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  h-982-38 Datasheet PDF File

For h-982-38 Found Datasheets File :: 216    Search Time::1.375ms    
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    MRF15060 MRF15060S

MOTOROLA[Motorola, Inc]
Part No. MRF15060 MRF15060S
OCR Text ... M TA M B M N H E F C -T- SEATING PLANE DIM A B C D E F G H K N Q R INCHES MIN MAX 0.995 1.005 0.380 0.390 0.170 0.205 0.455 0.465 0.060 0.075 0.004 0.006 0.800 BSC 0.078 0.090 0.117 0.137 0.595 0.605 0.120 0.130...
Description RF POWER BIPOLAR TRANSISTORS

File Size 162.37K  /  8 Page

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    MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text ...6 Vdc IDQ = 500 mA f = 1880 MHz h Pout 60 55 , DRAIN EFFICIENCY (%) 50 45 40 35 30 25 20 15 Figure 7. Output Power versus Frequency Figure 8. Output Power and Efficiency versus Input Power 0 -2 Gps -4 -6 -8 -10 -12 -14 IRL VDD = 2...
Description HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes
RF Power Field Effect Transistors

File Size 486.59K  /  8 Page

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    TVV100 ASI1005 ASI10524 ASI10539 ASI10638 ASI10662

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. TVV100 ASI1005 ASI10524 ASI10539 ASI10638 ASI10662
OCR Text ...zation System F E .1925 .125 K H O 4 x .060 R I J N LM MAXIMUM RATINGS DIM MINIMUM inches / mm MAXIMUM inches / mm IC ...982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1...
Description NPN Silicon RF Power Transistor(Ic:16 A,Vcbo: 65 V,Vceo: 33 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:16 A,Vcbo: 65 V,Vceo: 33 V,Vebo: 3.5 V))

File Size 17.20K  /  1 Page

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    UFT15-28S ASI10665

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. UFT15-28S ASI10665
OCR Text ...Metalization System OC D H I J #8-32 UNC-2A G F E MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG JC 10 A 60 V 35 V 140 W @ TC...982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1...
Description 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator
NPN SILICON RF POWER TRANSISTOR

File Size 15.73K  /  1 Page

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    ASI10603 HF15-28S

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. ASI10603 HF15-28S
OCR Text HF15-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF15-28S is Designed for PACKAGE STYLE .380 4L STUD .112x45 A FEAT...982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1...
Description 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR

File Size 16.41K  /  1 Page

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    D1028UK D1028

Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. D1028UK D1028
OCR Text H D 3 P (2 pls) A 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W - 28V - 175MHz PUSH-PULL FEATURES * SIMPLIFIED A...982 0.982 ang -161.3 -165.9 -168.2 -169.2 -170.2 -171.2 -171.4 -172.4 -173.0 -173.2 -173.6 -174.1 -1...
Description Gold Metallised Multi-Purpose Silicon DMOS RF FET(300W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应300W-28V-175MHz,推挽)
METAL GATE RF SILICON FET

File Size 125.76K  /  7 Page

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    M-982-02 M-982-02P M-982-02S M-982-02T

Clare Inc.
CLARE[Clare, Inc.]
Clare Inc
Part No. M-982-02 M-982-02P M-982-02S M-982-02T
OCR Text ...olerances (mm) Min A A1 b D E e H L 10.00 .40 2.35 .10 .33 12.60 7.4 1.27 BSC 10.65 1.27 Max 2.65 .30 .51 13.00 7.6 SAE approximation(inches) Min Max .0926 .0040 .013 .4961 .2914 .394 .016 .1043 .0118 .020 .5118 .2992 .419 .050 .050 B...
Description Precise Call Progress Tone Detector TELECOM, TONE DECODER CIRCUIT, PDSO20

File Size 198.06K  /  7 Page

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    PTF10138

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTF10138
OCR Text ...indicated. Symbol Gps P-1dB h Y Min 11.5 60 48 -- Typ 12.5 -- 55 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF...982 0.985 0.981 0.979 0.986 0.984 0.986 0.992 0.990 0.983 0.984 0.993 0.991 0.986 0.982 0.990 0.991 ...
Description 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

File Size 105.39K  /  6 Page

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    PTF10139

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10139
OCR Text ...indicated. Symbol Gps P-1dB h Y Min 11.5 60 50 -- Typ 12.5 -- 55 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF...982 0.985 0.981 0.979 0.986 0.984 0.986 0.992 0.990 0.983 0.984 0.993 0.991 0.986 0.982 0.990 0.991 ...
Description 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦,860-960兆赫GOLDMOS场效应晶体管

File Size 114.14K  /  6 Page

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    ASI10516

Advanced Semiconductor
Part No. ASI10516
OCR Text H J K P 4x .062 x 45 2xB A .040 x 45 C E F FEATURES: I * Input Matching Network * * OmnigoldTM Metalization System L N M DIM...982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1...
Description NPN SILICON RF POWER TRANSISTOR

File Size 16.70K  /  1 Page

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