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  1-3g1b Datasheet PDF File

For 1-3g1b Found Datasheets File :: 16    Search Time::3.219ms    
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    TOSHIBA
Part No. 1SS196
OCR Text 1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Ultra High Speed Switching Application l Small package l Low forward voltage...3G1B Electrical Characteristics (Ta = 25C) Characteristic Symbol VF (1) Forward voltage VF (2) ...
Description Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application

File Size 116.28K  /  4 Page

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    1SS31107 1SS311

Toshiba Semiconductor
Part No. 1SS31107 1SS311
OCR Text 1SS311 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 High Voltage,High Speed Switching Applications Low forward voltage High volt...3G1B TOSHIBA temperature/current/voltage and the significant change in Weight: 0.012g temperature, e...
Description High Voltage,High Speed Switching Applications

File Size 187.99K  /  3 Page

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    1SS19307 1SS193

Toshiba Semiconductor
Part No. 1SS19307 1SS193
OCR Text 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Ultra High Speed Switching Application Small package Low forward voltage Sma...3G1B Electrical Characteristics (Ta = 25C) Characteristic Symbol VF (1) Forward voltage VF (2) V...
Description Ultra High Speed Switching Application

File Size 179.97K  /  3 Page

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    1SS19607 1SS196

Toshiba Semiconductor
Part No. 1SS19607 1SS196
OCR Text 1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Ultra High Speed Switching Application Small package Low forward voltage Sma...3G1B Electrical Characteristics (Ta = 25C) Characteristic Symbol VF (1) Forward voltage VF (2) V...
Description Ultra High Speed Switching Application

File Size 179.74K  /  3 Page

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    1SS29407

Toshiba Semiconductor
Part No. 1SS29407
OCR Text 1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Low Voltage High Speed Switching Low forward voltage Low reverse s...3G1B Weight: 0.012g Note: Using continuously under heavy loads (e.g. the application of high tempera...
Description Low Voltage High Speed Switching

File Size 192.60K  /  3 Page

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    1SS30707 1SS307

Toshiba Semiconductor
Part No. 1SS30707 1SS307
OCR Text 1SS307 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 General Puropose Rectifier Applications Low forward voltage Low reverse curr...3G1B TOSHIBA Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.0...
Description General Puropose Rectifier Applications

File Size 185.42K  /  3 Page

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    1SS34407

Toshiba Semiconductor
Part No. 1SS34407
OCR Text 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application Low forward voltage : VF (3)...3G1B TOSHIBA Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.012g...
Description Ultra High Speed Switching Application

File Size 177.32K  /  3 Page

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    1SS34807 1SS348-07

Toshiba Semiconductor
Part No. 1SS34807 1SS348-07
OCR Text 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Low forward voltage Low reverse c...3G1B temperature, etc.) may cause this product to decrease in the Weight: 0.012g reliability signifi...
Description Low Voltage High Speed Switching

File Size 177.55K  /  3 Page

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    1SS34907

Toshiba Semiconductor
Part No. 1SS34907
OCR Text 1SS349 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application Low forward voltage Low reve...3G1B TOSHIBA Note: Using continuously under heavy loads (e.g. the application of high temperature...
Description Ultra High Speed Switching Application

File Size 183.61K  /  3 Page

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    1SS39407 1SS394

Toshiba Semiconductor
Part No. 1SS39407 1SS394
OCR Text 1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application Small package Low forward voltage...3G1B temperature/current/voltage and the significant change in Weight: 0.012g temperature, etc.) may...
Description High Speed Switching Application

File Size 175.24K  /  3 Page

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For 1-3g1b Found Datasheets File :: 16    Search Time::3.219ms    
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