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  100v 25a Datasheet PDF File

For 100v 25a Found Datasheets File :: 1388    Search Time::1.64ms    
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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FRK150R FRK150D FRK150H
OCR Text 100v, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs Package TO-204AE Features * 40A, 100v, RDS(on) = 0.055 * Second Generation Rad Hard...25a VDD = 50V, ID = 40A Pulse Width = 3s Period = 300s, Rg = 25 0 VGS 10 (See Test Circuit) MIN 10...
Description 40A, 100v, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
40A/ 100v/ 0.055 Ohm/ Rad Hard/ N-Channel Power MOSFETs

File Size 47.77K  /  6 Page

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    Infineon Technologies
Part No. K25N120
OCR Text ...withstand time 2 v ge = 15v, 100v v cc 1200v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 313 w operating...25a t j =25 c t j =150 c 2.5 - 3.1 3.7 3.6 4.3 diode forward voltage v f v g...
Description Fast IGBT in NPT-technology

File Size 392.52K  /  13 Page

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    NXP Semiconductors N.V.
Part No. PSMN013-100PS NXPSEMICONDUCTORSN.V.-PSMN013-100PS
OCR Text ... data psmn013-100ps n-channel 100v 13.9m ? standard level mosfet in to220. rev. 3 ? 29 september 2011 product data sheet to-220ab table ...25a; v ds =50v; see figure 15 ; see figure 14 -17-nc psmn013-100ps all information provided in...
Description N-channel 100v 13.9m standard level MOSFET in TO220. PSMN013-100PS<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<Always Pb-free,;

File Size 195.92K  /  15 Page

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    QEB75-48S05 QEB75-24S05 QEB75-24S12 QEB75-24S3P3 QEB75-48S1P8

Power Mate Technology Co., LTD
Power Mate Technology C...
Part No. QEB75-48S05 QEB75-24S05 QEB75-24S12 QEB75-24S3P3 QEB75-48S1P8
OCR Text ...ippon chemi-con KY series, 220F/100v, ESR 48m. 10.BASEPLATE GROUNDINGBase-plate should be grounded at one of the four screw bolts prior to operation. 11.The converter is provided by basic insulation. Page 2 of 4 Issued Date2008/05/21 ...
Description 75 WATTS MAXIMUM OUTPUT POWER

File Size 304.48K  /  4 Page

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    IRFD1Z3 IRFD1Z0 IRFD1Z2 IRFD1Z1

INTERSIL[Intersil Corporation]
Part No. IRFD1Z3 IRFD1Z0 IRFD1Z2 IRFD1Z1
OCR Text 100v, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistor...25a, VGS = 10V (See Figures 7, 8) - gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS VG...
Description 0.4A and 0.5A/ 60V and 100v/ 2.4 and 3.2 Ohm/ N-Channel Power MOSFETs
0.4A and 0.5A, 60V and 100v, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
0.4A and 0.5A 60V and 100v 2.4 and 3.2 Ohm N-Channel Power MOSFETs

File Size 57.24K  /  6 Page

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    INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. JANSR2N7292 FN4293
OCR Text 100v, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET Description The Intersil Corporation has designed a series of SECOND GENERATION hardened...25a, 100v, rDS(ON) = 0.070 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Dose Rate ...
Description 25 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
From old datasheet system
25a/ 100v/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET
25a, 100v, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET 25 A, 100 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

File Size 37.80K  /  7 Page

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    SGW25N12009 SGW25N120

Infineon Technologies AG
Part No. SGW25N12009 SGW25N120
OCR Text ...cuit withstand time2 VGE = 15V, 100v VCC 1200V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Soldering tem...25a Eoff 2.9mJ Tj 150C Marking Package C G E PG-TO-247-3 SGW25N120 PG-TO-247-3 1 2 ...
Description Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

File Size 331.27K  /  11 Page

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    SSD25N10

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
Part No. SSD25N10
OCR Text 100v , r ds(on) 48m n-ch enhancement mode power mosfet elektronische bauelemente 24-oct-2012 rev. a page 1 of 4 http://www....25a , 100v , r ds(on) 48m n-ch enhancement mode power mosfet elektronische bauelemente 24-o...
Description N-Ch Enhancement Mode Power MOSFET

File Size 410.47K  /  4 Page

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    SGB07N120 SGB07N12007

Infineon Technologies AG
Part No. SGB07N120 SGB07N12007
OCR Text ...withstand time 2 v ge = 15v, 100v v cc 1200v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 125 w ope...25a 30a 35 a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a dc 1ms 20...
Description Fast IGBT in NPT-technology lower Eoff compared to previous generation

File Size 437.70K  /  11 Page

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For 100v 25a Found Datasheets File :: 1388    Search Time::1.64ms    
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