-channel D/A Converter IC

File Size 35.62K  /  4 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75945P3 HUF75945G3 HUF75945S3ST
OCR Text ...50A, VGS = 0V (Figure 11) VDS = 190v, VGS = 0V VDS = 180V, VGS = 0V, TC = 150oC Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance ...
Description 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs
38A 200V 0.071 Ohm N-Channel UltraFET Power MOSFETs
38A, 200V, 0.071 Ohm, N-Channel, UltraFETPower MOSFETs

File Size 206.61K  /  10 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75939S3ST HUF75939P3 HUF75939P3NL
OCR Text ...50A, VGS = 0V (Figure 11) VDS = 190v, VGS = 0V VDS = 180V, VGS = 0V, TC = 150oC Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance ...
Description 22A, 200V, 0.125 Ohm, N-Channel, UltraFETPower MOSFET
22A 200V 0.125 Ohm N-Channel UltraFET Power MOSFET
22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET

File Size 192.70K  /  10 Page

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    Linear Technology Corporation
Part No. LTC6078 LTC6078_LTC6079
OCR Text ...TA01a AMPLIFIER PROTECTED TO 190v, ACCIDENTAL CONTACT U VOS Distribution 3 5 7 9 60789 TA01b U U 60789f 1 LTC6078/LTC6079 ABSOLUTE (Note 1) AXI U RATI GS Specified Temperature Range (Note 4) LTC6078C, LTC6079C ....
Description Micropower Precision,Dual/Quad CMOS Rail-to-Rail Input/Output Amplifi ers
Micropower Precision, Dual/Quad CMOS Rail-to-Rail Input/Output Amplifiers

File Size 281.30K  /  20 Page

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    HUF75925D3ST HUF75925P3 HUF75831SK8

FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75925D3ST HUF75925P3 HUF75831SK8
OCR Text ...50A, VGS = 0V (Figure 11) VDS = 190v, VGS = 0V VDS = 180V, VGS = 0V, TC = 150oC Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance ...
Description 3A/ 150V/ 0.095 Ohm/ N-Channel/ UltraFET Power MOSFET
11A, 200V, 0.275 Ohm, N-Channel, UltraFETPower MOSFETs
11A, 200V, 0.275 Ohm, N-Channel, UltraFET Power MOSFETs
11A 200V 0.275 Ohm N-Channel UltraFET Power MOSFETs

File Size 193.69K  /  10 Page

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    SP4416 SP4416EU SP4416UEB

SIPEX[Sipex Corporation]
Part No. SP4416 SP4416EU SP4416UEB
OCR Text ...d EL2 Outputs EL1 Output VPP=190v (typical) EL2 Output Differential Representation E12 Figure 12. EL Differential Output Waveform of the EL1 and EL2 Outputs SP4416DS/06 SP4416 Electroluminescent Lamp Driver with 4-Level Light Intensi...
Description Electroluminescent Lamp Driver with 4-Level Light Intensity Selection Feature

File Size 92.10K  /  13 Page

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    RS506

MICRO COMMERCIAL COMPONENTS
Part No. RS506
OCR Text ...rs501 100v 65v 40v 65v rs502 190v 125v 80v 125v rs503 300v 200v 125v 200v rs504 600v 400v 250v 400v rs505 900v 600v 380v 600v rs506 1200v 800v 500v 800v rs507 1500v 1000v 630v 1000v electrical characteristics @ 25 c unless...
Description 4 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

File Size 105.48K  /  2 Page

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    CXA2504 CXA2504N

SONY[Sony Corporation]
Part No. CXA2504 CXA2504N
OCR Text ...80V/s (Typ.) * Driver slew rate 190v/s (Typ.) (for 300pF load capacitance) * Sample-and-hold circuit slew rate adjustment function * Driver slew rate adjustment function Structure Bipolar silicon monolithic IC Applications * Liquid crystal ...
Description Sample-and-Hold Driver IC for LCD

File Size 211.11K  /  13 Page

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    ZVP4424Z

ZETEX[Zetex Semiconductors]
Diodes Incorporated
Part No. ZVP4424Z
OCR Text ..., VDS=0V VDS=-240V, VGS=0V VDS=-190v, VGS=0V, T=125C VDS=-10V, VGS=-10V VGS=-10V, ID=-200mA VGS=-3.5V, ID=-100mA VDS=-10V,ID=-0.2A (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measu...
Description    P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
SOT89 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 95.78K  /  4 Page

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